公开(公告)号：US10541035B1

公开(公告)日：2020-01-21

申请号：US16022373

申请日：2018-06-28

Applicant: SanDisk Technologies LLC

Inventor： Ching-Huang Lu ,  Han-Ping Chen ,  Chung-Yao Pai ,  Yingda Dong

IPC: G11C16/04 ,  G11C16/26 ,  G11C11/56 ,  G11C16/34

Abstract: Apparatuses and techniques are provided for accurately reading memory cells by compensating for lateral charge diffusion between adjacent memory cells. A selected memory cell is read with a compensation which is based on classifying the threshold voltages of adjacent memory cells into bins. In one aspect, the compensation is based on the level of the current control gate voltage of the selected word line. In another aspect, the classifying of the threshold voltages of the adjacent memory cells can be a function of temperature. In another aspect, a memory cell can be read with compensation after a previous read operation without compensation results in an uncorrectable error. In another aspect, the classifying uses more bins for a selected edge word line.

公开(公告)号：US20240087650A1

公开(公告)日：2024-03-14

申请号：US17940498

申请日：2022-09-08

Applicant: SanDisk Technologies LLC

Inventor： Han-Ping Chen ,  Guirong Liang

IPC: G11C16/10 ,  G11C16/08 ,  G11C16/34

CPC classification number: G11C16/102 ,  G11C16/08 ,  G11C16/3459

Abstract: A storage device is disclosed herein. The storage device comprises: a non-volatile memory, where the non-volatile memory includes a block of N wordlines partitioned into a plurality of sub-blocks; and control circuitry coupled to the N wordlines. The control circuitry is configured to: determine a program status of an unselected sub-block of the plurality of sub-blocks before performing an operation on a selected sub-block of the plurality of sub-blocks; based on determining that the program status of the unselected sub-block is programmed, perform a precharge operation including applying a first precharge time; and based on determining that the program status of the unselected sub-block is not programmed, perform a precharge operation including applying a second precharge time, wherein the first precharge time is for a longer period than the second precharge time.

公开(公告)号：US20240079062A1

公开(公告)日：2024-03-07

申请号：US17903618

申请日：2022-09-06

Applicant: SanDisk Technologies LLC

Inventor： Jiacen Guo ,  Han-Ping Chen ,  Henry Chin ,  Guirong Liang ,  Xiang Yang

IPC: G11C16/10 ,  G11C11/56 ,  G11C16/34

CPC classification number: G11C16/10 ,  G11C11/5628 ,  G11C11/5671 ,  G11C16/3459

Abstract: The memory device includes at least one memory block with source and drain sides and a plurality of memory cells arranged in a plurality of word lines. The word lines are arranged in a plurality of independently programmable and erasable sub-blocks. Control circuitry is configured to program the memory cells of a selected sub-block and determine a location of the within the at least one memory block and determine a programming condition of at least one unselected sub-block. The control circuitry is also configured to program at least one word line in the selected sub-block in a plurality of program loops that include pre-charging processes. The control circuitry pre-charges a plurality of channels from either the source or drain side based on at least one of the location of the selected sub-block within the memory block and the programming condition of the at least one unselected sub-block.

公开(公告)号：US10964402B1

公开(公告)日：2021-03-30

申请号：US16794614

申请日：2020-02-19

Applicant: SanDisk Technologies LLC

Inventor： Han-Ping Chen ,  Henry Chin ,  Ashish Baraskar

IPC: G11C16/04 ,  G11C16/34 ,  G11C16/10 ,  G11C16/26 ,  H01L27/1157 ,  G11C11/56 ,  G11C16/08

Abstract: Techniques are described for reprogramming memory cells to tighten threshold voltage distributions and improve data retention. In one aspect, the memory cells of a word line WLn are reprogrammed after programming of memory cells of an adjacent, later-programmed word line WLn+1. The reprogramming can be limited to lower state memory cells of WLn which are adjacent to lower state memory cells of WL+1. A program pulse magnitude used in the reprogramming can be tailored to the data states of the WLn memory cell and the adjacent, WLn+1 memory cell. In some cases, the program pulse magnitudes can be grouped to reduce the implementation complexity and time. The reprogramming can occur after an initial program operation has completed, during an idle time of a control circuit.

公开(公告)号：US20200005878A1

公开(公告)日：2020-01-02

申请号：US16022373

申请日：2018-06-28

Applicant: SanDisk Technologies LLC

Inventor： Ching-Huang Lu ,  Han-Ping Chen ,  Chung-Yao Pai ,  Yingda Dong

IPC: G11C16/26 ,  G11C16/04 ,  G11C16/34 ,  G11C11/56

Abstract: Apparatuses and techniques are provided for accurately reading memory cells by compensating for lateral charge diffusion between adjacent memory cells. A selected memory cell is read with a compensation which is based on classifying the threshold voltages of adjacent memory cells into bins. In one aspect, the compensation is based on the level of the current control gate voltage of the selected word line. In another aspect, the classifying of the threshold voltages of the adjacent memory cells can be a function of temperature. In another aspect, a memory cell can be read with compensation after a previous read operation without compensation results in an uncorrectable error. In another aspect, the classifying uses more bins for a selected edge word line.