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公开(公告)号:US20140319121A1
公开(公告)日:2014-10-30
申请号:US14264410
申请日:2014-04-29
Applicant: Semes Co., Ltd.
Inventor: Hyung Joon KIM , Seung Kue KIM
IPC: H01L21/67
CPC classification number: H01L21/67109 , H01L21/67103
Abstract: Provided is a supporting unit supporting a substrate. The supporting unit includes a body including a plurality of heating regions and disposed with the substrate on a top surface thereof and a heating unit heating the body. Herein, the heating unit includes heating lines provided in the plurality of heating regions, respectively, to control temperatures of the plurality of heating regions independently from one another, terminals provided to the body and receiving power from the outside, and connecting lines connecting the heating lines to the terminals mutually corresponding to one another. Also, the terminals are disposed in one of the plurality of heating regions in a top view.
Abstract translation: 提供支撑基板的支撑单元。 支撑单元包括:主体,其包括多个加热区域,并且在其顶表面上设置有基板,加热单元加热主体。 这里,加热单元包括设置在多个加热区域中的加热管线,以分别彼此独立地控制多个加热区域的温度,设置到主体的端子和从外部接收电力,以及连接加热区域的连接线 到彼此相互对应的端子的线。 此外,端子在顶视图中设置在多个加热区域中的一个中。
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公开(公告)号:US20140060738A1
公开(公告)日:2014-03-06
申请号:US14012213
申请日:2013-08-28
Applicant: Semes Co., Ltd.
Inventor: Hyung Joon KIM , Jae Min ROH
IPC: H01J37/02
CPC classification number: H01J37/02 , H01J37/321 , H01J37/32119 , H01J37/32477 , H01J37/32495
Abstract: Provided is a substrate treating apparatus using plasma. A substrate treating apparatus includes a chamber having a treating space therein, a support member disposed in the chamber to support the substrate, a gas supply unit supplying a gas into the chamber, and a plasma source disposed on an upper portion of the camber, the plasma source including an antenna generating plasma from the gas supplied into the chamber, wherein the chamber includes a housing having an opened top surface, the housing having a treating space therein, and a dielectric substance assembly covering the opened top surface of the housing, and wherein the dielectric substance assembly includes a dielectric substance window and a reinforcement film having strength greater than that of the dielectric substance window.
Abstract translation: 提供了使用等离子体的基板处理装置。 基板处理装置包括其中具有处理空间的室,设置在室中以支撑基板的支撑构件,将气体供应到室中的气体供应单元和设置在外倾角上部的等离子体源, 等离子体源包括从供应到所述室中的气体产生等离子体的天线,其中所述室包括具有敞开的顶表面的壳体,所述壳体中具有处理空间,以及覆盖所述壳体的敞开的顶表面的介电物质组件,以及 其中所述介电物质组件包括电介质窗口和强度大于所述电介质窗口的强度的增强膜。
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公开(公告)号:US20140034240A1
公开(公告)日:2014-02-06
申请号:US13953009
申请日:2013-07-29
Applicant: Semes Co., Ltd.
Inventor: Hyung Joon KIM , Seung Pyo LEE , Hyung Je WOO
IPC: H01L21/02
CPC classification number: H01L21/02 , C23C16/4412 , H01J37/32633 , H01J37/32834
Abstract: Provided is a substrate treatment apparatus using plasma. The substrate treatment apparatus includes a housing having an inner space in which a substrate is treated, a support member disposed within the housing to support the substrate, a gas supply unit supplying a gas into the housing, a plasma source generating plasma from the gas supplied into the housing, and a baffle unit disposed to surround the support member within the housing, the baffle unit including a baffle in which through holes for exhausting the gas into the inner space of the housing are defined. The baffle is divided into a plurality of areas when viewed from an upper side, and each of portions of the plurality of areas is formed of a metallic material, and each of the other portions of the plurality of areas is formed of a nonmetallic material.
Abstract translation: 提供了使用等离子体的基板处理装置。 基板处理装置包括:具有内部空间的壳体,其中处理基板;支撑构件,其设置在壳体内以支撑基板;气体供应单元,将气体供应到壳体中;等离子体源,从提供的气体产生等离子体 以及设置成围绕壳体内的支撑构件设置的挡板单元,挡板单元包括挡板,其中限定用于将气体排出到壳体的内部空间中的通孔。 当从上侧观察时,挡板被分成多个区域,并且多个区域的每个部分由金属材料形成,并且多个区域中的每个区域由非金属材料形成。
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