公开(公告)号：US07029594B2

公开(公告)日：2006-04-18

申请号：US10658398

申请日：2003-09-10

申请人： Naoki Yasui ,  Masahiro Sumiya ,  Hitoshi Tamura ,  Seiichi Watanabe

发明人： Naoki Yasui ,  Masahiro Sumiya ,  Hitoshi Tamura ,  Seiichi Watanabe

IPC分类号： G01R31/00 ,  H01L21/00

CPC分类号： H01J37/32174 ,  H01J37/32082

摘要： A plasma processing method for providing plasma processing to an object to be processed disposed within a vacuum processing chamber in which a process gas feeding device feeds process gas into the vacuum processing chamber, a wafer electrode is placed within the vacuum processing chamber for mounting the object to be processed, a wafer bias power generator applies self-bias voltage to the wafer electrode, and a plasma generator generates plasma within the vacuum processing chamber. The plasma processing method flattens either a positive side voltage or a negative side voltage of a voltage waveform of a high frequency voltage generated to the object at an arbitrary voltage.

摘要翻译： 一种等离子体处理方法，用于对处理气体供给装置将处理气体进入真空处理室的真空处理室内的待处理物体进行等离子体处理，将晶片电极置于真空处理室内，以安装物体 为了进行处理，晶片偏置功率发生器对晶片电极施加自偏压，等离子体发生器在真空处理室内产生等离子体。 等离子体处理方法使在任意电压下对物体产生的高频电压的电压波形的正侧电压或负侧电压平坦化。

公开(公告)号：US07169255B2

公开(公告)日：2007-01-30

申请号：US10358894

申请日：2003-02-06

申请人： Naoki Yasui ,  Masahiro Sumiya ,  Hitoshi Tamura ,  Seiichi Watanabe

发明人： Naoki Yasui ,  Masahiro Sumiya ,  Hitoshi Tamura ,  Seiichi Watanabe

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01J37/32174 ,  H01J37/32082

摘要： A plasma processing apparatus for providing plasma processing to an object placed inside a processing chamber includes a vacuum chamber, a process gas feeder feeding gas into the vacuum chamber, a wafer electrode disposed within the vacuum chamber for mounting the object, a wafer bias power generator supplying bias voltage to the wafer electrode, and a plasma generator for generating plasma within the vacuum chamber. The wafer bias power generator includes a clip circuit for clipping either a positive-side voltage or a negative-side voltage to a predetermined voltage.

摘要翻译： 一种用于向放置在处理室内的物体提供等离子体处理的等离子体处理装置包括真空室，将真空室内的气体输送到工作气体供给装置，设置在真空室内的用于安装物体的晶片电极，晶片偏置功率发生器 向晶片电极提供偏置电压，以及用于在真空室内产生等离子体的等离子体发生器。 晶片偏置功率发生器包括用于将正侧电压或负侧电压截止为预定电压的钳位电路。

公开(公告)号：US07615132B2

公开(公告)日：2009-11-10

申请号：US10795353

申请日：2004-03-09

申请人： Naoki Yasui ,  Seiichi Watanabe ,  Masahiro Sumiya ,  Hitoshi Tamura

发明人： Naoki Yasui ,  Seiichi Watanabe ,  Masahiro Sumiya ,  Hitoshi Tamura

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32082 ,  H01J37/32623 ,  H01J37/3266 ,  H01J37/32706

摘要： A plasma processing apparatus suitable for high-speed and high-definition etching is provided. By applying to a wafer chucking electrode 9 a voltage waveform in which an absolute value of high frequency voltage increases with time and switching between a positive voltage and a negative voltage occurs, a rectangular high frequency voltage is caused to be generated in the wafer 10, with the result that the duty ratio of the rectangular high frequency voltage decreases and that the high energy ion ratio in the energy distribution of ions incident on the wafer increases. Therefore, high efficiency and high accuracy etching becomes possible, providing the advantage that the material selection ratio is improved.

摘要翻译： 提供了适用于高速和高清晰刻蚀的等离子体处理装置。 通过向晶片夹持电极9施加高频电压的绝对值随着时间的推移而在正电压和负电压之间的切换的电压波形，在晶片10中产生矩形的高频电压， 结果，矩形高频电压的占空比降低，并且入射在晶片上的离子的能量分布中的高能量离子比增加。 因此，高效率和高精度蚀刻成为可能，提供了材料选择比提高的优点。

公开(公告)号：US20050081999A1

公开(公告)日：2005-04-21

申请号：US10795353

申请日：2004-03-09

申请人： Naoki Yasui ,  Seiichi Watanabe ,  Masahiro Sumiya ,  Hitoshi Tamura

发明人： Naoki Yasui ,  Seiichi Watanabe ,  Masahiro Sumiya ,  Hitoshi Tamura

IPC分类号： H01J37/32 ,  C23F1/00

CPC分类号： H01J37/32082 ,  H01J37/32623 ,  H01J37/3266 ,  H01J37/32706

摘要： A plasma processing apparatus suitable for high-speed and high-definition etching is provided. By applying to a wafer chucking electrode 9 a voltage waveform in which an absolute value of high frequency voltage increases with time and switching between a positive voltage and a negative voltage occurs, a rectangular high frequency voltage is caused to be generated in the wafer 10, with the result that the duty ratio of the rectangular high frequency voltage decreases and that the high energy ion ratio in the energy distribution of ions incident on the wafer increases. Therefore, high efficiency and high accuracy etching becomes possible, providing the advantage that the material selection ratio is improved.

摘要翻译： 提供了适用于高速和高清晰刻蚀的等离子体处理装置。 通过向晶片夹持电极9施加高频电压的绝对值随着时间的推移而在正电压和负电压之间的切换的电压波形，在晶片10中产生矩形的高频电压， 结果，矩形高频电压的占空比降低，并且入射在晶片上的离子的能量分布中的高能量离子比增加。 因此，高效率和高精度蚀刻成为可能，提供了材料选择比提高的优点。

公开(公告)号：US06806201B2

公开(公告)日：2004-10-19

申请号：US09946618

申请日：2001-09-06

申请人： Masahiro Sumiya ,  Naoki Yasui ,  Seiichi Watanabe ,  Hitoshi Tamura

发明人： Masahiro Sumiya ,  Naoki Yasui ,  Seiichi Watanabe ,  Hitoshi Tamura

IPC分类号： H01L21461

CPC分类号： H01J37/32082 ,  C23C16/507 ,  C23C16/509 ,  C23C16/511 ,  H01J37/32183

摘要： A plasma processing method and apparatus are proposed that are suited to process the surface of a sample such as a semiconductor device using plasma. The bias voltages to the plasma generation and sample are respectively independently controlled, the RF voltage waveform as the bias voltage to a substrate electrode on which the sample is placed is flattened at an arbitrary voltage level, thereby controlling the energy distribution of ions incident to the sample to be a desired distribution. Therefore, plasma processing can be carried out with high precision.

摘要翻译： 提出了一种等离子体处理方法和装置，其适用于使用等离子体处理诸如半导体器件的样品的表面。 分别独立地控制对等离子体产生和样品的偏置电压，将作为放置样品的基板电极的偏置电压的RF电压波形平坦化为任意的电压电平，由此控制入射到等离子体的离子的能量分布 样品成​​为所需的分布。 因此，可以高精度地进行等离子体处理。

公开(公告)号：US07373899B2

公开(公告)日：2008-05-20

申请号：US10954074

申请日：2004-09-30

申请人： Masahiro Sumiya ,  Naoki Yasui ,  Seiichi Watanabe ,  Hitoshi Tamura

发明人： Masahiro Sumiya ,  Naoki Yasui ,  Seiichi Watanabe ,  Hitoshi Tamura

IPC分类号： H01L21/00

CPC分类号： H01J37/32082 ,  C23C16/507 ,  C23C16/509 ,  C23C16/511 ,  H01J37/32183

摘要： A plasma processing apparatus having a processing chamber connected to a vacuum exhauster so that its inside pressure can be reduced by the vacuum exhauster, a gas feed unit for supplying gas into the processing chamber, a substrate electrode provided in the processing chamber and on which a sample can be placed, an RF power supply connected through a matching circuit to the substrate electrode, plasma generating means for generating plasma within the processing chamber and a voltage waveform control circuit provided within the matching circuit or between the substrate electrode and the matching circuit to flatten the voltage waveform from the RF power supply.

摘要翻译： 一种等离子体处理装置，其具有连接到真空排气器的处理室，使得其内部压力可以通过真空排气器减少;气体供给单元，用于将气体供应到处理室中;基板电极，设置在处理室中， 可以放置样品，通过匹配电路连接到基板电极的RF电源，用于在处理室内产生等离子体的等离子体产生装置和设置在匹配电路内或者在基板电极和匹配电路之间的电压波形控制电路， 平坦化RF电源的电压波形。

公开(公告)号：US20050034813A1

公开(公告)日：2005-02-17

申请号：US10954074

申请日：2004-09-30

申请人： Masahiro Sumiya ,  Naoki Yasui ,  Seiichi Watanabe ,  Hitoshi Tamura

发明人： Masahiro Sumiya ,  Naoki Yasui ,  Seiichi Watanabe ,  Hitoshi Tamura

IPC分类号： C23C16/507 ,  C23C16/509 ,  C23C16/511 ,  H01J37/32 ,  C23F1/00

CPC分类号： H01J37/32082 ,  C23C16/507 ,  C23C16/509 ,  C23C16/511 ,  H01J37/32183

摘要： A plasma processing apparatus having a processing chamber connected to a vacuum exhauster so that its inside pressure can be reduced by the vacuum exhauster, a gas feed unit for supplying gas into the processing chamber, a substrate electrode provided in the processing chamber and on which a sample can be placed, an RF power supply connected through a matching circuit to the substrate electrode, plasma generating means for generating plasma within the processing chamber and a voltage waveform control circuit provided within the matching circuit or between the substrate electrode and the matching circuit to flatten the voltage waveform from the RF power supply.

摘要翻译： 一种等离子体处理装置，其具有连接到真空排气器的处理室，使得其内部压力可以通过真空排气器减少;气体供给单元，用于将气体供应到处理室中;基板电极，设置在处理室中， 可以放置样品，通过匹配电路连接到基板电极的RF电源，用于在处理室内产生等离子体的等离子体产生装置和设置在匹配电路内或者在基板电极和匹配电路之间的电压波形控制电路， 平坦化RF电源的电压波形。

公开(公告)号：US20050155711A1

公开(公告)日：2005-07-21

申请号：US11053236

申请日：2005-02-09

申请人： Masahiro Sumiya ,  Naoki Yasui ,  Seiichi Watanabe

发明人： Masahiro Sumiya ,  Naoki Yasui ,  Seiichi Watanabe

IPC分类号： C23C16/44 ,  C23C16/50 ,  C23C16/509 ,  C23F1/00

CPC分类号： C23C16/5096 ,  C23C16/4401 ,  H01J37/32165

摘要： Processing technique using plasma to process the surface of a sample such as semiconductor device. The phases of RF bias voltages applied to a substrate electrode and an antenna electrode opposed thereto are controlled to be opposite to each other so that either one of the electrodes is forced to always function as ground. Accordingly, current flowing to cross the magnetic field for controlling the plasma is decreased, and the potential distribution difference in the surface of the sample to be processed is reduced, so that the charging damage can be suppressed. Energy of ions incident to the sample to be processed can be controlled to perform high-precision etching. The plasma potential can also be controlled so that the strength of the ion impact to the inner wall of the chamber can be reduced, thereby reducing particles detached from the inner wall of the processing apparatus to improve the throughput.

摘要翻译： 使用等离子体处理诸如半导体器件的样品表面的处理技术。 施加到与其相对的基板电极和天线电极的RF偏置电压的相位被控制为彼此相反，使得电极中的任一个被强制地始终用作接地。 因此，流过用于控制等离子体的磁场的电流减少，并且待处理样品的表面的电位分布差减小，从而可以抑制充电损伤。 可以控制入射到待处理样品的离子的能量，以进行高精度蚀刻。 也可以控制等离子体电位，使离子冲击室内壁的强度降低，从而减少从处理装置的内壁脱离的颗粒，以提高生产量。

公开(公告)号：US06875366B2

公开(公告)日：2005-04-05

申请号：US09946491

申请日：2001-09-06

申请人： Masahiro Sumiya ,  Naoki Yasui ,  Seiichi Watanabe

发明人： Masahiro Sumiya ,  Naoki Yasui ,  Seiichi Watanabe

IPC分类号： C23C16/44 ,  C23C16/50 ,  C23C16/509 ,  H01L21/00

CPC分类号： C23C16/5096 ,  C23C16/4401 ,  H01J37/32165

摘要： Processing technique using plasma to process the surface of a sample such as semiconductor device. The phases of RF bias voltages applied to a substrate electrode and an antenna electrode opposed thereto are controlled to be opposite to each other so that either one of the electrodes is forced to always function as ground. Therefore, the current flowing to cross the magnetic field for controlling the plasma is decreased, and the potential distribution difference in the surface of the sample to be processed is reduced, so that the charging damage can be suppressed. Energy of ions incident to the sample to be processed can be controlled to perform high-precision etching. The plasma potential can also be controlled so that the strength of the ion impact to the inner wall of the chamber can be reduced, thereby reducing particles detached from the inner wall of the processing apparatus to improve the throughput.

摘要翻译： 使用等离子体处理诸如半导体器件的样品表面的处理技术。 施加到与其相对的基板电极和天线电极的RF偏置电压的相位被控制为彼此相反，使得电极中的任一个被强制地始终用作接地。 因此，流过用于控制等离子体的磁场的电流减少，并且待处理样品的表面的电位分布差减小，从而可以抑制充电损伤。 可以控制入射到待处理样品的离子的能量，以进行高精度蚀刻。 也可以控制等离子体电位，使离子冲击室内壁的强度降低，从而减少从处理装置的内壁脱离的颗粒，以提高生产量。

公开(公告)号：US20090194506A1

公开(公告)日：2009-08-06

申请号：US12420370

申请日：2009-04-08

申请人： Hitoshi Tamura ,  Naoki Yasui ,  Seiichi Watanabe

发明人： Hitoshi Tamura ,  Naoki Yasui ,  Seiichi Watanabe

IPC分类号： B44C1/22

CPC分类号： H01L21/6833 ,  H01J37/32706

摘要： The invention provides a plasma processing apparatus and a plasma processing method capable of controlling the voltage of the processing substrate with high accuracy, thereby enabling a highly accurate plasma processing. According to the invention, a voltage of the processing substrate is measured using a processing substrate with a voltage probe prepared in advance, and based on a bias voltage supplied to an electrostatic chuck mechanism and a bias current flowing through the electrostatic chuck mechanism, a capacity component which is an impedance representing the electric property of the electrostatic chuck mechanism is computed numerically. Then, based on a predetermined expression, the voltage of the processing substrate is estimated using the bias voltage of the processing substrate to be measured, the bias current flowing through the electrostatic chuck mechanism and the capacity component which is the impedance acquired in advance.

摘要翻译： 本发明提供一种能够高精度地控制处理基板的电压的等离子体处理装置和等离子体处理方法，能够进行高精度的等离子体处理。 根据本发明，使用具有预先制备的电压探针的处理基板来测量处理基板的电压，并且基于提供给静电卡盘机构的偏置电压和流过静电卡盘机构的偏置电流， 数字地计算作为表示静电卡盘机构的电特性的阻抗的分量。 然后，基于预定表达式，使用待测量的处理基板的偏置电压，流过静电卡盘机构的偏置电流和预先获取的阻抗的电容分量来估计处理基板的电压。