公开(公告)号：US11960084B2

公开(公告)日：2024-04-16

申请号：US16972084

申请日：2019-06-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngran Kim ,  Soojung Kim ,  Yongsu Kim ,  Cheongsoo Park ,  Hwanseon Lee

IPC: G02B27/01 ,  G02B1/11 ,  G02B3/04 ,  G02B5/10

CPC classification number: G02B27/0172 ,  G02B1/11 ,  G02B3/04 ,  G02B5/10

Abstract: Provided are an optical assembly and an electronic apparatus having the optical assembly.
The optical assembly includes at least one reflective mirror reflecting image light output form a display module, a refractive lens through which image light reflected from the at least one reflective mirror passes, and a reflective lens having a first surface and a second surface and including a transflective coating layer provided on the first surface and reflecting the image light that passed through the refractive lens in a first direction and transmitting real light from a second direction facing the first direction.

公开(公告)号：US20240079566A1

公开(公告)日：2024-03-07

申请号：US18456626

申请日：2023-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sewon Kim ,  Dongsu Ko ,  Yongsu Kim ,  Jusik Kim ,  Gabin Yoon

IPC: H01M4/36 ,  H01M10/0562 ,  H01M10/058

CPC classification number: H01M4/366 ,  H01M4/364 ,  H01M10/0562 ,  H01M10/058 ,  H01M2004/027

Abstract: A negative electrode-solid electrolyte sub-assembly for an all-solid secondary battery, the negative electrode-solid electrolyte sub-assembly including: a negative electrode current collector, a first negative active material layer disposed on the negative electrode current collector, an interlayer disposed on the first negative active material layer and opposite the negative electrode current collector, and a solid electrolyte disposed on the interlayer and opposite the first negative active material layer, wherein the first negative active material layer may include a mixture of a compound of Formula 1 and a compound of Formula 2, a composite of the compound of Formula 1 and the compound of Formula 2, or a combination thereof, the interlayer comprises a third metal material, lithium oxide, or a combination thereof, and the third metal material comprises a third metal oxide, an oxide comprising a third metal and lithium, or a combination thereof,


LixM1y,  Formula 1



M2aNb.  Formula 2

公开(公告)号：US11735637B2

公开(公告)日：2023-08-22

申请号：US17400901

申请日：2021-08-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunae Cho ,  Dongjin Lee ,  Ji Eun Lee ,  Kyoung-Ho Jung ,  Dong Su Ko ,  Yongsu Kim ,  Jiho Yoo ,  Sung Heo ,  Hyun Park ,  Satoru Yamada ,  Moonyoung Jeong ,  Sungjin Kim ,  Gyeongsu Park ,  Han Jin Lim

IPC: H01L29/423 ,  H01L29/49 ,  H01L21/28 ,  H01L29/51

CPC classification number: H01L29/4236 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

公开(公告)号：US11127828B2

公开(公告)日：2021-09-21

申请号：US16432298

申请日：2019-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunae Cho ,  Dongjin Lee ,  Ji Eun Lee ,  Kyoung-Ho Jung ,  Dong Su Ko ,  Yongsu Kim ,  Jiho Yoo ,  Sung Heo ,  Hyun Park ,  Satoru Yamada ,  Moonyoung Jeong ,  Sungjin Kim ,  Gyeongsu Park ,  Han Jin Lim

IPC: H01L29/423 ,  H01L29/49 ,  H01L21/28 ,  H01L29/51

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.