公开(公告)号：US20240098974A1

公开(公告)日：2024-03-21

申请号：US18501576

申请日：2023-11-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeonil LEE ,  Youngjun KIM ,  Jinbum KIM

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H10B12/0335 ,  H10B12/37 ,  H10B12/482

Abstract: A semiconductor device including an active pattern; a gate structure connected to the active pattern; a bit line structure connected to the active pattern; a buried contact connected to the active pattern; a contact pattern covering the buried contact; a landing pad connected to the contact pattern; and a capacitor structure connected to the landing pad, wherein the buried contact includes a first growth portion and a second growth portion spaced apart from each other, and the landing pad includes an interposition portion between the first growth portion and the second growth portion.

公开(公告)号：US20230420826A1

公开(公告)日：2023-12-28

申请号：US18244039

申请日：2023-09-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngjung KIM ,  Jonghyuck LEE ,  Youngjun KIM ,  Jongsuk KIM ,  Kyungbin KIM ,  Kwangseo KIM ,  Donghwan KIM

IPC: H01Q1/24 ,  H01Q21/08 ,  H01Q9/04

CPC classification number: H01Q1/243 ,  H01Q21/08 ,  H01Q9/0407

Abstract: An electronic device according to various embodiments may comprise: a housing; an antenna structure comprising a substrate, which comprises a first substrate surface facing a first direction and a second substrate surface facing a second direction opposite from the first substrate surface, and at least one antenna element disposed on the substrate so as to form a beam pattern in the first direction; a first support part disposed so as to at least partially correspond to the second substrate surface; a conductive bracket comprising at least one conductive extension part disposed higher than the second substrate surface with respect to the first support part; and a wireless communication circuit configured to transmit and/or receive a wireless signal in a designated frequency band by means of the at least one antenna element.

公开(公告)号：US20230290681A1

公开(公告)日：2023-09-14

申请号：US17957473

申请日：2022-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taekyung YOON ,  Youngjun KIM ,  Hunyoung BARK ,  Eun-Ok LEE ,  Jaejin LEE ,  Dongju CHANG

IPC: H01L21/768 ,  H01L21/67 ,  H01L21/3213

CPC classification number: H01L21/76877 ,  H01L21/76829 ,  H01L21/67103 ,  H01L21/3213 ,  H01L21/76856

Abstract: Provided is a method of fabricating a semiconductor device including forming a device isolation layer defining active regions on a substrate and forming gate lines intersecting the active regions and buried in the substrate. The forming of the gate lines includes forming a trench crossing the active regions in the substrate, forming a conductive layer filling the trench, and performing a heat treatment process on the conductive layer. The conductive layer includes a nitride of a first metal. Nitrogen atoms in the conductive layer are diffused toward an outer surface and a lower surface of the conductive layer by the heat treatment process.