公开(公告)号：US09196399B2

公开(公告)日：2015-11-24

申请号：US14343020

申请日：2012-09-04

申请人： Masahiro Sugimoto ,  Hirokazu Tsubouchi ,  Hitoshi Shimizu ,  Toshiya Okada ,  Toshirou Sakai ,  Kazuya Takahata ,  Hitoshi Tamura ,  Toshiyuki Mito

发明人： Masahiro Sugimoto ,  Hirokazu Tsubouchi ,  Hitoshi Shimizu ,  Toshiya Okada ,  Toshirou Sakai ,  Kazuya Takahata ,  Hitoshi Tamura ,  Toshiyuki Mito

IPC分类号： H01L39/14 ,  H01B12/10 ,  H01B13/00 ,  H01L39/24

CPC分类号： H01B12/10 ,  H01B13/00 ,  H01L39/14 ,  H01L39/2403 ,  H01L39/2409 ,  Y10T29/49014

摘要： A method for producing a composite superconductor includes: a structure forming process of forming a structure including a metal covering member (20) including at least one to-be-joined portion, a superconductor (30) arranged inside the metal covering member, and a reinforcing member (40) arranged between the superconductor (30) and the at least one to-be-joined portion; and a joining process of joining thereafter the at least one to-be-joined portion.

摘要翻译： 复合超导体的制造方法包括：形成包括包括至少一个待接合部的金属覆盖部件（20）的结构的结构形成工序，配置在金属覆盖部件内的超导体（30），以及 配置在超导体（30）与至少一个被接合部之间的加强部件（40） 以及其后连接至少一个待接合部分的接合过程。

公开(公告)号：US20140274726A1

公开(公告)日：2014-09-18

申请号：US14343020

申请日：2012-09-04

申请人： Masahiro Sugimoto ,  Hirokazu Tsubouchi ,  Hitoshi Shimizu ,  Toshiya Okada ,  Toshirou Sakai ,  Kazuya Takahata ,  Hitoshi Tamura ,  Toshiyuki Mito

发明人： Masahiro Sugimoto ,  Hirokazu Tsubouchi ,  Hitoshi Shimizu ,  Toshiya Okada ,  Toshirou Sakai ,  Kazuya Takahata ,  Hitoshi Tamura ,  Toshiyuki Mito

IPC分类号： H01B12/10 ,  H01B13/00

CPC分类号： H01B12/10 ,  H01B13/00 ,  H01L39/14 ,  H01L39/2403 ,  H01L39/2409 ,  Y10T29/49014

摘要： A method for producing a composite superconductor includes: a structure forming process of forming a structure including a metal covering member (20) including at least one to-be-joined portion, a superconductor (30) arranged inside the metal covering member, and a reinforcing member (40) arranged between the superconductor (30) and the at least one to-be-joined portion; and a joining process of joining thereafter the at least one to-be-joined portion.

摘要翻译： 复合超导体的制造方法包括：形成包括包括至少一个待接合部的金属覆盖部件（20）的结构的结构形成工序，配置在金属覆盖部件内的超导体（30），以及 配置在超导体（30）与至少一个被接合部之间的加强部件（40） 以及其后连接至少一个待接合部分的接合过程。

公开(公告)号：US20100222222A1

公开(公告)日：2010-09-02

申请号：US12160964

申请日：2008-07-15

申请人： Toshiyuki Mito ,  Kazuya Takahata ,  Toshiya Okada ,  Toshio Ushiyama ,  Masahiro Sugimoto ,  Hirokazu Tsubouchi

发明人： Toshiyuki Mito ,  Kazuya Takahata ,  Toshiya Okada ,  Toshio Ushiyama ,  Masahiro Sugimoto ,  Hirokazu Tsubouchi

IPC分类号： H01L39/00

CPC分类号： H01L39/14 ,  H01F6/06 ,  H01L39/2403 ,  H01L39/2409 ,  Y10T428/31678

摘要： Disclosed is a composite superconductor comprising a superconductor and a metal member. The metal member is composed of one or more members to be joined together in such manner that the one or more members cover the superconductor, and at least one member is made of aluminum or an aluminum alloy.

摘要翻译： 公开了一种包括超导体和金属构件的复合超导体。 金属构件由一个或多个构件组成，以使得一个或多个构件覆盖超导体的方式接合在一起，并且至少一个构件由铝或铝合金制成。

公开(公告)号：US09105795B2

公开(公告)日：2015-08-11

申请号：US12160964

申请日：2008-07-15

申请人： Toshiyuki Mito ,  Kazuya Takahata ,  Toshiya Okada ,  Toshio Ushiyama ,  Masahiro Sugimoto ,  Hirokazu Tsubouchi

发明人： Toshiyuki Mito ,  Kazuya Takahata ,  Toshiya Okada ,  Toshio Ushiyama ,  Masahiro Sugimoto ,  Hirokazu Tsubouchi

IPC分类号： H01F6/00 ,  H01L39/00 ,  H01L39/14 ,  H01F6/06 ,  H01L39/24

CPC分类号： H01L39/14 ,  H01F6/06 ,  H01L39/2403 ,  H01L39/2409 ,  Y10T428/31678

摘要： Disclosed is a composite superconductor comprising a superconductor and a metal member. The metal member is composed of one or more members to be joined together in such manner that the one or more members cover the superconductor, and at least one member is made of aluminum or an aluminum alloy.

摘要翻译： 公开了一种包括超导体和金属构件的复合超导体。 金属构件由一个或多个构件组成，以使得一个或多个构件覆盖超导体的方式接合在一起，并且至少一个构件由铝或铝合金制成。

公开(公告)号：US09024330B2

公开(公告)日：2015-05-05

申请号：US14141174

申请日：2013-12-26

申请人： Yukihiko Watanabe ,  Sachiko Aoi ,  Masahiro Sugimoto ,  Akitaka Soeno ,  Shinichiro Miyahara

发明人： Yukihiko Watanabe ,  Sachiko Aoi ,  Masahiro Sugimoto ,  Akitaka Soeno ,  Shinichiro Miyahara

IPC分类号： H01L29/47 ,  H01L29/45 ,  H01L29/16 ,  H01L21/285 ,  H01L29/78 ,  H01L21/04

CPC分类号： H01L29/47 ,  H01L21/0485 ,  H01L21/28518 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/78 ,  H01L29/7806 ,  H01L29/7813

摘要： A method of manufacturing a semiconductor device includes forming an ohmic electrode in a first area on one of main surfaces of a silicon carbide layer, siliciding the ohmic electrode, and forming a Schottky electrode in a second area on the one of the main surfaces of the silicon carbide layer with self alignment. The second area is exposed where the ohmic electrode is not formed.

摘要翻译： 一种制造半导体器件的方法包括：在碳化硅层的一个主表面上的第一区域中形成欧姆电极，将欧姆电极硅化，并在第二区域中形成肖特基电极 具有自对准的碳化硅层。 在没有形成欧姆电极的情况下暴露第二区域。

公开(公告)号：US08833902B2

公开(公告)日：2014-09-16

申请号：US12941914

申请日：2010-11-08

申请人： Takaya Sato ,  Yuji Kanome ,  Hiroyuki Tanaka ,  Yoshiaki Suzuki ,  Masahiro Sugimoto ,  Seiji Suzuki ,  Susumu Hirosawa ,  Takeaki Nakano

发明人： Takaya Sato ,  Yuji Kanome ,  Hiroyuki Tanaka ,  Yoshiaki Suzuki ,  Masahiro Sugimoto ,  Seiji Suzuki ,  Susumu Hirosawa ,  Takeaki Nakano

IPC分类号： B41J2/165

CPC分类号： B41J2/16585 ,  B41J2/16538

摘要： An apparatus includes a recording head having a sealing portion arranged in proximity to nozzle arrays and protruding beyond a nozzle surface. A wiper unit configured to wipe the nozzle surface of the recording head has a first wiper blade and a second wiper blade, and the first wiper blade is arranged to be inclined by an angle θ1 (θ1>0) with respect to a direction orthogonal to the wiping direction within a plane parallel to the nozzle surface, while the second wiper blade is arranged to be inclined by an angle θ2 (θ2

摘要翻译： 一种装置包括具有密封部分的记录头，该密封部分布置在喷嘴阵列附近并突出超过喷嘴表面。 被配置为擦拭记录头的喷嘴表面的刮水器单元具有第一刮水片和第二刮水片，并且第一刮水片布置成相对于第一刮板和倾斜角倾斜1; 在与喷嘴表面平行的平面内与擦拭方向正交的方向，而第二刮片设置成相对于与擦拭方向正交的方向倾斜角度θ; 2（＆amp; the; 2; 0） 飞机。

公开(公告)号：US08716121B2

公开(公告)日：2014-05-06

申请号：US13384850

申请日：2010-08-04

申请人： Akinori Seki ,  Masahiro Sugimoto ,  Akira Kawahashi ,  Yasuo Takahashi ,  Masakatsu Maeda

发明人： Akinori Seki ,  Masahiro Sugimoto ,  Akira Kawahashi ,  Yasuo Takahashi ,  Masakatsu Maeda

IPC分类号： H01L29/161 ,  H01L21/28 ,  H01L29/45

CPC分类号： H01L29/7802 ,  H01L21/0485 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/7395 ,  H01L29/78

摘要： An ohmic electrode for a p-type SiC semiconductor, and a method of forming the ohmic electrode. The ohmic electrode has an ohmic electrode layer, which has an amorphous structure and which is made of a Ti(1-x-y)Si(x)C(y) ternary film of which a composition ratio is within a composition range that is surrounded by two lines and two curves expressed by an expression x=0 (0.35≦y≦0.5), an expression y=−1.120x+0.5200 (0.1667≦x≦0.375), an expression y=1.778(x−0.375)2+0.1 (0≦x≦0.375) and an expression y=−2.504x2−0.5828x+0.5 (0≦x≦0.1667) and that excludes the line expressed by the expression x=0. The ohmic layer is directly laminated on a surface of a p-type SiC semiconductor.

摘要翻译： 用于p型SiC半导体的欧姆电极，以及形成欧姆电极的方法。 欧姆电极具有欧姆电极层，其具有非晶结构，并且由Ti（1-xy）Si（x）C（y）三元膜制成，其组成比在由 由表达式x = 0（0.35＆nlE; y＆nlE; 0.5）表示的两行和两条曲线，表达式y = -1.120x + 0.5200（0.1667＆nlE; x＆lt; lI; 0.375），表达式y = 1.778（x-0.375）2 +0.1（0＆nlE; x＆nlE; 0.375），并且表达式y = -2.504x2-0.5828x + 0.5（0＆nlE; x＆nlE; 0.1667），并且排除由表达式x = 0表示的行。 欧姆层直接层压在p型SiC半导体的表面上。

公开(公告)号：US08710586B2

公开(公告)日：2014-04-29

申请号：US13229892

申请日：2011-09-12

申请人： Toshimasa Yamamoto ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Jun Morimoto ,  Narumasa Soejima ,  Tsuyoshi Ishikawa ,  Yukihiko Watanabe

发明人： Toshimasa Yamamoto ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Jun Morimoto ,  Narumasa Soejima ,  Tsuyoshi Ishikawa ,  Yukihiko Watanabe

IPC分类号： H01L29/66 ,  H01L29/15

CPC分类号： H01L29/7813 ,  H01L29/086 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/45 ,  H01L29/66068

摘要： A SiC semiconductor device includes: a substrate, a drift layer, and a base region stacked in this order; first and second source regions and a contact layer in the base region; a trench penetrating the source and base regions; a gate electrode in the trench; an interlayer insulation film with a contact hole covering the gate electrode; a source electrode coupling with the source region and the contact layer via the contact hole; a drain electrode on the substrate; and a metal silicide film. The high concentration second source region is shallower than the low concentration first source region, and has a part covered with the interlayer insulation film, which includes a low concentration first portion near a surface and a high concentration second portion deeper than the first portion. The metal silicide film on the second part has a thickness larger than the first portion.

摘要翻译： SiC半导体器件包括：依次堆叠的衬底，漂移层和基极区域; 第一和第二源极区域和基极区域中的接触层; 穿透源区和基区的沟槽; 沟槽中的栅电极; 具有覆盖所述栅电极的接触孔的层间绝缘膜; 源极通过接触孔与源极区域和接触层耦合; 衬底上的漏电极; 和金属硅化物膜。 高浓度第二源区比低浓度第一源区浅，并且具有被层间绝缘膜覆盖的部分，其包括表面附近的低浓度第一部分和比第一部分更深的高浓度第二部分。 第二部分上的金属硅化物膜的厚度大于第一部分。

公开(公告)号：US08518809B2

公开(公告)日：2013-08-27

申请号：US13308721

申请日：2011-12-01

申请人： Hiroki Watanabe ,  Yasuo Kitou ,  Yasushi Furukawa ,  Kensaku Yamamoto ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

发明人： Hiroki Watanabe ,  Yasuo Kitou ,  Yasushi Furukawa ,  Kensaku Yamamoto ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

IPC分类号： H01L21/20

CPC分类号： H01L21/0262 ,  C30B25/186 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02529 ,  H01L21/02658 ,  H01L21/046 ,  H01L21/0475 ,  H01L29/04

摘要： A manufacturing method of an SiC single crystal includes preparing an SiC substrate, implanting ions into a surface portion of the SiC substrate to form an ion implantation layer, activating the ions implanted into the surface portion of the SiC substrate by annealing, chemically etching the surface portion of the SiC substrate to form an etch pit that is caused by a threading screw dislocation included in the SiC substrate and performing an epitaxial growth of SiC to form an SiC growth layer on a surface of the SiC substrate including an inner wall of the etch pit in such a manner that portions of the SiC growth layer grown on the inner wall of the etch pit join with each other.

摘要翻译： SiC单晶的制造方法包括制备SiC衬底，将离子注入到SiC衬底的表面部分中以形成离子注入层，通过退火激活注入到SiC衬底的表面部分中的离子，化学蚀刻表面 以形成由SiC衬底中的螺纹位错引起的蚀刻坑，并且在SiC衬底的表面上进行SiC的外延生长以形成SiC生长层，所述SiC生长层包括蚀刻的内壁 以使得在蚀刻坑的内壁上生长的SiC生长层的部分彼此连接的方式形成凹坑。

公开(公告)号：US20130116148A1

公开(公告)日：2013-05-09

申请号：US13805170

申请日：2011-05-17

申请人： Tomoyoshi Soga ,  Masahiro Sugimoto ,  Makoto Suematsu ,  Takafumi Saito ,  Sumio Kawata

发明人： Tomoyoshi Soga ,  Masahiro Sugimoto ,  Makoto Suematsu ,  Takafumi Saito ,  Sumio Kawata

IPC分类号： G01N33/68

CPC分类号： G01N33/576 ,  G01N33/5767 ,  G01N2800/085 ,  G01N2800/7009

摘要： Disclosed is a method for promptly identifying a liver disease. A normal person or a liver disease such as drug-induced liver injury, asymptomatic hepatitis B carrier, chronic hepatitis B, hepatitis C with persistently normal ALT, chronic hepatitis C, cirrhosis type C, hepatocellular carcinoma, simple steatosis, or non-alcoholic steatohepatitis is identified by measuring the concentration of a γ-Glu-X (wherein X represents an amino acid or an amine) peptide or the level of AST or ALT in blood and carrying out, for example, a multiple logistic regression based on the measured value.

摘要翻译： 公开了一种迅速鉴别肝脏疾病的方法。 正常人或肝脏疾病如药物诱导的肝损伤，无症状乙型肝炎携带者，慢性乙型肝炎，丙型肝炎持续ALT正常，慢性丙型肝炎，C型肝硬化，肝细胞癌，单纯脂肪变性或非酒精性脂肪性肝炎 通过测量γ-Glu-X（其中X表示氨基酸或胺）肽的浓度或血液中AST或ALT的水平进行鉴定，并且基于测量值进行多重逻辑回归 。