公开(公告)号：US20170133370A1

公开(公告)日：2017-05-11

申请号：US15409033

申请日：2017-01-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Gun YOU ,  Hyung-Jong LEE ,  Sung-Min KIM ,  Chong-Kwang CHANG

IPC: H01L27/088 ,  H01L29/06 ,  H01L23/532 ,  H01L23/485 ,  H01L23/528

CPC classification number: H01L27/0886 ,  H01L23/485 ,  H01L23/528 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/0649

Abstract: A semiconductor device, including first and second fin patterns separated by a first trench; a gate electrode intersecting the first and second fin patterns; and a contact on at least one side of the gate electrode, the contact contacting the first fin pattern, the contact having a bottom surface that does not contact the second fin pattern, a height from a bottom of the first trench to a topmost end of the first fin pattern in a region in which the contact intersects the first fin pattern being a first height, and a height from the bottom of the first trench to a topmost end of the second fin pattern in a region in which an extension line of the contact extending along a direction in which the gate electrode extends intersects the second fin pattern being a second height, the first height being smaller than the second height.

公开(公告)号：US20170047057A1

公开(公告)日：2017-02-16

申请号：US15233506

申请日：2016-08-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min KIM ,  Min-Hee LEE ,  Yun-Jae LEE

IPC: G10H1/34 ,  G10H1/18 ,  G10H7/00

CPC classification number: G10H1/34 ,  G10H1/183 ,  G10H7/00 ,  G10H2220/106 ,  G10H2220/201 ,  G10H2220/241 ,  G10H2230/015

Abstract: An electronic device and a method for reproducing a sound in the electronic device are provided. The electronic device includes a touchscreen displaying a keyboard having a plurality of keys and a plurality of sound source buttons corresponding respectively to a plurality of different sound sources, a processor connected electrically to the touchscreen, and a memory connected electrically to the processor, wherein the memory stores instructions that are executed to cause the processor to perform control such that when an input to at least one key among the plurality of keys is received, the sound source corresponding to at least one sound source button selected among the plurality of sound source buttons is reproduced as a sound corresponding to the received input.

Abstract translation: 提供一种用于在电子设备中再现声音的电子设备和方法。 电子设备包括触摸屏，其显示具有多个键的键盘和分别对应于多个不同声源的多个声源按钮，与触摸屏电连接的处理器以及与该处理器电连接的存储器，其中， 存储器存储执行以使处理器执行控制的指令，使得当接收到对多个键中的至少一个键的输入时，对应于在多个声源按钮中选择的至少一个声源按钮的声源 被再现为对应于接收到的输入的声音。

公开(公告)号：US20170018464A1

公开(公告)日：2017-01-19

申请号：US15211200

申请日：2016-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min KIM ,  Ji-Su KANG ,  Byung-Chan RYU ,  Jae-Hyun PARK ,  Yu-Ri LEE ,  Dong-Ho CHA

IPC: H01L21/8238 ,  H01L29/08 ,  H01L29/161 ,  H01L23/532 ,  H01L29/165 ,  H01L27/092 ,  H01L23/535 ,  H01L29/78 ,  H01L29/16

CPC classification number: H01L21/823871 ,  H01L21/76897 ,  H01L21/823814 ,  H01L21/823821 ,  H01L23/485 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/665 ,  H01L29/7848 ,  H01L2029/7858

Abstract: A semiconductor device includes a first fin-type pattern and a second fin-type pattern which protrude upwardly from an upper surface of a field insulating film and extend in a first direction. A gate structure intersects the first fin-type pattern and the second fin-type pattern. A first epitaxial layer is on the first fin-type pattern on at least one side of the gate structure, and a second epitaxial layer is on the second fin-type pattern on at least one side of the gate structure. A metal contact covers outer circumferential surfaces of the first epitaxial layer and the second epitaxial layer. The first epitaxial layer contacts the second epitaxial layer.

Abstract translation: 半导体器件包括从场绝缘膜的上表面向上突出并沿第一方向延伸的第一鳍式图案和第二鳍片型图案。 栅极结构与第一鳍状图案和第二鳍片图案相交。 第一外延层位于栅极结构的至少一侧的第一鳍式图案上，第二外延层位于栅极结构的至少一侧上的第二鳍型图案上。 金属接触覆盖第一外延层和第二外延层的外圆周表面。 第一外延层接触第二外延层。

公开(公告)号：US20160079125A1

公开(公告)日：2016-03-17

申请号：US14812137

申请日：2015-07-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Min KIM ,  Cheol KIM ,  Dong-Ho CHA

IPC: H01L21/8234 ,  H01L29/66 ,  H01L21/306 ,  H01L21/311

CPC classification number: H01L21/823431 ,  H01L21/823437 ,  H01L21/823481

Abstract: In a method of manufacturing a semiconductor device, a substrate is etched to form active fins spaced apart from one another in a first direction, and each active fin extends in the first direction. An isolation pattern is formed on the substrate to partially fill a space between the active fins. A mold pattern is formed on the isolation pattern, the mold pattern covering at least a portion of each of the active fins and including an opening exposing a portion of the isolation pattern between the active fins in the first direction. An insulation pattern is formed to fill the opening. The mold pattern is removed to expose the active fins. A gate structure and a dummy structure are formed on the exposed active fins and the insulation pattern, respectively, the gate structure and the dummy structure extending in a second direction substantially perpendicular to the first direction.

Abstract translation: 在制造半导体器件的方法中，蚀刻衬底以形成在第一方向上彼此间隔开的有效散热片，并且每个活动鳍片沿第一方向延伸。 在衬底上形成隔离图案，以部分填充活性鳍片之间的空间。 在隔离图案上形成模具图案，模具图案覆盖每个活动翅片的至少一部分，并且包括在第一方向上暴露活动翅片之间的隔离图案的一部分的开口。 形成绝缘图案以填充开口。 去除模具图案以暴露活性散热片。 分别在暴露的活性鳍片和绝缘图案上形成栅极结构和虚拟结构，栅极结构和虚拟结构在基本上垂直于第一方向的第二方向上延伸。