公开(公告)号：US20230157167A1

公开(公告)日：2023-05-18

申请号：US18150888

申请日：2023-01-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-Hwan HONG ,  Sung Jun PARK ,  Kyung Bae PARK ,  Sung Young YUN ,  Chul Joon HEO

IPC: H10K85/60 ,  H10K85/40

CPC classification number: H10K85/6572 ,  H10K85/40 ,  H10K85/615 ,  H10K85/626 ,  H10K85/654 ,  H10K85/6574 ,  H10K30/30

Abstract: A photoelectric device includes a first electrode, a second electrode, a photoelectric conversion layer between the first electrode and the second electrode, and a charge transport layer between the first electrode and the photoelectric conversion layer. The photoelectric conversion layer is configured to absorb light in a wavelength spectrum and converting the absorbed light into an electrical signal. The charge transport layer includes a first charge transport material and a second charge transport material which collectively define a heterojunction.

公开(公告)号：US20210355380A1

公开(公告)日：2021-11-18

申请号：US17238538

申请日：2021-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Jun PARK ,  Junghwa KIM ,  Tae Gon KIM ,  Taekhoon KIM ,  Young Mo SUNG ,  Nayoun WON ,  Dongjin YUN ,  Mi Hye LIM ,  Shin Ae JUN ,  Hyeonsu HEO

IPC: C09K11/56

Abstract: A quantum dot including a semiconductor nanocrystal core including Group III-V compound, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, and a composite/electronic device. The quantum dot does not include cadmium and the first semiconductor nanocrystal shell includes a polyvalent metal dopant at an interface with the second semiconductor nanocrystal shell.

公开(公告)号：US20210135126A1

公开(公告)日：2021-05-06

申请号：US17070502

申请日：2020-10-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daiki MINAMI ,  Sung Young YUN ,  Kyung Bae PARK ,  Sung Jun PARK ,  Chul Joon HEO

IPC: H01L51/00 ,  H01L51/42 ,  H01L51/44

Abstract: Disclosed are a photoelectric conversion device, and a sensor and an electronic device including the same. The photoelectric conversion device may include a first electrode and a second electrode and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer includes a first material and a second material, which form a pn junction, and a third material that is different from the first material and the second material. The third material is configured to modify a distribution of energy levels of the first material or the second material.

公开(公告)号：US20210135123A1

公开(公告)日：2021-05-06

申请号：US16887405

申请日：2020-05-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-Hwan HONG ,  Sung Jun PARK ,  Kyung Bae PARK ,  Sung Young YUN ,  Chul Joon HEO

IPC: H01L51/00

Abstract: A photoelectric device includes a first electrode, a second electrode, a photoelectric conversion layer between the first electrode and the second electrode, and a charge transport layer between the first electrode and the photoelectric conversion layer. The photoelectric conversion layer is configured to absorb light in a wavelength spectrum and converting the absorbed light into an electrical signal. The charge transport layer includes a first charge transport material and a second charge transport material which collectively define a heterojunction.

公开(公告)号：US20210066628A1

公开(公告)日：2021-03-04

申请号：US16984510

申请日：2020-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Bae PARK ,  Naotoshi SUGANUMA ,  Chul Joon HEO ,  Sung Jun PARK ,  Sung Young YUN

IPC: H01L51/44

Abstract: A device includes a first electrode and a second electrode, an active layer between the first electrode and the second electrode and a plurality of auxiliary layers between the first electrode and the active layer. The auxiliary layers include first and second auxiliary layers, the first auxiliary layer proximate to the active layer, the second auxiliary layer proximate to the second electrode. An energy level of the active layer, an energy level of the first auxiliary layer, an energy level of the second auxiliary layer, and a work function of the first electrode become deeper sequentially or shallower sequentially.

公开(公告)号：US20200373356A1

公开(公告)日：2020-11-26

申请号：US16596265

申请日：2019-10-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Jun PARK ,  Kyng Bae Park ,  Sung Young Yun ,  Gae Hwang Lee ,  Seon-Jeong Lim ,  Yong Wan Jin

IPC: H01L27/30 ,  H01L51/42 ,  H04B10/114 ,  H04B10/66 ,  H04B10/50

Abstract: An optical wireless communication system includes an optical wireless transmitter configured to emit a discrete-time signal of first light, second light, and third light having different wavelength spectra; and a light-receiving sensor including an optical wireless receiver including first, second, and third photoelectric conversion devices configured to convert discrete-time signals of the first, second, and third light beams into first, second, and third photoelectric conversion signals, respectively, wherein the second photoelectric conversion device at least partially overlaps the first photoelectric conversion device, and the third photoelectric conversion device at least partially overlaps at least one photoelectric conversion device of the first photoelectric conversion device or the second photoelectric conversion device, and at least one photoelectric conversion device of the first photoelectric conversion device, the second photoelectric conversion device, or the third photoelectric conversion device includes an organic light absorbing material, a quantum dot, or a combination thereof.

公开(公告)号：US20180040768A1

公开(公告)日：2018-02-08

申请号：US15438876

申请日：2017-02-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shiyoung LEE ,  Sun Hyun OH ,  Sung Jun PARK ,  Young Sub SHIN ,  Kyoyoung AHN ,  Chi-yoon LEE

IPC: H01L33/22 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/22 ,  H01L33/0062 ,  H01L33/06 ,  H01L33/20 ,  H01L33/32

Abstract: A semiconductor light emitting device and a method of manufacturing a semiconductor light emitting device, the device including a substrate; a first conductive semiconductor layer on one surface of the substrate; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; and a plurality of protrusions on the second conductive semiconductor layer, the plurality of protrusions including an undoped semiconductor material, wherein an uneven complex surface structure including an unevenness that is a smaller size than a protrusion is formed in the second conductive semiconductor layer and is provided between the plurality of protrusions.