公开(公告)号：US08507191B2

公开(公告)日：2013-08-13

申请号：US12986806

申请日：2011-01-07

申请人： Dan B. Millward ,  Yuan He ,  Lijing Gou ,  Zishu Zhang ,  Anton J. deVilliers ,  Jianming Zhou ,  Kaveri Jain ,  Scott Light ,  Michael Hyatt

发明人： Dan B. Millward ,  Yuan He ,  Lijing Gou ,  Zishu Zhang ,  Anton J. deVilliers ,  Jianming Zhou ,  Kaveri Jain ,  Scott Light ,  Michael Hyatt

IPC分类号： G03F7/26

CPC分类号： H01L21/0276 ,  G03F7/0752 ,  G03F7/091 ,  Y10T428/24802

摘要： Methods of forming a patterned, silicon-enriched developable antireflective material. One such method comprises forming a silicon-enriched developable antireflective composition. The silicon-enriched developable antireflective composition comprises a silicon-enriched polymer and a crosslinking agent. The silicon-enriched polymer and the crosslinking agent are reacted to form a silicon-enriched developable antireflective material that is insoluble and has at least one acid-sensitive moiety. A positive-tone photosensitive material, such as a positive-tone photoresist, is formed over the silicon-enriched developable antireflective material and regions thereof are exposed to radiation. The exposed regions of the positive-tone photosensitive material and underlying regions of the silicon-enriched developable antireflective material are removed. Additional methods are disclosed, as are semiconductor device structures including a silicon-enriched developable antireflective material.

摘要翻译： 形成图案化的富含硅的可显影抗反射材料的方法。 一种这样的方法包括形成富含硅的可显影抗反射组合物。 富含硅的可显影抗反射组合物包含富含硅的聚合物和交联剂。 使富含硅的聚合物和交联剂反应以形成不溶性且具有至少一个酸敏感部分的富含硅的可显影抗反射材料。 在富含硅的可显影抗反射材料上形成正色感光材料，例如正色调光致抗蚀剂，并将其区域暴露于辐射。 去除了正色感光材料的曝光区域和富含硅的可显影抗反射材料的下面的区域。 公开了另外的方法，半导体器件结构包括富含硅的可显影抗反射材料。

公开(公告)号：US20120177891A1

公开(公告)日：2012-07-12

申请号：US12986806

申请日：2011-01-07

申请人： Dan B. Millward ,  Yuan He ,  Lijing Gou ,  Zishu Zhang ,  Anton J. deVilliers ,  Jianming Zhou ,  Kaveri Jain ,  Scott Light ,  Michael Hyatt

发明人： Dan B. Millward ,  Yuan He ,  Lijing Gou ,  Zishu Zhang ,  Anton J. deVilliers ,  Jianming Zhou ,  Kaveri Jain ,  Scott Light ,  Michael Hyatt

IPC分类号： B32B3/10 ,  H01L21/306

CPC分类号： H01L21/0276 ,  G03F7/0752 ,  G03F7/091 ,  Y10T428/24802

摘要： Methods of forming a patterned, silicon-enriched developable antireflective material. One such method comprises forming a silicon-enriched developable antireflective composition. The silicon-enriched developable antireflective composition comprises a silicon-enriched polymer and a crosslinking agent. The silicon-enriched polymer and the crosslinking agent are reacted to form a silicon-enriched developable antireflective material that is insoluble and has at least one acid-sensitive moiety. A positive-tone photosensitive material, such as a positive-tone photoresist, is formed over the silicon-enriched developable antireflective material and regions thereof are exposed to radiation. The exposed regions of the positive-tone photosensitive material and underlying regions of the silicon-enriched developable antireflective material are removed. Additional methods are disclosed, as are semiconductor device structures including a silicon-enriched developable antireflective material.

摘要翻译： 形成图案化的富含硅的可显影抗反射材料的方法。 一种这样的方法包括形成富含硅的可显影抗反射组合物。 富含硅的可显影抗反射组合物包含富含硅的聚合物和交联剂。 使富含硅的聚合物和交联剂反应以形成不溶性且具有至少一个酸敏感部分的富含硅的可显影抗反射材料。 在富含硅的可显影抗反射材料上形成正色感光材料，例如正色调光致抗蚀剂，并将其区域暴露于辐射。 去除了正色感光材料的曝光区域和富含硅的可显影抗反射材料的下面的区域。 公开了另外的方法，半导体器件结构包括富含硅的可显影抗反射材料。

公开(公告)号：US09213239B2

公开(公告)日：2015-12-15

申请号：US13746543

申请日：2013-01-22

申请人： Scott Light ,  Yuan He ,  Michael A. Many ,  Michael Hyatt

发明人： Scott Light ,  Yuan He ,  Michael A. Many ,  Michael Hyatt

IPC分类号： G03F7/22 ,  G03F7/20

CPC分类号： G03F7/0035 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0758 ,  G03F7/095 ,  G03F7/2022 ,  G03F7/32 ,  G03F7/322 ,  G03F7/325 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/32139

摘要： Methods of forming a pattern in a semiconductor device structure include deprotecting an outer portion of a first photosensitive resist material, forming a second photosensitive resist material, exposing portions of the first and second photosensitive resist materials to radiation, and removing the deprotected outer portion of the first photosensitive resist material and the exposed portions of the first and second photosensitive resist materials. Additional methods include forming a first resist material over a substrate to include a first portion and a relatively thicker second portion, deprotecting substantially the entire first portion and an outer portion of the second portion while leaving an inner portion of the second portion protected, and forming a second resist material over the substrate. A portion of the second resist material is exposed to radiation, and deprotected and exposed portions of the first and second resist materials are removed.

摘要翻译： 在半导体器件结构中形成图案的方法包括：使第一感光抗蚀剂材料的外部部分脱保护，形成第二感光抗蚀剂材料，将第一和第二光敏抗蚀剂材料的部分暴露于辐射，以及去除脱保护的外部部分 第一光敏抗蚀剂材料和第一和第二光敏抗蚀剂材料的暴露部分。 附加方法包括在衬底上形成第一抗蚀剂材料以包括第一部分和相对较厚的第二部分，基本上保护第二部分的整个第一部分和外部部分，同时留下第二部分的内部保护，并且形成 在衬底上的第二抗蚀剂材料。 第二抗蚀剂材料的一部分暴露于辐射，并且去除第一和第二抗蚀剂材料的去保护和暴露部分。

公开(公告)号：US20110305997A1

公开(公告)日：2011-12-15

申请号：US12815181

申请日：2010-06-14

申请人： Anton DeVilliers ,  Michael Hyatt

发明人： Anton DeVilliers ,  Michael Hyatt

IPC分类号： G03F7/20

CPC分类号： G03F7/2022 ,  G03F7/70466 ,  H01L21/76814

摘要： Methods of forming a pattern in a material and methods of forming openings in a material to be patterned are disclosed, such as a method that includes exposing first portions of a first material to radiation through at least two apertures of a mask arranged over the first material, shifting the mask so that the at least two apertures overlap a portion of the first portions of the first material, and exposing second portions of the first material to radiation through the at least two apertures. The first portions and the second portions will overlap in such a way that non-exposed portions of the first material are arranged between the first portions and second portions. The non-exposed or exposed portions of the first material may then be removed. The remaining first material may be used as a photoresist mask to form vias in an integrated circuit. The pattern of vias produced have the capability to exceed the current imaging resolution of a single exposure treatment.

摘要翻译： 公开了在材料中形成图案的方法和在待图案化的材料中形成开口的方法，例如包括将第一材料的第一部分暴露于通过布置在第一材料上的掩模的至少两个孔的辐射的方法 移动所述掩模使得所述至少两个孔与所述第一材料的所述第一部分的一部分重叠，以及将所述第一材料的第二部分暴露于通过所述至少两个孔的辐射。 第一部分和第二部分将以这样的方式重叠，使得第一材料的未暴露部分布置在第一部分和第二部分之间。 然后可以去除第一材料的未曝光或暴露部分。 剩余的第一材料可以用作光致抗蚀剂掩模以在集成电路中形成通孔。 所产生的通孔的图案具有超过单次曝光处理的当前成像分辨率的能力。

公开(公告)号：US08871407B2

公开(公告)日：2014-10-28

申请号：US13416351

申请日：2012-03-09

申请人： Anton Devilliers ,  Michael Hyatt

发明人： Anton Devilliers ,  Michael Hyatt

IPC分类号： G03F1/00 ,  G03F7/20 ,  H01L21/768

CPC分类号： G03F1/00 ,  G03F7/20 ,  H01L21/768

摘要： A method of forming a mask for use in fabricating an integrated circuit includes forming first non-removable portions of a photoresist material through a mask having a plurality of apertures, shifting the mask, forming second non-removable second portions of the photoresist material overlapping the first portions, and removing removable portions of the photoresist material arranged between the first and second portions. The formed photoresist mask may be used to form vias in an integrated circuit. The pattern of vias produced have the capability to exceed the current imaging resolution of a single exposure treatment.

摘要翻译： 形成用于制造集成电路的掩模的方法包括通过具有多个孔的掩模形成光致抗蚀剂材料的第一不可除去部分，移动掩模，形成与第一不可拆卸的光致抗蚀剂材料重叠的第二部分 第一部分，以及去除布置在第一和第二部分之间的光致抗蚀剂材料的可除去部分。 形成的光致抗蚀剂掩模可用于在集成电路中形成通孔。 所产生的通孔的图案具有超过单次曝光处理的当前成像分辨率的能力。

公开(公告)号：US08512938B2

公开(公告)日：2013-08-20

申请号：US12815181

申请日：2010-06-14

申请人： Anton DeVilliers ,  Michael Hyatt

发明人： Anton DeVilliers ,  Michael Hyatt

IPC分类号： G03F7/20

CPC分类号： G03F7/2022 ,  G03F7/70466 ,  H01L21/76814

摘要： Methods of forming a pattern in a material and methods of forming openings in a material to be patterned are disclosed, such as a method that includes exposing first portions of a first material to radiation through at least two apertures of a mask arranged over the first material, shifting the mask so that the at least two apertures overlap a portion of the first portions of the first material, and exposing second portions of the first material to radiation through the at least two apertures. The first portions and the second portions will overlap in such a way that non-exposed portions of the first material are arranged between the first portions and second portions. The non-exposed or exposed portions of the first material may then be removed. The remaining first material may be used as a photoresist mask to form vias in an integrated circuit. The pattern of vias produced have the capability to exceed the current imaging resolution of a single exposure treatment.

摘要翻译： 公开了在材料中形成图案的方法和在待图案化的材料中形成开口的方法，例如包括将第一材料的第一部分暴露于通过布置在第一材料上的掩模的至少两个孔的辐射的方法 移动所述掩模使得所述至少两个孔与所述第一材料的所述第一部分的一部分重叠，以及将所述第一材料的第二部分暴露于通过所述至少两个孔的辐射。 第一部分和第二部分将以这样的方式重叠，使得第一材料的未暴露部分布置在第一部分和第二部分之间。 然后可以去除第一材料的未曝光或暴露部分。 剩余的第一材料可以用作光致抗蚀剂掩模以在集成电路中形成通孔。 所产生的通孔的图案具有超过单次曝光处理的当前成像分辨率的能力。

公开(公告)号：US20120164566A1

公开(公告)日：2012-06-28

申请号：US13416351

申请日：2012-03-09

申请人： Anton Devilliers ,  Michael Hyatt

发明人： Anton Devilliers ,  Michael Hyatt

IPC分类号： G03F1/00

CPC分类号： G03F1/00 ,  G03F7/20 ,  H01L21/768

摘要： A method of forming a mask for use in fabricating an integrated circuit includes forming first non-removable portions of a photoresist material through a mask having a plurality of apertures, shifting the mask, forming second non-removable second portions of the photoresist material overlapping the first portions, and removing removable portions of the photoresist material arranged between the first and second portions. The formed photoresist mask may be used to form vias in an integrated circuit. The pattern of vias produced have the capability to exceed the current imaging resolution of a single exposure treatment.

摘要翻译： 形成用于制造集成电路的掩模的方法包括通过具有多个孔的掩模形成光致抗蚀剂材料的第一不可除去部分，移动掩模，形成与第一不可拆卸的光致抗蚀剂材料重叠的第二部分 第一部分，以及去除布置在第一和第二部分之间的光致抗蚀剂材料的可除去部分。 形成的光致抗蚀剂掩模可用于在集成电路中形成通孔。 所产生的通孔的图案具有超过单次曝光处理的当前成像分辨率的能力。

公开(公告)号：US20110217843A1

公开(公告)日：2011-09-08

申请号：US12716071

申请日：2010-03-02

申请人： Anton Devilliers ,  Michael Hyatt

发明人： Anton Devilliers ,  Michael Hyatt

IPC分类号： H01L21/768 ,  G03F7/20 ,  G03F1/00

CPC分类号： G03F1/00 ,  G03F7/20 ,  H01L21/768

摘要： A method of forming a mask for use in fabricating an integrated circuit includes forming first non-removable portions of a photoresist material through a mask having a plurality of apertures, shifting the mask, forming second non-removable second portions of the photoresist material overlapping the first portions, and removing removable portions of the photoresist material arranged between the first and second portions. The formed photoresist mask may be used to form vias in an integrated circuit. The pattern of vias produced have the capability to exceed the current imaging resolution of a single exposure treatment.

摘要翻译： 形成用于制造集成电路的掩模的方法包括通过具有多个孔的掩模形成光致抗蚀剂材料的第一不可除去部分，移动掩模，形成与第一不可拆卸的光致抗蚀剂材料重叠的第二部分 第一部分，以及去除布置在第一和第二部分之间的光致抗蚀剂材料的可除去部分。 形成的光致抗蚀剂掩模可用于在集成电路中形成通孔。 所产生的通孔的图案具有超过单次曝光处理的当前成像分辨率的能力。

公开(公告)号：US08153522B2

公开(公告)日：2012-04-10

申请号：US12716071

申请日：2010-03-02

申请人： Anton Devilliers ,  Michael Hyatt

发明人： Anton Devilliers ,  Michael Hyatt

IPC分类号： H01L21/44

CPC分类号： G03F1/00 ,  G03F7/20 ,  H01L21/768

摘要： A method of forming a mask for use in fabricating an integrated circuit includes forming first non-removable portions of a photoresist material through a mask having a plurality of apertures, shifting the mask, forming second non-removable second portions of the photoresist material overlapping the first portions, and removing removable portions of the photoresist material arranged between the first and second portions. The formed photoresist mask may be used to form vias in an integrated circuit. The pattern of vias produced have the capability to exceed the current imaging resolution of a single exposure treatment.

摘要翻译： 形成用于制造集成电路的掩模的方法包括通过具有多个孔的掩模形成光致抗蚀剂材料的第一不可除去部分，移动掩模，形成与第一不可拆卸的光致抗蚀剂材料重叠的第二部分 第一部分，以及去除布置在第一和第二部分之间的光致抗蚀剂材料的可除去部分。 形成的光致抗蚀剂掩模可用于在集成电路中形成通孔。 所产生的通孔的图案具有超过单次曝光处理的当前成像分辨率的能力。

公开(公告)号：US4674141A

公开(公告)日：1987-06-23

申请号：US727741

申请日：1985-04-26

申请人： Michael Hyatt ,  Mark James

发明人： Michael Hyatt ,  Mark James

IPC分类号： A47C19/00 ,  A47C19/02

CPC分类号： A47C19/005 ,  A47C19/021 ,  A47C19/022 ,  Y10T403/4648 ,  Y10T403/4685

摘要： A bracket for attaching a side rail to a headboard and a footboard to form a bed having an L-shaped body portion with a side section and an end section, means releasably securing the side section to the side rail, threaded means within the body portion end section to cooperatively receive screw means extending through at least the headboard to hold at least the headboard securely against the body portion end section and the side rail end portion.

摘要翻译： 一种用于将侧轨附接到床头板和脚踏板以形成具有L形主体部分的床的支架，其具有侧部和端部，用于将侧部可释放地固定到侧轨的装置，主体部分内的螺纹装置 端部，以协作地接收延伸穿过至少所述床头板的螺钉装置，以将至少所述床头板牢固地保持抵靠所述主体部分端部和所述侧轨端部。