公开(公告)号：US10372274B2

公开(公告)日：2019-08-06

申请号：US15091295

申请日：2016-04-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hajime Kimura ,  Masami Jintyou ,  Yasuharu Hosaka ,  Naoto Goto ,  Takahiro Iguchi ,  Daisuke Kurosaki ,  Junichi Koezuka

IPC: G06F3/044 ,  H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L27/32 ,  G06F3/041 ,  H01L29/66

Abstract: A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.

公开(公告)号：US10147780B2

公开(公告)日：2018-12-04

申请号：US15290085

申请日：2016-10-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daiki Nakamura ,  Kohei Yokoyama ,  Yasuhiro Jinbo ,  Toshiki Sasaki ,  Masataka Nakada ,  Naoto Goto ,  Takahiro Iguchi

IPC: H01L27/32 ,  H01L29/786 ,  G02F1/1343 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1368 ,  H01L27/12

Abstract: A novel display device that is highly convenient with low power consumption is provided. The display device includes a display element including a liquid crystal layer, a display element including a light-emitting layer, and a pixel circuit. Electrodes of the display element including the liquid crystal layer and the display element including the light-emitting layer are electrically connected to the pixel circuit. The electrode of the display element including the liquid crystal layer includes a reflective film including an opening. The pixel circuit includes a transistor including a semiconductor film. The number of insulating films in a region overlapping with the opening is smaller than that of insulating films overlapping with the semiconductor film. In addition, the display element including the light-emitting layer includes two light-emitting elements. The number of optical elements overlapping with one light-emitting element is smaller than that of optical elements overlapping with the other light-emitting element.

公开(公告)号：US11054687B2

公开(公告)日：2021-07-06

申请号：US16319649

申请日：2017-05-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masakatsu Ohno ,  Seiji Yasumoto ,  Naoto Goto ,  Hiroki Adachi

IPC: G02F1/136 ,  G02F1/1333 ,  G02F1/1362 ,  G02F1/1368

Abstract: A method for manufacturing a display device with low power consumption is provided.
A method for manufacturing a display device includes a step of forming a first layer over a substrate by using a material containing a resin or a resin precursor, a step of forming a first region and a second region thinner than the first region in the first layer, a step of forming a first resin layer including a first region and a second region thinner than the first region by performing first heat treatment on the first layer in a gas containing oxygen, a step of forming, over the first resin layer, a layer to be separated including a display element, and a step of separating the layer to be separated and the substrate from each other. A step of forming a conductive layer over the first resin layer in a position overlapping with the second region is included in the step of forming the layer to be separated. A step of exposing the conductive layer by removing the first resin layer is included after the step of separating the layer to be separated and the substrate from each other.

公开(公告)号：US10304919B2

公开(公告)日：2019-05-28

申请号：US15966640

申请日：2018-04-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuhiro Jinbo ,  Kohei Yokoyama ,  Yuki Tamatsukuri ,  Naoto Goto ,  Masami Jintyou ,  Masayoshi Dobashi ,  Masataka Nakada ,  Akihiro Chida ,  Naoyuki Senda

IPC: H01L27/32 ,  H01L51/52

Abstract: To provide a display device with a manufacturing yield and/or a display device with suppressed mixture of colors between adjacent pixels. The display device includes a first pixel electrode, a second pixel electrode, a first insulating layer, a second insulating layer, and an adhesive layer. The first insulating layer includes a first opening. The second insulating layer includes a second opening. The first opening and the second opening are provided between the first pixel electrode and the second pixel electrode. In a top view, a periphery of the second opening is positioned on an inner side than a periphery of the first opening. The adhesive layer has a region overlapping with the second insulating layer below the second insulating layer.

公开(公告)号：US09917116B2

公开(公告)日：2018-03-13

申请号：US15601330

申请日：2017-05-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daisuke Kubota ,  Ryo Hatsumi ,  Masami Jintyou ,  Takumi Shigenobu ,  Naoto Goto

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/786 ,  H01L29/45 ,  H01L49/02 ,  G02F1/133 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  G06F3/041 ,  G06F3/044 ,  H01L29/24

CPC classification number: H01L27/1255 ,  G02F1/13306 ,  G02F1/133305 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/133512 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/1343 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13415 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04108 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/127 ,  H01L28/60 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.

公开(公告)号：US09177969B2

公开(公告)日：2015-11-03

申请号：US14656285

申请日：2015-03-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daisuke Kubota ,  Ryo Hatsumi ,  Masami Jintyou ,  Takumi Shigenobu ,  Naoto Goto

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/417 ,  H01L29/786 ,  H01L29/45

CPC classification number: H01L27/1255 ,  G02F1/13306 ,  G02F1/133305 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/133512 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/1343 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13415 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04108 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/127 ,  H01L28/60 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.