公开(公告)号：US20190123237A1

公开(公告)日：2019-04-25

申请号：US15906539

申请日：2018-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tan SAKONG ,  Byoung-kyun Kim ,  Jin-young Lim ,  Jae-sung Hyun

IPC: H01L33/02 ,  H01L33/32 ,  H01L33/12 ,  H01L33/06 ,  H01L33/00

Abstract: A light-emitting device includes a light-emitting structure including a first-conductivity-type nitride semiconductor layer on a substrate, an active layer on the first-conductivity-type nitride semiconductor layer, and a second-conductivity-type nitride semiconductor layer on the active layer, and a buffer layer between the substrate and the light-emitting structure. The buffer layer includes a plurality of voids. The plurality of voids extend vertically into the buffer layer from a surface of the buffer layer. The surface of the buffer layer is proximate to the light-emitting structure. The plurality of voids have different horizontal sectional areas.

公开(公告)号：US20150207034A1

公开(公告)日：2015-07-23

申请号：US14577826

申请日：2014-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tan SAKONG ,  Byoung Kyun KIM ,  Tong Ik SHIN ,  Jin Young LIM ,  Young Sun KIM ,  Suk Ho YOON

IPC: H01L33/24 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06 ,  H01L33/02

CPC classification number: H01L33/22 ,  H01L33/10

Abstract: A semiconductor light emitting device may include a base semiconductor layer formed on a substrate and having defect regions therein; cavities disposed in regions corresponding to the defect regions on the base semiconductor layer; a capping layer disposed to cover at least one region of the base semiconductor layer and the cavities; and a light emitting structure disposed on the capping layer and including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. Lattice defects formed in the light emitting structure may be reduced to enhance luminous efficiency.

Abstract translation: 半导体发光器件可以包括形成在衬底上并在其中具有缺陷区域的基底半导体层; 设置在与所述基底半导体层上的所述缺陷区域对应的区域中的空腔; 封盖层，其设置成覆盖所述基底半导体层和所述空腔的至少一个区域; 以及发光结构，其设置在所述覆盖层上并且包括第一导电型半导体层，有源层和第二导电型半导体层。 可以减少在发光结构中形成的晶格缺陷，以提高发光效率。