公开(公告)号：US20140235005A1

公开(公告)日：2014-08-21

申请号：US14106783

申请日：2013-12-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Hyun LEE ,  Ki Sung KIM ,  Bum Joon KIM ,  Tan Sakong ,  Suk Ho YOON ,  Jae Deok JEONG

IPC: H01L33/00 ,  H01L21/02

CPC classification number: H01L21/0254 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/0066

Abstract: A method of producing a p-type nitride semiconductor includes growing a first nitride semiconductor layer doped with a first concentration of a p-type impurity. The first nitride semiconductor layer is annealed to activate the p-type impurity. A second nitride semiconductor layer doped with a second concentration of a p-type impurity is grown on the first nitride semiconductor layer. The second concentration is higher than the first concentration.

Abstract translation: 制造p型氮化物半导体的方法包括生长掺杂有第一浓度的p型杂质的第一氮化物半导体层。 对第一氮化物半导体层进行退火以激活p型杂质。 在第一氮化物半导体层上生长掺杂有第二浓度的p型杂质的第二氮化物半导体层。 第二浓度高于第一浓度。