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    Arithmetic device and electronic device
    12.
    发明授权
    Arithmetic device and electronic device 有权

    公开(公告)号：US12229661B2

    公开(公告)日：2025-02-18

    申请号：US18510784

    申请日：2023-11-16

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Takahiko Ishizu ,  Takayuki Ikeda ,  Atsuo Isobe ,  Atsushi Miyaguchi ,  Shunpei Yamazaki

    IPC: G06N3/065 ,  G06F1/3234 ,  G06F7/544 ,  G06T1/20

    Abstract: An arithmetic device and an electronic device having small power consumption is provided. An arithmetic device and an electronic device capable of high-speed operation is provided. An arithmetic device and an electronic device capable of suppressing heat generation is provided. The arithmetic device includes a first arithmetic portion and a second arithmetic portion. The first arithmetic portion includes a first CPU core and a second CPU core. The second arithmetic portion includes a first GPU core and a second GPU core. The CPU cores each have a power gating function and each include a first data retention circuit electrically connected to a flip-flop. The first GPU core includes a second data retention circuit capable of retaining an analog value and reading out the analog value as digital data of two or more bits. The second GPU core includes a third data retention circuit capable of retaining a digital value and reading out the digital value as digital data of one bit. The first to third data retention circuits each include a transistor including an oxide semiconductor and a capacitor.

    Oxide semiconductor device
    13.
    发明授权
    Oxide semiconductor device 有权

    公开(公告)号：US12224293B2

    公开(公告)日：2025-02-11

    申请号：US18399990

    申请日：2023-12-29

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei Yamazaki ,  Yuichi Sato ,  Hitoshi Nakayama

    IPC: H01L27/13 ,  H01L27/12 ,  H01L29/24 ,  H10B12/00

    Abstract: A semiconductor device including: a first insulator in which an opening is formed; a first conductor positioned in the opening; a first oxide over the first insulator; a second oxide over the first oxide; a third oxide and a fourth oxide over the second oxide; a second conductor over the third oxide and the first conductor; a third conductor over the fourth oxide; a fifth oxide over the second oxide; a second insulator over the fifth oxide; and a fourth conductor positioned over the second insulator and overlapping with the fifth oxide. The fifth oxide is in contact with each of a side surface of the third oxide and a side surface of the fourth oxide. The conductivity of the third oxide is higher than the conductivity of the second oxide. The second conductor is in contact with the top surface of the first conductor.

    Functional panel, display device, input/output device, and data processing device
    15.
    发明授权
    Functional panel, display device, input/output device, and data processing device 有权

    公开(公告)号：US12205979B2

    公开(公告)日：2025-01-21

    申请号：US18236029

    申请日：2023-08-21

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei Yamazaki ,  Takayuki Ikeda

    IPC: H01L27/15 ,  G06F3/01 ,  G06F3/041 ,  G09G3/32 ,  H01L25/18 ,  G06F3/02 ,  G06F3/16

    Abstract: A novel functional panel that is highly convenient or highly reliable is provided. The functional panel includes a first pixel. The first pixel includes a first element, a color conversion layer, and a first functional layer. The first functional layer is positioned between the first element and the color conversion layer. The first element has a function of emitting light and contains gallium nitride. The color conversion layer has a function of converting the color of light emitted from the first element into a different color. The first functional layer includes a first insulating film and a pixel circuit. The first insulating film includes a region positioned between the pixel circuit and the first element, and has an opening. The pixel circuit includes a first transistor. The first transistor includes a first oxide semiconductor film and is electrically connected to the first element through the opening.

    Semiconductor device
    16.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US12205892B2

    公开(公告)日：2025-01-21

    申请号：US17297863

    申请日：2019-11-20

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Akio Suzuki ,  Atsushi Miyaguchi ,  Shunpei Yamazaki

    IPC: H01L23/528 ,  H01L23/31 ,  H01L23/367 ,  H01L29/786

    Abstract: A semiconductor device having a novel structure is provided. The semiconductor device includes a silicon substrate and a device provided above the silicon substrate. The device includes a transistor and a conductor. The transistor includes a metal oxide in a channel formation region. Conductivity is imparted to the silicon substrate. The conductor is electrically connected to each of a drain of the transistor and the silicon substrate through an opening provided in the device. Heat of the drain of the transistor can be efficiently released through the silicon substrate.

    Transistor and semiconductor device
    17.
    发明授权
    Transistor and semiconductor device 有权

    公开(公告)号：US12199187B2

    公开(公告)日：2025-01-14

    申请号：US18422049

    申请日：2024-01-25

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei Yamazaki ,  Masayuki Sakakura

    IPC: H01L29/10 ,  H01L27/06 ,  H01L27/092 ,  H01L27/12 ,  H01L29/04 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L21/8238

    Abstract: A transistor with small parasitic capacitance can be provided. A transistor with high frequency characteristics can be provided. A semiconductor device including the transistor can be provided. Provided is a transistor including an oxide semiconductor, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator. The first conductor has a first region where the first conductor overlaps with the oxide semiconductor with the first insulator positioned therebetween; a second region where the first conductor overlaps with the second conductor with the first and second insulators positioned therebetween; and a third region where the first conductor overlaps with the third conductor with the first and second insulators positioned therebetween. The oxide semiconductor including a fourth region where the oxide semiconductor is in contact with the second conductor; and a fifth region where the oxide semiconductor is in contact with the third conductor.

    Semiconductor device and method for manufacturing semiconductor device
    19.
    发明授权
    Semiconductor device and method for manufacturing semiconductor device 有权

    公开(公告)号：US12176439B2

    公开(公告)日：2024-12-24

    申请号：US17428753

    申请日：2020-02-13

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei Yamazaki ,  Erika Takahashi ,  Tsutomu Murakawa ,  Shinya Sasagawa ,  Katsuaki Tochibayashi

    IPC: H01L29/786 ,  H01L29/04 ,  H01L29/66

    Abstract: A semiconductor device with small fluctuations in transistor characteristics can be provided. The semiconductor device includes a first oxide, a second oxide and a third oxide over the first oxide, a first conductor over the second oxide, a second conductor over the third oxide, a fourth oxide over the first oxide and between the second oxide and the third oxide, a first insulator over the fourth oxide, and a third conductor over the first insulator. The first oxide includes a groove in a region not overlapping with the second oxide and the third oxide. The first oxide includes a first layered crystal substantially parallel to the surface where the first oxide is formed. In the groove, the fourth oxide includes a second layered crystal substantially parallel to the surface where the first oxide is formed. A concentration of aluminum atoms at an interface between the first oxide and the fourth oxide and in the vicinity of the interface is less than or equal to 5.0 atomic %.

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