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    ELECTRONIC APPARATUS AND CONTROL METHOD THEREOF
    11.
    发明申请
    ELECTRONIC APPARATUS AND CONTROL METHOD THEREOF 审中-公开

    公开(公告)号：US20190311302A1

    公开(公告)日：2019-10-10

    申请号：US16153135

    申请日：2018-10-05

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyoung-hoon KIM ,  Young-hwan PARK ,  Dong-soo LEE ,  Dae-hyun KIM ,  Han-su CHO ,  Hyun-jung KIM

    IPC: G06N99/00

    Abstract: An electronic apparatus is provided. The electronic apparatus includes a first memory configured to store a first artificial intelligence (AI) model including a plurality of first elements and a processor configured to include a second memory. The second memory is configured to store a second AI model including a plurality of second elements. The processor is configured to acquire output data from input data based on the second AI model. The first AI model is trained through an AI algorithm. Each of the plurality of second elements includes at least one higher bit of a plurality of bits included in a respective one of the plurality of first elements.

    PROCESSOR AND CONTROL METHODS THEREOF
    12.
    发明申请
    PROCESSOR AND CONTROL METHODS THEREOF 审中-公开

    公开(公告)号：US20190129885A1

    公开(公告)日：2019-05-02

    申请号：US16143922

    申请日：2018-09-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyoung-hoon KIM ,  Young-hwan PARK ,  Dong-kwan SUH ,  Keshava PRASAD NAGARAJA ,  Suk-jin KIM ,  Han-su CHO ,  Hyun-jung KIM

    IPC: G06F15/80 ,  G06F9/30 ,  G06F7/544 ,  G06F15/18

    Abstract: A processor for performing deep learning is provided herein. The processor includes a processing element unit including a plurality of processing elements arranged in a matrix form including a first row of processing elements and a second row of processing elements. The processing elements are fed with filter data by a first data input unit which is connected to the first row processing elements. A second data input unit feeds target data to the processing elements. A shifter composed of registers feeds instructions to the processing elements. A controller in the processor controls the processing elements, the first data input unit and second data input unit to process the filter data and target data, thus providing sum of products (convolution) functionality.

    METHOD AND APPARATUS FOR PROCESSING IMAGE ENHANCEMENT ALGORITHM
    14.
    发明申请
    METHOD AND APPARATUS FOR PROCESSING IMAGE ENHANCEMENT ALGORITHM 审中-公开

    公开(公告)号：US20170243321A1

    公开(公告)日：2017-08-24

    申请号：US15519318

    申请日：2015-10-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Won-jae LEE ,  Min-soo KIM ,  Young-hwan PARK

    IPC: G06T1/20

    Abstract: Disclosed are an image enhancement algorithm processing method and apparatus. The image enhancement algorithm processing method includes setting a plurality of different control registers, indexing and storing the set plurality of control registers, calling a first control register corresponding to a first index among the stored plurality of control registers by using the first index, and commanding a hardware accelerator to perform a first function defined by the called first control register.

    HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    16.
    发明申请
    HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    高电子移动性晶体管及其制造方法

    公开(公告)号：US20140021510A1

    公开(公告)日：2014-01-23

    申请号：US13752821

    申请日：2013-01-29

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Woo-chul JEON ,  Ki-yeol PARK ,  Young-hwan PARK ,  Jai-kwang SHIN ,  Jae-joon OH ,  Hyuk-soon CHOI ,  Jong-bong HA

    IPC: H01L29/778 ,  H01L29/66

    CPC classification number: H01L29/778 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7786

    Abstract: A higher electron mobility transistor (HEMT) and a method of manufacturing the same are disclosed. According to example embodiments, the HEMT may include a channel supply layer on a channel layer, a source electrode and a drain electrode that are on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a source pad and a drain pad. The source pad and a drain pad electrically contact the source electrode and the drain electrode, respectively. At least a portion of at least one of the source pad and the drain pad extends into a corresponding one of the source electrode and drain electrode that the at least one of the source pad and the drain pad is in electrical contact therewith.

    Abstract translation: 公开了一种较高电子迁移率晶体管（HEMT）及其制造方法。 根据示例实施例，HEMT可以包括位于沟道层和沟道供应层中的至少一个上的沟道层，源电极和漏电极上的沟道供应层，源极和源极之间的栅电极 漏电极，以及源极焊盘和漏极焊盘。 源极焊盘和漏极焊盘分别与源电极和漏电极电接触。 源极焊盘和漏极焊盘中的至少一个的至少一部分延伸到源电极和漏电极中的至少一个源极焊盘和漏极焊盘与其电接触的相应的一个。

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