公开(公告)号：US20230051597A1

公开(公告)日：2023-02-16

申请号：US17579919

申请日：2022-01-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeonil LEE ,  Youngjun KIM ,  Jinbum KIM

IPC: H01L27/108

Abstract: A semiconductor device including an active pattern; a gate structure connected to the active pattern; a bit line structure connected to the active pattern; a buried contact connected to the active pattern; a contact pattern covering the buried contact; a landing pad connected to the contact pattern; and a capacitor structure connected to the landing pad, wherein the buried contact includes a first growth portion and a second growth portion spaced apart from each other, and the landing pad includes an interposition portion between the first growth portion and the second growth portion.

公开(公告)号：US20240315009A1

公开(公告)日：2024-09-19

申请号：US18386916

申请日：2023-11-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihoon KIM ,  Dohyung KIM ,  Youngjun KIM ,  Taekjung KIM ,  Yeonju OH ,  Jaejin LEE ,  Dongju CHANG ,  Seohyeong JANG

IPC: H10B12/00

CPC classification number: H10B12/34 ,  H10B12/053 ,  H10B12/315

Abstract: A semiconductor memory device is provided. The semiconductor memory device includes: an active pattern provided on a substrate and enclosed by a device isolation pattern; and a word line crossing the active pattern and the device isolation pattern in a first direction parallel to a bottom surface of the substrate, and including a first gate electrode and a second gate electrode, which are adjacent to each other in the first direction. A second work function of the second gate electrode is greater than a first work function of the first gate electrode.

公开(公告)号：US20250089236A1

公开(公告)日：2025-03-13

申请号：US18954927

申请日：2024-11-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonil LEE ,  Youngjun KIM ,  Jinbum KIM

IPC: H10B12/00

Abstract: A semiconductor device including an active pattern; a gate structure connected to the active pattern; a bit line structure connected to the active pattern; a buried contact connected to the active pattern; a contact pattern covering the buried contact; a landing pad connected to the contact pattern; and a capacitor structure connected to the landing pad, wherein the buried contact includes a first growth portion and a second growth portion spaced apart from each other, and the landing pad includes an interposition portion between the first growth portion and the second growth portion.

公开(公告)号：US20240188285A1

公开(公告)日：2024-06-06

申请号：US18509539

申请日：2023-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngjun KIM ,  Hyosub KIM ,  Junhyeok AHN

IPC: H10B12/00

CPC classification number: H10B12/482 ,  H10B12/02 ,  H10B12/315

Abstract: The semiconductor device includes an active pattern; a gate structure in an upper portion of the active pattern; a bit line structure on the active pattern, the bit line structure including a first metal; a first spacer on a sidewall of the bit line structure, the first spacer including an oxide of a second metal that has an ionization energy smaller than that of the first metal; a second spacer on an outer sidewall of the first spacer, the second spacer including an oxide of a third metal; a third spacer on a lower portion of an outer sidewall of the second spacer, the third spacer including a nitride; a fourth spacer on an upper portion of the outer sidewall of the second spacer and the third spacer; a fifth spacer and a sixth spacer sequentially stacked in a horizontal direction from an outer sidewall of the fourth spacer.

公开(公告)号：US20210374624A1

公开(公告)日：2021-12-02

申请号：US17236727

申请日：2021-04-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngjun KIM ,  Doheum PARK ,  Yeongtae SHIN ,  Laura KANG ,  Bokang KIM

IPC: G06Q10/04 ,  G06N3/12 ,  G06Q10/06

Abstract: An electronic apparatus may include an interface; and a processor configured to obtain information related to time-sequentially generated quantities of a plurality of targets via the interface, identify a group comprising at least two targets that have a relation with respect to the time-sequentially generated quantities, identify a target quantity of the identified group satisfying a predetermined prediction criterion based on a plurality of candidate target quantities of the identified group, and output information related to prediction quantities of the plurality of targets included in the identified group based on a proportion between the time-sequentially generated quantities of the plurality of targets.

公开(公告)号：US20210334321A1

公开(公告)日：2021-10-28

申请号：US17284401

申请日：2019-07-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngjun KIM ,  Chanmuk KIM ,  Dohyoung JUNG ,  Kwanghyun KOH

IPC: G06F16/955 ,  G06F16/9535 ,  G06F16/9538 ,  G06F40/284 ,  G06F11/34 ,  G06K9/62

Abstract: The present disclosure provides an electronic device and a control method therefor. An electronic device of the present disclosure may comprise a memory including at least one command, and a processor which is connected to the memory so as to control the electronic device, wherein the processor executes at least one instruction, so as to classify a uniform resource locator (URL) corresponding to at least one website accessed by a user during a preconfigured period into at least one segment, classify URLs according to a plurality of categories, on the basis of the at least one segment and a learned classification model, and determine, among the plurality of categories, a category of a website preferred by the user, on the basis of the user's website access history during the preconfigured period, an access history with respect to the at least one website, and a result of the classification. The electronic device of the present disclosure may use a rule-based model or an artificial intelligence model learned according to at least one of a machine learning, a neural network, or a deep learning algorithm.

公开(公告)号：US20240035159A1

公开(公告)日：2024-02-01

申请号：US18223606

申请日：2023-07-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungrim KIM ,  Youngeun KIM ,  Youngjun KIM ,  Jihoon KIM ,  Taekjung KIM ,  Dongju CHANG

IPC: C23C16/455 ,  C23C16/448

CPC classification number: C23C16/45561 ,  C23C16/448 ,  C23C16/45589

Abstract: A precursor supply system includes a storage tank storing the precursor in a solid state; a transfer pipe connected to the storage tank to transfer the precursor in a solid state; a phase converter connected to the transfer pipe and sublimating the transported solid-state precursor into vapor; a supply pipe connected to the phase converter and transporting a precursor in a vaporous state; and a process chamber disposed adjacently to the phase converter and connected to the supply pipe.

公开(公告)号：US20230216203A1

公开(公告)日：2023-07-06

申请号：US17927837

申请日：2021-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junsig KUM ,  Hyunjin KIM ,  Youngjun KIM ,  Yoongeon KIM ,  Seungho CHOI

IPC: H01Q9/04 ,  H01Q9/40 ,  H01Q1/38 ,  H04B7/0413

CPC classification number: H01Q9/045 ,  H01Q9/40 ,  H01Q1/38 ,  H04B7/0413

Abstract: The present disclosure provides a surface-mountable antenna structure that is applicable to a broadband massive multi-input multi-output (MIMO) unit (MMU) in a wireless communication system. An antenna structure according to an embodiment of the present disclosure comprises: a printed circuit board including a first ground port, a second ground port, and a first feeding port; a first antenna electrically connected to the first ground port; a second antenna electrically connected to the second ground port; and a first feeding plate including a first bending part electromagnetically coupled to the first antenna, a second bending part electromagnetically coupled to the second antenna, and a third bending part electrically connected to the first feeding port.

公开(公告)号：US20210373514A1

公开(公告)日：2021-12-02

申请号：US17317572

申请日：2021-05-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaewook KIM ,  Youngjun KIM ,  Doheum PARK ,  Yeongtae SHIN

IPC: G05B13/04

Abstract: An electronic apparatus and a control method thereof are provided. The electronic apparatus may include an interface; and a processor configured to obtain, via the interface, information related to values, which occur in time series, of a plurality of factors regarding a prediction object, identify, based on the information related to the values of the plurality of factors, at least one factor, from among the plurality of factors, having a time series change of values that corresponds to a time series change of reference values of the prediction object, and output information related to a predicted value of the prediction object based on the time series change of the values of the at least one factor.

公开(公告)号：US20250081585A1

公开(公告)日：2025-03-06

申请号：US18952625

申请日：2024-11-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaejin LEE ,  Youngjun KIM ,  Hunyoung BARK ,  Taekyung YOON ,  Eunok LEE

IPC: H01L29/49 ,  H10B12/00

Abstract: A gate structure includes a first gate electrode including a metal, a gate barrier pattern on the first gate electrode and including a metal nitride, and a second gate electrode on the gate barrier pattern. The gate structure is buried in an upper portion of a substrate. The gate barrier pattern has a flat upper surface and an uneven lower surface.