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公开(公告)号：US20220017818A1
公开(公告)日：2022-01-20
申请号：US17490552
申请日：2021-09-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yuho WON , Nayoun WON , Sungwoo HWANG , Eun Joo JANG , Soo Kyung KWON , Yong Wook KIM , Jihyun MIN , Garam PARK , Shang Hyeun PARK , Hyo Sook JANG , Shin Ae JUN , Yong Seok HAN
IPC: C09K11/08 , C08L57/10 , G02F1/13357 , H01L51/50 , H01L27/32 , C09K11/02 , C09K11/56 , C09K11/70 , C09K11/88 , H05B33/14
Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.
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公开(公告)号：US20210167228A1
公开(公告)日：2021-06-03
申请号：US17171198
申请日：2021-02-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Shin Ae JUN , Eun Joo JANG , Soo Kyung KWON , Taek Hoon KIM , Won Joo LEE
IPC: H01L31/0296 , H01L31/0304 , H01L31/0352
Abstract: A nanocrystal including a core including a Group III element and a Group V element, and a monolayer shell on the surface of the core, the shell including a compound of the formula ZnSexS(1-x), wherein 0≤x≤1, and wherein an average mole ratio of Se:S in the monolayer shell ranges from about 2:1 to about 20:1.
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13.发明申请公开(公告)号：US20210115332A1
公开(公告)日：2021-04-22
申请号：US17072335
申请日：2020-10-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seon-Yeong KIM , Soo Kyung KWON , Yong Wook KIM , Ji-Yeong KIM , Jihyun MIN , Sungwoo HWANG , Eun Joo JANG
Abstract: A core-shell quantum dot including a core including a first semiconductor nanocrystal, the first semiconductor nanocrystal including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc and selenium, sulfur, or a combination thereof and a production thereof are disclosed, wherein the core-shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein the core-shell quantum dot(s) includes chlorine, wherein in the core-shell quantum dot, a mole ratio of chlorine with respect to tellurium is greater than or equal to about 0.01:1 and wherein a quantum efficiency of the core-shell quantum dot is greater than or equal to about 10%.
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公开(公告)号：US20200332186A1
公开(公告)日：2020-10-22
申请号：US16851509
申请日：2020-04-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ji-Yeong KIM , Soo Kyung KWON , Seon-Yeong KIM , Yong Wook KIM , Eun Joo JANG
Abstract: A core-shell quantum dot comprising zinc, a core comprising a first semiconductor nanocrystal material; and a semiconductor nanocrystal shell disposed on the core, wherein the core-shell quantum dot does not comprise cadmium, and does comprise zinc, tellurium, selenium, and aluminum.
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15.发明申请公开(公告)号：US20250051640A1
公开(公告)日：2025-02-13
申请号：US18797872
申请日：2024-08-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Soo Kyung KWON , Seungrim YANG , A Ra JO , Seon-Yeong KIM , Nayoun WON , Jun Ho LEE , Mi Hye LIM
Abstract: A semiconductor nanoparticle, a method of manufacturing the semiconductor nanoparticle, and an electronic device including the nanoparticle are provided. The semiconductor nanoparticle includes silver, indium, gallium, and sulfur, wherein the semiconductor nanoparticle is configured to emit a green light, wherein the semiconductor nanoparticle has a relative mole value of zinc as defined by Equation 1 that is greater than or equal to about 0.25 and less than or equal to about 0.9: Relative mole value of zinc = [ Zn ] / ( [ Ag ] + [ In ] + [ Ga ] + [ Zn ] ) Equation 1 wherein, in Equation 1, [Ag], [In], [Ga], and [Zn] are molar amounts of the silver, the indium, the gallium, and the zinc in the semiconductor nanoparticle, respectively, and wherein a mole ratio of gallium to indium is greater than about 2.5:1 and less than about 5.6:1.
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Patent Agency Ranking
公开(公告)号：US20240218248A1
公开(公告)日：2024-07-04
申请号：US18409958
申请日：2024-01-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sungwoo HWANG , Yong Wook KIM , Soo Kyung KWON , Seon-Yeong KIM , Ji-Yeong KIM
CPC classification number: C09K11/883 , C01G9/006 , C09K11/565 , C09K11/567 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C01P2004/64 , C01P2004/84 , C01P2006/60
Abstract: A cadmium free quantum dot including a core that includes a first semiconductor nanocrystal including zinc, tellurium, and selenium, and a semiconductor nanocrystal shell that is disposed on the core and includes a zinc chalcogenide, wherein the quantum dot further includes magnesium and the mole ratio of Te:Se is greater than or equal to about 0.1:1 in the quantum dot; a production method thereof; and an electronic device including the same.
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17.发明公开公开(公告)号：US20230287269A1
公开(公告)日：2023-09-14
申请号：US18318053
申请日：2023-05-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seon-Yeong KIM , Soo Kyung KWON , Yong Wook KIM , Ji-Yeong KIM , Jihyun MIN , Sungwoo HWANG , Eun Joo JANG
CPC classification number: C09K11/883 , C09K11/54 , C09K11/565 , C09K11/06 , C01G9/006 , C01G9/08 , G02F1/133621 , H10K59/38 , G02F2202/36 , C01P2006/60 , C01P2004/90 , C01P2004/64 , G02B6/005
Abstract: A core-shell quantum dot including a core including a first semiconductor nanocrystal, the first semiconductor nanocrystal including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc and selenium, sulfur, or a combination thereof and a production thereof are disclosed, wherein the core-shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein the core-shell quantum dot(s) includes chlorine, wherein in the core-shell quantum dot, a mole ratio of chlorine with respect to tellurium is greater than or equal to about 0.01:1 and wherein a quantum efficiency of the core-shell quantum dot is greater than or equal to about 10%.
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公开(公告)号：US20230183567A1
公开(公告)日：2023-06-15
申请号：US18105911
申请日：2023-02-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ji-Yeong KIM , Soo Kyung KWON , Seon-Yeong KIM , Yong Wook KIM , Eun Joo JANG
CPC classification number: C09K11/54 , C09K11/02 , C09K11/57 , C09K11/58 , C09K11/64 , C09K11/88 , B82Y20/00
Abstract: A core-shell quantum dot comprising zinc, a core comprising a first semiconductor nanocrystal material; and a semiconductor nanocrystal shell disposed on the core, wherein the core-shell quantum dot does not comprise cadmium, and does comprise zinc, tellurium, selenium, and aluminum.
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19.发明申请公开(公告)号：US20200332191A1
公开(公告)日：2020-10-22
申请号：US16851539
申请日：2020-04-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Soo Kyung KWON , Seon-Yeong KIM , Yong Wook KIM , Ji-Yeong KIM , Eun Joo JANG
Abstract: A quantum dot comprising zinc, tellurium, and selenium and not comprising cadmium, wherein a maximum luminescent peak of the quantum dot is present in a wavelength range of greater than about 470 nanometers (nm) and a quantum efficiency of the quantum dot is greater than or equal to about 10%, and wherein the quantum dot comprises a core comprising a first semiconductor nanocrystal and a semiconductor nanocrystal shell disposed on the core.
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20.发明申请公开(公告)号：US20200332190A1
公开(公告)日：2020-10-22
申请号：US16851520
申请日：2020-04-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yong Wook KIM , Eun Joo JANG , Hyo Sook JANG , Soo Kyung KWON , Seon-Yeong KIM , Ji-Yeong KIM
IPC: C09K11/88 , F21V8/00 , G02F1/13357 , H01L27/32 , C09K11/02
Abstract: A cadmium free quantum dot includes zinc, tellurium, and selenium, and lithium. A full width at half maximum of a maximum luminescent peak of the cadmium free quantum dot is less than or equal to about 50 nanometers and the cadmium free quantum dot has a quantum efficiency of greater than 1%.
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