公开(公告)号：US12199187B2

公开(公告)日：2025-01-14

申请号：US18422049

申请日：2024-01-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Masayuki Sakakura

IPC: H01L29/10 ,  H01L27/06 ,  H01L27/092 ,  H01L27/12 ,  H01L29/04 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L21/8238

Abstract: A transistor with small parasitic capacitance can be provided. A transistor with high frequency characteristics can be provided. A semiconductor device including the transistor can be provided. Provided is a transistor including an oxide semiconductor, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator. The first conductor has a first region where the first conductor overlaps with the oxide semiconductor with the first insulator positioned therebetween; a second region where the first conductor overlaps with the second conductor with the first and second insulators positioned therebetween; and a third region where the first conductor overlaps with the third conductor with the first and second insulators positioned therebetween. The oxide semiconductor including a fourth region where the oxide semiconductor is in contact with the second conductor; and a fifth region where the oxide semiconductor is in contact with the third conductor.

公开(公告)号：US11923206B2

公开(公告)日：2024-03-05

申请号：US17989861

申请日：2022-11-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Masayuki Sakakura ,  Yoshiaki Oikawa

IPC: H01L27/12 ,  G02F1/1333 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/477 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L21/477 ,  G02F1/133345 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1259 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

公开(公告)号：US11626521B2

公开(公告)日：2023-04-11

申请号：US17083485

申请日：2020-10-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32 ,  H01L51/52 ,  H01L29/24

Abstract: An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.

公开(公告)号：US11081505B2

公开(公告)日：2021-08-03

申请号：US17029098

申请日：2020-09-23

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masayuki Sakakura ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/20 ,  G09G3/36 ,  H01L27/02 ,  G02F1/1333 ,  G02F1/1339 ,  G02F1/1343

Abstract: An insulating film provided between adjacent pixels is referred to as a bank, a partition, a barrier, an embankment or the like, and is provided above a source wiring or a drain wiring for a thin film transistor, or a power supply line. In particular, at an intersection portion of these wirings provided in different layers, a larger step is formed there than in other portions. Even when the insulating film provided between adjacent pixels is formed by a coating method, thin portions are problematically partially formed due to this step and the withstand pressure is reduced. In the present invention, a dummy material is arranged near the large step portion, particularly, around the intersection portion of wirings, so as to alleviate unevenness formed thereover. The upper wiring and the lower wiring are arranged in a misaligned manner so as not to align the end portions.

公开(公告)号：US10916566B2

公开(公告)日：2021-02-09

申请号：US16674161

申请日：2019-11-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masayuki Sakakura

IPC: H01L27/12 ,  H01L21/02 ,  H01L29/786 ,  H01L33/42 ,  H01L29/66

Abstract: It is an object to manufacture and provide a highly reliable display device including a thin film transistor with a high aperture ratio which has stable electric characteristics. In a manufacturing method of a semiconductor device having a thin film transistor in which a semiconductor layer including a channel formation region is formed using an oxide semiconductor film, a heat treatment for reducing moisture and the like which are impurities and for improving the purity of the oxide semiconductor film (a heat treatment for dehydration or dehydrogenation) is performed. Further, an aperture ratio is improved by forming a gate electrode layer, a source electrode layer, and a drain electrode layer using conductive films having light transmitting properties.

公开(公告)号：US20200343277A1

公开(公告)日：2020-10-29

申请号：US16927513

申请日：2020-07-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kiyoshi Kato ,  Masayuki Sakakura

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/108

Abstract: A semiconductor device that is suitable for miniaturization and higher density is provided. A semiconductor device includes a first transistor over a semiconductor substrate, a second transistor including an oxide semiconductor over the first transistor, and a capacitor over the second transistor. The capacitor includes a first conductor, a second conductor, and an insulator. The second conductor covers a side surface of the first conductor with an insulator provided therebetween.

公开(公告)号：US10720532B2

公开(公告)日：2020-07-21

申请号：US16558601

申请日：2019-09-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masayuki Sakakura ,  Hideomi Suzawa

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/24 ,  H01L29/04 ,  H01L27/146 ,  H01L27/105 ,  H01L27/12 ,  H01L29/78

Abstract: A semiconductor device having a structure which can prevent a decrease in electrical characteristics due to miniaturization is provided. The semiconductor device includes, over an insulating surface, a stack in which a first oxide semiconductor layer and a second oxide semiconductor layer are sequentially formed, and a third oxide semiconductor layer covering part of a surface of the stack. The third oxide semiconductor layer includes a first layer in contact with the stack and a second layer over the first layer. The first layer includes a microcrystalline layer, and the second layer includes a crystalline layer in which c-axes are aligned in a direction perpendicular to a surface of the first layer.

公开(公告)号：US20200185534A1

公开(公告)日：2020-06-11

申请号：US16794694

申请日：2020-02-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinari Higaki ,  Masayuki Sakakura ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/45 ,  H01L29/49 ,  H01L29/417

Abstract: It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger. The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than the upper layer. A first conductive layer is formed with Ti or Mo, and a second conductive layer is formed with aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO.

公开(公告)号：US10679017B2

公开(公告)日：2020-06-09

申请号：US15567091

申请日：2016-04-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Tomokazu Yokoi ,  Masayuki Sakakura

IPC: G06K19/07 ,  G06K7/01 ,  B42D25/313 ,  H01L21/822 ,  G06K19/073 ,  H01L21/8234 ,  B42D25/305 ,  G06F21/32 ,  G06F21/72 ,  G06K19/077 ,  B42D25/29 ,  G06K9/00 ,  H01L29/786 ,  H01L27/12 ,  H01L27/088 ,  H01L27/06 ,  H01L21/8258

Abstract: To provide an authentication system and a semiconductor device utilizing the system.The semiconductor device includes a transmission/reception circuit, a control circuit, an analog-to-digital converter circuit, a memory device, and a fingerprint sensor. At least one of the control circuit, the analog-to-digital converter circuit, and the memory device includes a transistor including an oxide semiconductor in a channel formation region. The control circuit has a function of receiving an instruction signal from the outside of the semiconductor device through the transmission/reception circuit. The memory device has fingerprint data for comparison and confidential information. The control circuit has a function of comparing fingerprint data to be compared which is obtained by the fingerprint sensor and the fingerprint data for comparison. The control circuit has a function of transmitting the confidential information to the outside of the semiconductor device through the transmission/reception circuit when the fingerprint data to be compared and the fingerprint data for comparison match each other.

公开(公告)号：US10516010B2

公开(公告)日：2019-12-24

申请号：US14333078

申请日：2014-07-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Satoshi Murakami ,  Masayuki Sakakura ,  Toru Takayama

IPC: H01L27/15 ,  H01L29/267 ,  H01L31/12 ,  H01L27/32 ,  H01L29/66 ,  H01L29/786 ,  H01L29/16 ,  H01L27/12 ,  H01L51/50 ,  H01L51/56 ,  H01L51/52

Abstract: The light-emitting apparatus comprising thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer on the upper and side surfaces of the second organic insulation layer and having an opening over the anode, an organic compound layer in contact with the anode and the fourth inorganic insulation layer and containing light-emitting material, and a cathode in contact with the organic compound layer, wherein the third and the fourth inorganic insulation layers comprise silicon nitride or aluminum nitride.