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公开(公告)号：US10741590B2
公开(公告)日：2020-08-11
申请号：US16087811
申请日：2017-04-03
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Masataka Sato , Masakatsu Ohno , Seiji Yasumoto , Hiroki Adachi
Abstract: A peeling method at low cost with high mass productivity is provided. A silicon layer having a function of releasing hydrogen by irradiation with light is formed over a formation substrate, a first layer is formed using a photosensitive material over the silicon layer, an opening is formed in a portion of the first layer that overlaps with the silicon layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the silicon layer, the silicon layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.
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公开(公告)号：US10475820B2
公开(公告)日：2019-11-12
申请号：US16143970
申请日：2018-09-27
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Junpei Yanaka , Kayo Kumakura , Masataka Sato , Satoru Idojiri , Kensuke Yoshizumi , Mari Tateishi , Natsuko Takase
Abstract: To provide a peeling method that achieves low cost and high mass productivity. The peeling method includes the steps of: forming a first layer with a photosensitive material over a formation substrate; forming a first region and a second region having a smaller thickness than the first region in the first layer by photolithography to form a resin layer having the first region and the second region; forming a transistor including an oxide semiconductor in a channel formation region over the first region in the resin layer; forming a conductive layer over the second region in the resin layer; and irradiating the resin layer with laser light to separate the transistor and the formation substrate.
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公开(公告)号：US10388875B2
公开(公告)日：2019-08-20
申请号：US15728575
申请日：2017-10-10
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Seiji Yasumoto , Masataka Sato , Masafumi Nomura , Toshiyuki Miyamoto
Abstract: A method for manufacturing a flexible semiconductor device is disclosed. The method includes: forming a separation layer of a metal over a substrate; treating the separation layer with plasma under an atmosphere containing nitrogen, oxygen, silicon, and hydrogen; forming a layer over the plasma-treated separation layer, the layer being capable of supplying hydrogen and nitrogen to the separation layer; forming a functional layer over the separation layer; performing heat treatment to promote the release of hydrogen and nitrogen from the layer; and separating the substrate at the separation layer. The method allows the formation of an extremely thin oxide layer over the separation layer, which facilitates the separation, reduces the probability that the oxide layer remains under the layer, and contributes to the increase in efficiency of a device included in the functional layer.
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公开(公告)号：US10181424B2
公开(公告)日：2019-01-15
申请号：US15477528
申请日：2017-04-03
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Masataka Sato , Masakatsu Ohno , Seiji Yasumoto , Hiroki Adachi
IPC: H01L21/00 , H01L21/78 , H01L21/02 , H01L21/47 , H01L21/84 , H01L21/683 , H01L27/12 , H01L29/786 , H01L27/32 , H01L51/00
Abstract: A peeling method at low cost with high mass productivity is provided. An oxide layer is formed over a formation substrate, a first layer is formed over the oxide layer using a photosensitive material, an opening is formed in a portion of the first layer that overlaps with the oxide layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the oxide layer, the oxide layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.
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公开(公告)号：US09799829B2
公开(公告)日：2017-10-24
申请号：US14801331
申请日：2015-07-16
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Seiji Yasumoto , Masataka Sato , Masafumi Nomura , Toshiyuki Miyamoto
IPC: H01L51/00
CPC classification number: H01L51/003 , H01L2251/5338
Abstract: A method for manufacturing a flexible semiconductor device is disclosed. The method includes: forming a separation layer of a metal over a substrate; treating the separation layer with plasma under an atmosphere containing nitrogen, oxygen, silicon, and hydrogen; forming a layer over the plasma-treated separation layer, the layer being capable of supplying hydrogen and nitrogen to the separation layer; forming a functional layer over the separation layer; performing heat treatment to promote the release of hydrogen and nitrogen from the layer; and separating the substrate at the separation layer. The method allows the formation of an extremely thin oxide layer over the separation layer, which facilitates the separation, reduces the probability that the oxide layer remains under the layer, and contributes to the increase in efficiency of a device included in the functional layer.
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Patent Agency Ranking
16.发明授权公开(公告)号：US10345668B2
公开(公告)日：2019-07-09
申请号：US15987952
申请日：2018-05-24
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Masataka Nakada , Masahiro Katayama , Seiji Yasumoto , Hiroki Adachi , Masataka Sato , Koji Kusunoki , Yoshiharu Hirakata
IPC: G02F1/1333 , G06F3/041 , G02F1/1362 , H01L27/12
Abstract: Provided is a novel display panel that is highly convenient or highly reliable, a novel input/output device that is highly convenient or highly reliable, or a method for manufacturing a novel display panel that is highly convenient or highly reliable. The present inventors conceived a structure including a first intermediate film, a first electrode including a region in contact with the first intermediate film, a pixel that includes a first display element including the first electrode and a pixel circuit electrically connected to the first display element, a signal line electrically connected to the pixel, and a terminal that includes a third conductive film electrically connected to the signal line and a second intermediate film including a region in contact with the third conductive film.
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公开(公告)号：US09947568B2
公开(公告)日：2018-04-17
申请号：US14182834
申请日：2014-02-18
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Seiji Yasumoto , Masataka Sato , Shingo Eguchi , Kunihiko Suzuki
CPC classification number: H01L21/6836 , B32B38/10 , H01L21/67132 , H01L21/6835 , H01L51/003 , H01L51/0097 , H01L51/50 , H01L2221/68318 , H01L2221/6835 , H01L2221/68363 , H01L2221/68381 , H01L2221/68386 , Y10T156/1712
Abstract: To improve peelability, yield in a peeling step, and yield in manufacturing a flexible device. A peeling method is employed which includes a first step of forming a peeling layer containing tungsten over a support substrate; a second step of forming, over the peeling layer, a layer to be peeled formed of a stack including a first layer containing silicon oxynitride and a second layer containing silicon nitride in this order and forming an oxide layer containing tungsten oxide between the peeling layer and the layer to be peeled; a third step of forming a compound containing tungsten and nitrogen in the oxide layer by heat treatment; and a fourth step of peeling the peeling layer from the layer to be peeled at the oxide layer.
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公开(公告)号：US09937698B2
公开(公告)日：2018-04-10
申请号：US14532634
申请日：2014-11-04
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Seiji Yasumoto , Masataka Sato , Tomoya Aoyama , Ryu Komatsu
CPC classification number: B32B43/006 , B32B38/10 , B32B2309/105 , B32B2315/08 , B32B2457/00 , H01L21/68757 , H01L27/3244 , H01L51/003 , H01L51/0097 , H01L51/5237 , H01L51/5262 , H01L2221/68386 , H01L2251/5338 , Y10T156/11 , Y10T156/1142 , Y10T156/1168 , Y10T156/1184 , Y10T156/1967 , Y10T156/1978
Abstract: The yield of a peeling process is improved. A first step of forming a peeling layer to a thickness of greater than or equal to 0.1 nm and less than 10 nm over a substrate; a second step of forming, on the peeling layer, a layer to be peeled including a first layer in contact with the peeling layer; a third step of separating parts of the peeling layer and parts of the first layer to form a peeling trigger; and a fourth step of separating the peeling layer and the layer to be peeled are performed. The use of the thin peeling layer can improve the yield of a peeling process regardless of the structure of the layer to be peeled.
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19.发明授权公开(公告)号：US11672152B2
公开(公告)日：2023-06-06
申请号：US16766886
申请日：2018-11-19
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Daiki Nakamura , Shingo Eguchi , Tomoya Aoyama , Nozomu Sugisawa , Junya Maruyama , Kazuhiko Fujita , Masataka Sato , Susumu Kawashima
CPC classification number: H01L27/3218 , G06F1/1624 , G06F1/1652 , G06F1/1681 , H01L27/3216 , H01L27/3276 , H01L51/0097 , H01L51/5048 , H01L51/5056 , H01L51/5072 , H01L51/5088 , H01L51/5092 , H01L51/5096 , H01L51/5212 , H01L51/5218 , H01L51/5253 , H01L51/5271
Abstract: Display unevenness in a display panel is suppressed. A display panel with a high aperture ratio of a pixel is provided. The display panel includes a first pixel electrode, a second pixel electrode, a third pixel electrode, a first light-emitting layer, a second light-emitting layer, a third light-emitting layer, a first common layer, a second common layer, a common electrode, and an auxiliary wiring. The first common layer is positioned over the first pixel electrode and the second pixel electrode. The first common layer has a portion overlapping with the first light-emitting layer and a portion overlapping with the second light-emitting layer. The second common layer is positioned over the third pixel electrode. The second common layer has a portion overlapping with the third light-emitting layer. The common electrode has a portion overlapping with the first pixel electrode with the first common layer and the first light-emitting layer provided therebetween, a portion overlapping with the second pixel electrode with the first common layer and the second light-emitting layer provided therebetween, a portion overlapping with the third pixel electrode with the second common layer and the third light-emitting layer provided therebetween, and a portion in contact with a top surface of the auxiliary wiring.
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公开(公告)号：US11574937B2
公开(公告)日：2023-02-07
申请号：US16983394
申请日：2020-08-03
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Masataka Sato , Masakatsu Ohno , Seiji Yasumoto , Hiroki Adachi
Abstract: A peeling method at low cost with high mass productivity is provided. A silicon layer having a function of releasing hydrogen by irradiation with light is formed over a formation substrate, a first layer is formed using a photosensitive material over the silicon layer, an opening is formed in a portion of the first layer that overlaps with the silicon layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the silicon layer, the silicon layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.
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