公开(公告)号：US20140054599A1

公开(公告)日：2014-02-27

申请号：US13937729

申请日：2013-07-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun-hee CHOI ,  Byoung-lyong CHOI ,  Tae-ho KIM

IPC: H01L31/0304 ,  H01L33/00 ,  H01L31/18 ,  H01L33/32

CPC classification number: H01L31/03044 ,  B82Y20/00 ,  H01L25/0753 ,  H01L31/035218 ,  H01L31/035236 ,  H01L31/03529 ,  H01L31/047 ,  H01L31/1848 ,  H01L31/1856 ,  H01L31/1892 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/24 ,  H01L33/32 ,  H01L33/56 ,  H01L2924/0002 ,  Y02E10/544 ,  Y02P70/521 ,  H01L2924/00

Abstract: A flexible semiconductor device and a method of manufacturing the flexible semiconductor device are provided. The flexible semiconductor device may include at least one vertical semiconductor element that is at least partly embedded in a flexible material layer. The flexible semiconductor device may further include a first electrode formed on a first surface of the flexible material layer and a second electrode formed on a second surface of the flexible material layer. A method of manufacturing a flexible semiconductor device may include separating a flexible material layer, in which the at least one vertical semiconductor element is embedded, from a substrate by weakening or degrading an adhesive force between an underlayer and a buffer layer by using a difference in coefficients of thermal expansion of the underlayer and the buffer layer.

Abstract translation: 提供了柔性半导体器件和制造柔性半导体器件的方法。 柔性半导体器件可以包括至少部分地嵌入柔性材料层中的至少一个垂直半导体元件。 柔性半导体器件还可以包括形成在柔性材料层的第一表面上的第一电极和形成在柔性材料层的第二表面上的第二电极。 制造柔性半导体器件的方法可以包括通过使用下层和缓冲层之间的差异来弱化或降低底层和缓冲层之间的粘合力来将其中嵌入至少一个垂直半导体元件的柔性材料层从衬底分离 底层和缓冲层的热膨胀系数。