VARIABLE RESISTANCE MEMORY DEVICE
    12.
    发明申请

    公开(公告)号:US20180158872A1

    公开(公告)日:2018-06-07

    申请号:US15700154

    申请日:2017-09-10

    CPC classification number: H01L27/2463 H01L45/06 H01L45/1253

    Abstract: A variable resistance memory device may include a word line extending in a first direction, a bit line extending in a second direction crossing the first direction, a phase-changeable pattern provided between the word line and the bit line, a bottom electrode provided between the phase-changeable pattern and the word line, and a spacer provided on a side surface of the bottom electrode and between the phase-changeable pattern and the word line. The bottom electrode may include a first portion and a second portion, and the second portion is provided between the first portion and the spacer. The first and second portions of the bottom electrodes may have different lengths from each other in the second direction.

    WATER TREATMENT APPARATUS AND METHOD FOR CONTROLLING THE SAME

    公开(公告)号:US20250011197A1

    公开(公告)日:2025-01-09

    申请号:US18653706

    申请日:2024-05-02

    Abstract: Provided is a water treatment apparatus, including a first channel including a first current collector and an anion exchange membrane, a second channel including a second current collector and a cation exchange membrane, a third channel including the anion exchange membrane and the cation exchange membrane, and at least one processor configured to during a deionization operation, apply a negative voltage to the second current collector to move cations contained in water in the third channel to the second channel, during a regeneration operation, apply a first positive voltage to the second current collector to move cations in the second channel to the third channel, and during a descaling operation, apply a second positive voltage greater than the first positive voltage to the second current collector to electrolyze water in the second channel.

Patent Agency Ranking