公开(公告)号：US07169255B2

公开(公告)日：2007-01-30

申请号：US10358894

申请日：2003-02-06

申请人： Naoki Yasui ,  Masahiro Sumiya ,  Hitoshi Tamura ,  Seiichi Watanabe

发明人： Naoki Yasui ,  Masahiro Sumiya ,  Hitoshi Tamura ,  Seiichi Watanabe

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01J37/32174 ,  H01J37/32082

摘要： A plasma processing apparatus for providing plasma processing to an object placed inside a processing chamber includes a vacuum chamber, a process gas feeder feeding gas into the vacuum chamber, a wafer electrode disposed within the vacuum chamber for mounting the object, a wafer bias power generator supplying bias voltage to the wafer electrode, and a plasma generator for generating plasma within the vacuum chamber. The wafer bias power generator includes a clip circuit for clipping either a positive-side voltage or a negative-side voltage to a predetermined voltage.

摘要翻译： 一种用于向放置在处理室内的物体提供等离子体处理的等离子体处理装置包括真空室，将真空室内的气体输送到工作气体供给装置，设置在真空室内的用于安装物体的晶片电极，晶片偏置功率发生器 向晶片电极提供偏置电压，以及用于在真空室内产生等离子体的等离子体发生器。 晶片偏置功率发生器包括用于将正侧电压或负侧电压截止为预定电压的钳位电路。

公开(公告)号：US20090194506A1

公开(公告)日：2009-08-06

申请号：US12420370

申请日：2009-04-08

申请人： Hitoshi Tamura ,  Naoki Yasui ,  Seiichi Watanabe

发明人： Hitoshi Tamura ,  Naoki Yasui ,  Seiichi Watanabe

IPC分类号： B44C1/22

CPC分类号： H01L21/6833 ,  H01J37/32706

摘要： The invention provides a plasma processing apparatus and a plasma processing method capable of controlling the voltage of the processing substrate with high accuracy, thereby enabling a highly accurate plasma processing. According to the invention, a voltage of the processing substrate is measured using a processing substrate with a voltage probe prepared in advance, and based on a bias voltage supplied to an electrostatic chuck mechanism and a bias current flowing through the electrostatic chuck mechanism, a capacity component which is an impedance representing the electric property of the electrostatic chuck mechanism is computed numerically. Then, based on a predetermined expression, the voltage of the processing substrate is estimated using the bias voltage of the processing substrate to be measured, the bias current flowing through the electrostatic chuck mechanism and the capacity component which is the impedance acquired in advance.

摘要翻译： 本发明提供一种能够高精度地控制处理基板的电压的等离子体处理装置和等离子体处理方法，能够进行高精度的等离子体处理。 根据本发明，使用具有预先制备的电压探针的处理基板来测量处理基板的电压，并且基于提供给静电卡盘机构的偏置电压和流过静电卡盘机构的偏置电流， 数字地计算作为表示静电卡盘机构的电特性的阻抗的分量。 然后，基于预定表达式，使用待测量的处理基板的偏置电压，流过静电卡盘机构的偏置电流和预先获取的阻抗的电容分量来估计处理基板的电压。

公开(公告)号：US08142674B2

公开(公告)日：2012-03-27

申请号：US12420370

申请日：2009-04-08

申请人： Hitoshi Tamura ,  Naoki Yasui ,  Seiichi Watanabe

发明人： Hitoshi Tamura ,  Naoki Yasui ,  Seiichi Watanabe

IPC分类号： H01L21/306 ,  B44C1/22

CPC分类号： H01L21/6833 ,  H01J37/32706

摘要： The invention provides a plasma processing apparatus and a plasma processing method capable of controlling the voltage of the processing substrate with high accuracy, thereby enabling a highly accurate plasma processing. According to the invention, a voltage of the processing substrate is measured using a processing substrate with a voltage probe prepared in advance, and based on a bias voltage supplied to an electrostatic chuck mechanism and a bias current flowing through the electrostatic chuck mechanism, a capacity component which is an impedance representing the electric property of the electrostatic chuck mechanism is computed numerically. Then, based on a predetermined expression, the voltage of the processing substrate is estimated using the bias voltage of the processing substrate to be measured, the bias current flowing through the electrostatic chuck mechanism and the capacity component which is the impedance acquired in advance.

摘要翻译： 本发明提供一种能够高精度地控制处理基板的电压的等离子体处理装置和等离子体处理方法，能够进行高精度的等离子体处理。 根据本发明，使用具有预先制备的电压探针的处理基板来测量处理基板的电压，并且基于提供给静电卡盘机构的偏置电压和流过静电卡盘机构的偏置电流， 数字地计算作为表示静电卡盘机构的电特性的阻抗的分量。 然后，基于预定表达式，使用待测量的处理基板的偏置电压，流过静电卡盘机构的偏置电流和预先获取的阻抗的电容分量来估计处理基板的电压。

公开(公告)号：US20070193976A1

公开(公告)日：2007-08-23

申请号：US11506788

申请日：2006-08-21

申请人： Hitoshi Tamura ,  Naoki Yasui ,  Seiichi Watanabe

发明人： Hitoshi Tamura ,  Naoki Yasui ,  Seiichi Watanabe

IPC分类号： G01L21/30 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/6833 ,  H01J37/32706

摘要： The invention provides a plasma processing apparatus and a plasma processing method capable of controlling the voltage of the processing substrate with high accuracy, thereby enabling a highly accurate plasma processing. According to the invention, a voltage Vw of the processing substrate is measured using a processing substrate with a voltage probe prepared in advance, and based on a bias voltage Vesc applied to an electrostatic chuck mechanism 200 and a bias current Iesc flowing through the electrostatic chuck mechanism 200, a capacity component Cesc which is an impedance representing the electric property of the electrostatic chuck mechanism 200 is computed numerically. Then, based on a predetermined expression, the voltage Vw of the processing substrate 102 is estimated using the bias voltage Vesc of the processing substrate 102 to be measured, the bias current Iesc flowing through the electrostatic chuck mechanism 200 and the capacity component Cesc which is the impedance acquired in advance.

摘要翻译： 本发明提供一种能够高精度地控制处理基板的电压的等离子体处理装置和等离子体处理方法，能够进行高精度的等离子体处理。 根据本发明，使用具有预先制备的电压探针的处理基板，并且基于施加到静电卡盘机构200的偏置电压Vesc和流过静电卡盘的偏置电流Iesc来测量处理基板的电压Vw 机构200，以数值方式计算作为代表静电卡盘机构200的电气特性的阻抗的电容分量Cesc。 然后，基于规定的表达式，使用待测量的处理基板102的偏置电压Vesc，流过静电卡盘机构200的偏置电流Iesc和电容成分Cesc来估计处理基板102的电压Vw 预先获得的阻抗。

公开(公告)号：US20120145323A1

公开(公告)日：2012-06-14

申请号：US13399465

申请日：2012-02-17

申请人： Hitoshi Tamura ,  Naoki Yasui ,  Seiichi Watanabe

发明人： Hitoshi Tamura ,  Naoki Yasui ,  Seiichi Watanabe

IPC分类号： B05C11/00

CPC分类号： H01L21/6833 ,  H01J37/32706

摘要： A plasma processing apparatus for subjecting a substrate to be processed to plasma processing includes a processing chamber, a substrate electrode having an electrostatic chuck mechanism, a plasma generator, a high-frequency bias power supply which applies a high-frequency bias voltage to the substrate electrode, a voltage monitor which monitors the high-frequency bias voltage, a current monitor which monitors a high-frequency bias current, a measurement storage unit which stores a resistance component, an induction component and a capacity component of the electrostatic chuck mechanism, which have been calculated beforehand as fitting parameters of an expression V w = V esc - R esc  I esc - L esc   I esc  t - 1 C esc  ∫ I esc   t + A , ( A ) that is an approximate curve of a correlation among a voltage of the substrate, a computing unit which estimates the voltage of the substrate according to the expression, and a control unit that generates a control signal for the high-frequency bias power supply based on the voltage of the substrate.

摘要翻译： 用于对待处理的基板进行等离子体处理的等离子体处理装置包括处理室，具有静电卡盘机构的基板电极，等离子体发生器，向基板施加高频偏置电压的高频偏置电源 电极，监视高频偏置电压的电压监视器，监视高频偏置电流的电流监视器，存储电阻分量的测量存储单元，静电卡盘机构的感应部件和电容分量，其中 预先计算出的表达式的拟合参数V w = V esc - R esc I I I - - - - - - - （ - 衬底的电压，根据表达式估计衬底的电压的计算单元和产生t的控制信号的控制单元之间的相关性的近似曲线 他基于基板电压的高频偏置电源。

公开(公告)号：US09196399B2

公开(公告)日：2015-11-24

申请号：US14343020

申请日：2012-09-04

申请人： Masahiro Sugimoto ,  Hirokazu Tsubouchi ,  Hitoshi Shimizu ,  Toshiya Okada ,  Toshirou Sakai ,  Kazuya Takahata ,  Hitoshi Tamura ,  Toshiyuki Mito

发明人： Masahiro Sugimoto ,  Hirokazu Tsubouchi ,  Hitoshi Shimizu ,  Toshiya Okada ,  Toshirou Sakai ,  Kazuya Takahata ,  Hitoshi Tamura ,  Toshiyuki Mito

IPC分类号： H01L39/14 ,  H01B12/10 ,  H01B13/00 ,  H01L39/24

CPC分类号： H01B12/10 ,  H01B13/00 ,  H01L39/14 ,  H01L39/2403 ,  H01L39/2409 ,  Y10T29/49014

摘要： A method for producing a composite superconductor includes: a structure forming process of forming a structure including a metal covering member (20) including at least one to-be-joined portion, a superconductor (30) arranged inside the metal covering member, and a reinforcing member (40) arranged between the superconductor (30) and the at least one to-be-joined portion; and a joining process of joining thereafter the at least one to-be-joined portion.

摘要翻译： 复合超导体的制造方法包括：形成包括包括至少一个待接合部的金属覆盖部件（20）的结构的结构形成工序，配置在金属覆盖部件内的超导体（30），以及 配置在超导体（30）与至少一个被接合部之间的加强部件（40） 以及其后连接至少一个待接合部分的接合过程。

公开(公告)号：US08848216B2

公开(公告)日：2014-09-30

申请号：US12768162

申请日：2010-04-27

申请人： Hirotaka Kawabata ,  Hitoshi Tamura ,  Hideki Fujii ,  Isao Tanaka ,  Minoru Yoshida ,  Satoshi Watanabe

发明人： Hirotaka Kawabata ,  Hitoshi Tamura ,  Hideki Fujii ,  Isao Tanaka ,  Minoru Yoshida ,  Satoshi Watanabe

IPC分类号： G06F3/12 ,  H04N1/333 ,  H04N1/32 ,  H04N1/00 ,  H04N1/327 ,  H04M11/06

CPC分类号： H04N1/00214 ,  H04M11/066 ,  H04N1/0022 ,  H04N1/32037 ,  H04N1/32058 ,  H04N1/3209 ,  H04N1/32797 ,  H04N1/33323 ,  H04N1/33338 ,  H04N1/33361 ,  H04N1/33369 ,  H04N1/33376 ,  H04N2201/002 ,  H04N2201/0093 ,  H04N2201/33342

摘要： A modem transmission level and modem sensitivity which are communication control information corresponding to the connection form of each destination device are registered in advance in a destination information storage unit so as to be correlated with an abbreviated dialing number of the destination. When a communication instruction using an abbreviated dialing number is received, if a modem transmission level and modem sensitivity are registered in the destination information storage unit as corresponding to the received abbreviated dialing number, the modem is controlled based on those registered modem transmission level and modem sensitivity. If neither a modem transmission level or modem sensitivity is registered as corresponding to the received abbreviated dialing number, the modem is controlled according to a modem transmission level and modem sensitivity that are registered in advance in the apparatus.

摘要翻译： 作为与目的地设备的连接形式相对应的通信控制信息的调制解调器传输级别和调制解调器灵敏度预先登记在目的地信息存储单元中，以便与目的地的缩位拨号号码相关联。 当接收到使用缩位拨号号码的通信指令时，如果调制解调器发送电平和调制解调器灵敏度被登记在目的地信息存储单元中，对应于所接收的缩位拨号号码，则基于这些已登记的调制解调器发送电平和调制解调器来控制调制解调器 灵敏度。 如果调制解调器传输级别或调制解调器灵敏度都没有被注册为对应于所接收的缩位拨号号码，则根据在设备中预先登记的调制解调器传输级别和调制解调器灵敏度来控制调制解调器。

公开(公告)号：US20100116865A1

公开(公告)日：2010-05-13

申请号：US12528493

申请日：2008-02-22

申请人： Tatsushi Ogawa ,  Kouji Kubo ,  Takao Tsukada ,  Norimitsu Sekiguchi ,  Yoshihiko Kondo ,  Tomokazu Nagata ,  Michiaki Adachi ,  Toshimichi Arai ,  Hitoshi Tamura ,  Takeo Fujiyama

发明人： Tatsushi Ogawa ,  Kouji Kubo ,  Takao Tsukada ,  Norimitsu Sekiguchi ,  Yoshihiko Kondo ,  Tomokazu Nagata ,  Michiaki Adachi ,  Toshimichi Arai ,  Hitoshi Tamura ,  Takeo Fujiyama

IPC分类号： B25C1/04 ,  B25C7/00

CPC分类号： B25C1/047

摘要： A pneumatic tool includes a tool body, a nose part for ejecting a nail, which is provided in a lower part of the tool body, an air chamber for storing compressed air, which is provided in the tool body, an air supply pipe for supplying the compressed air from an air supply source to the air chamber, an air duster, an air duster pipeline connected to an air outlet of the air duster, and an air duster valve for controlling supply of the compressed air to the air duster pipeline.

摘要翻译： 气动工具包括工具主体，用于喷射钉的鼻部，其设置在工具主体的下部，设置在工具主体中的用于存储压缩空气的空气室，用于供应的供气管 从空气供给源到空气室的压缩空气，连接到空气除尘器的空气出口的空气除尘器，空气除尘器管道以及用于控制向空气除尘器管道供应压缩空气的空气除尘器阀。

公开(公告)号：US07662713B2

公开(公告)日：2010-02-16

申请号：US12005383

申请日：2007-12-27

申请人： Goro Nakatani ,  Hitoshi Tamura

发明人： Goro Nakatani ,  Hitoshi Tamura

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/76849 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device provided with: a first interconnection layer provided on a semiconductor substrate; an interlevel insulation film provided over the first interconnection layer; a barrier layer provided between the first interconnection layer and the interlevel insulation film; and a second interconnection layer of gold provided as an uppermost interconnection layer on the interlevel insulation film. The barrier layer is formed in a region of the first interconnection layer including an interlevel connection opening region of the interlevel insulation, and the region is greater than the interlevel connection opening region. The second interconnection layer is electrically connected to the first interconnection layer via the barrier layer in the interlevel connection opening.

摘要翻译： 一种半导体器件，具备：设置在半导体衬底上的第一互连层; 设置在所述第一互连层上的层间绝缘膜; 设置在所述第一互连层和所述层间绝缘膜之间的阻挡层; 以及在层间绝缘膜上设置为最上层互连层的金的第二互连层。 阻挡层形成在第一互连层的包含层间绝缘体的层间连接开口区域的区域中，并且该区域大于层间连接开口区域。 第二互连层通过层间连接开口中的阻挡层电连接到第一互连层。

公开(公告)号：US20080061501A1

公开(公告)日：2008-03-13

申请号：US11826643

申请日：2007-07-17

申请人： Hitoshi Tamura ,  Masaaki Uchiyama ,  Tsuyoshi Shiokawa

发明人： Hitoshi Tamura ,  Masaaki Uchiyama ,  Tsuyoshi Shiokawa

IPC分类号： B65H37/00

CPC分类号： B65H29/12 ,  B65H2511/514 ,  B65H2515/34 ,  B65H2701/1311 ,  B65H2801/27 ,  B65H2220/01 ,  B65H2220/02 ,  B65H2220/11

摘要： A sheet post-processing apparatus including: a sheet conveying section for conveying sheets to an intermediate stacker by a plurality of conveying rollers containing a conveying roller capable of changing the pressing force against an opposing roller; and a control section wherein, when the first sheet to be assigned to a succeeding bundle of sheets has passed through the conveying roller capable of changing the aforementioned pressing force, and has arrived upstream from the aforementioned intermediate stacker during post-processing a preceding bundle of sheets, the pressing force of the conveying roller capable of changing the aforementioned pressing force is made smaller than the value at the time of conveyance; and after a second sheet has passed through the conveying roller capable of changing the aforementioned pressing force, the pressure is changed to the value at the time of the conveyance.

摘要翻译： 一种纸张后处理装置，包括：纸张输送部，用于通过多个输送辊将纸张输送到中间堆垛机，所述多个输送辊包含能够改变相对辊的按压力的输送辊; 以及控制部，其中，当分配给后一束纸片的第一纸张已经通过能够改变上述按压力的输送辊时，并且在后处理期间已经从上述中间堆垛机的上游到达前一束 使能够改变上述按压力的输送辊的按压力小于输送时的值; 并且在第二片材通过能够改变上述按压力的输送辊之后，将压力改变为输送时的值。