公开(公告)号：US07960076B2

公开(公告)日：2011-06-14

申请号：US12329126

申请日：2008-12-05

申请人： Takashi Kamo ,  Osamu Suga ,  Toshihiko Tanaka

发明人： Takashi Kamo ,  Osamu Suga ,  Toshihiko Tanaka

IPC分类号： G03F1/00

CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/58

摘要： A reflective-type mask having a main surface including a pattern region in the main surface, the pattern region including a multilayer reflective film which reflects the exposure light and a first absorber pattern on the multilayer reflective film, the first absorber pattern including a pattern which absorbs the exposure light and corresponds to a pattern to be formed on a wafer, a light shielding region in the main surface for preventing a region on the wafer excluding a predetermined region from being irradiated with the exposure light when the main surface is irradiated with the exposure light for transferring the first absorber pattern to the predetermined region, the light shielding region including a second absorber pattern having a lower reflectivity to the exposure light than the first absorber pattern and being provided in a position differing from a position in which the first absorber pattern is provided.

摘要翻译： 一种反射型掩模，其具有包括主表面中的图案区域的主表面，所述图案区域包括反射所述曝光光的多层反射膜和所述多层反射膜上的第一吸收体图案，所述第一吸收体图案包括图案， 吸收曝光光并且对应于要在晶片上形成的图案，主表面上的遮光区域，用于防止当主表面被照射时，除了预定区域之外的晶片上的区域被照射曝光 用于将第一吸收体图案转印到预定区域的曝光光，所述遮光区域包括与所述第一吸收体图案相比对所述曝光光具有较低反射率的第二吸收体图案，并且设置在与所述第一吸收体 提供图案。

公开(公告)号：US20060206853A1

公开(公告)日：2006-09-14

申请号：US11360688

申请日：2006-02-24

申请人： Takashi Kamo ,  Osamu Ikenaga ,  Tomohiro Tsutsui

发明人： Takashi Kamo ,  Osamu Ikenaga ,  Tomohiro Tsutsui

IPC分类号： G06F17/50 ,  G06K9/00

CPC分类号： G03F1/84 ,  G03F1/36

摘要： There is disclosed a method of producing mask inspection data, including preparing design data of a semiconductor device preparing a lithography condition relevant to a lithography process for transferring a mask pattern formed on a photo mask onto a wafer, preparing a wafer processing condition relevant to wafer processing using a pattern transferred onto the wafer, preparing a first proximity correction model for correcting proximity effect relevant to the lithography condition and the wafer processing condition, generating mask pattern data based on the design data and the first proximity correction model, and generating mask inspection data corresponding to the mask pattern data.

摘要翻译： 公开了一种制造掩模检查数据的方法，包括准备准备与光刻工艺相关的光刻条件的半导体器件的设计数据，用于将形成在光掩模上的掩模图案转印到晶片上，制备与晶片相关的晶片处理条件 使用转移到晶片上的图案进行处理，准备用于校正与光刻条件和晶片处理条件相关的邻近效应的第一接近校正模型，基于设计数据和第一邻近校正模型生成掩模图案数据，以及生成掩模检查 对应于掩模图案数据的数据。

公开(公告)号：US5728494A

公开(公告)日：1998-03-17

申请号：US730017

申请日：1996-10-11

申请人： Kenji Kawano ,  Shinichi Ito ,  Iwao Higashikawa ,  Masamitsu Itoh ,  Takashi Kamo ,  Hiroaki Hazama ,  Takayuki Iwamatsu

发明人： Kenji Kawano ,  Shinichi Ito ,  Iwao Higashikawa ,  Masamitsu Itoh ,  Takashi Kamo ,  Hiroaki Hazama ,  Takayuki Iwamatsu

IPC分类号： G03F1/32 ,  G03F1/68 ,  G03F9/00

CPC分类号： G03F1/32 ,  G03F1/68

摘要： This invention provides an exposure mask including a translucent film formed on a light-transmitting substrate and having a mask pattern, and a stabilized region formed in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film to prevent variations in physical properties of the translucent film. In addition, this invention provides a method of manufacturing an exposure mask, including the steps of forming a translucent film on a light-transmitting substrate, forming a photosensitive resin film on the translucent film, forming a photosensitive resin pattern by exposing the photosensitive resin film to a radiation or a charged particle beam, removing an exposed portion of the translucent film by using the photosensitive resin pattern as a mask, removing the photosensitive resin pattern, and forming a stabilized region in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film before the step of forming the photo-sensitive resin film or after the step of forming the photosensitive resin pattern. Also, this invention provides an apparatus for manufacturing an exposure mask.

摘要翻译： 本发明提供一种曝光掩模，其包括形成在透光基板上并具有掩模图案的半透明膜，以及形成在透光基板和半透膜之间的边界中的至少半透明的表面的稳定区域 膜以防止半透明膜的物理性质的变化。 此外，本发明提供一种制造曝光掩模的方法，包括以下步骤：在透光性基板上形成半透膜，在半透膜上形成感光性树脂膜，通过使感光性树脂膜曝光，形成感光性树脂图案 通过使用感光性树脂图案作为掩模去除透光性膜的露出部分，除去感光性树脂图案，在透光性基板与透光性的界面之间形成稳定区域 或在形成感光树脂膜的步骤之前或在形成感光性树脂图案的步骤之后，至少在半透明膜的表面上。 此外，本发明提供了一种用于制造曝光掩模的装置。

公开(公告)号：US08603707B2

公开(公告)日：2013-12-10

申请号：US13422530

申请日：2012-03-16

申请人： Takashi Kamo

发明人： Takashi Kamo

IPC分类号： G03F1/72 ,  G03F1/24

CPC分类号： G03F1/72 ,  G03F1/24 ,  G03F7/2026 ,  G03F7/70466

摘要： According to one embodiment, an exposure method comprises exposing a desired pattern on a sample by use of a first reflection type mask on which the desired pattern to be exposed on the sample is formed and a defect is partially formed, and exposing a correction pattern on the sample by use of a second reflection type mask having the correction pattern of a reflection film formed at a position corresponding to the defect of the first reflection type mask.

摘要翻译： 根据一个实施例，一种曝光方法包括通过使用第一反射型掩模将样品上的期望图案曝光，在其上形成要在样品上曝光的期望图案并部分地形成缺陷，并将校正图案曝光 使用具有形成在与第一反射型掩模的缺陷相对应的位置处的反射膜的校正图案的第二反射型掩模的样品。

公开(公告)号：US08535854B2

公开(公告)日：2013-09-17

申请号：US12972804

申请日：2010-12-20

申请人： Takashi Kamo

发明人： Takashi Kamo

IPC分类号： G03F1/24

CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/82 ,  G03F1/84

摘要： According to one embodiment, a reflective exposure mask comprises a first layer formed on a substrate and including a first light absorbing part which absorbs exposure light and a light reflecting part which reflects the exposure light, and a second layer formed on the light reflecting part and including a second light absorbing part which absorbs the exposure light.

摘要翻译： 根据一个实施例，反射曝光掩模包括形成在基板上并包括吸收曝光光的第一光吸收部分和反射曝光光的光反射部分的第一层和形成在光反射部分上的第二层， 包括吸收曝光光的第二光吸收部。

公开(公告)号：US20110020737A1

公开(公告)日：2011-01-27

申请号：US12749250

申请日：2010-03-29

申请人： Takashi Kamo ,  Osamu Suga

发明人： Takashi Kamo ,  Osamu Suga

IPC分类号： G03F1/00 ,  G03F7/20

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F1/26 ,  G03F7/70283

摘要： A reflection-type exposure mask includes a multilayer reflective film in a main surface and serving as a high reflective region to an exposure light, and an absorber pattern on the multilayer reflective film and serving as a low reflective region to the exposure light, wherein a phase difference between reflection lights of the exposure light from the multilayer reflective film and the absorber pattern is in a range of 180°±10°, and the absorber pattern includes first and second linear patterns having longitudinal directions intersecting at right angles, contrast values of optical images of the first and second linear patterns formed on a wafer is to be 0.6 or more when one of the longitudinal directions of the first and second patterns agree with an incident direction of the exposure light to the main surface viewed from above the main surface.

摘要翻译： 反射型曝光掩模包括主表面中的多层反射膜并且用作曝光用光的高反射区域，并且在多层反射膜上形成作为曝光用光的低反射区域的吸收体图案，其中， 来自多层反射膜的曝光光的反射光和吸收体图案之间的相位差在180°±10°的范围内，吸收体图案包括纵向相交成直角的第一和第二线状图案，对比度值 形成在晶片上的第一和第二线状图案的光学图像在第一和第二图案的纵向方向之一与主表面上方观察到的曝光的入射方向一致时为0.6以上 。

公开(公告)号：US5629115A

公开(公告)日：1997-05-13

申请号：US583857

申请日：1996-01-11

申请人： Kenji Kawano ,  Shinichi Ito ,  Iwao Higashikawa ,  Masamitsu Itoh ,  Takashi Kamo ,  Hiroaki Hazama ,  Takayuki Iwamatsu

发明人： Kenji Kawano ,  Shinichi Ito ,  Iwao Higashikawa ,  Masamitsu Itoh ,  Takashi Kamo ,  Hiroaki Hazama ,  Takayuki Iwamatsu

IPC分类号： G03F1/32 ,  G03F1/68 ,  G03F9/00

CPC分类号： G03F1/32 ,  G03F1/68

摘要： This invention provides an exposure mask including a translucent film formed on a light-transmitting substrate and having a mask pattern, and a stabilized region formed in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film to prevent variations in physical properties of the translucent film. In addition, this invention provides a method of manufacturing an exposure mask, including the steps of forming a translucent film on a light-transmitting substrate, forming a photosensitive resin film on the translucent film, forming a photosensitive resin pattern by exposing the photosensitive resin film to a radiation or a charged particle beam, removing an exposed portion of the translucent film by using the photosensitive resin pattern as a mask, removing the photosensitive resin pattern, and forming a stabilized region in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film before the step of forming the photosensitive resin film or after the step of forming the photosensitive resin pattern. Also, this invention provides an apparatus for manufacturing an exposure mask, including a light source for radiating light containing at least an exposure wavelength onto a translucent film formed on a light-transmitting substrate, a photodetecting unit for detecting light emitted from the light source and transmitted through or reflected by the translucent film, and a measuring unit for measuring the characteristic of the translucent film from the light detected by the photodetecting unit.

摘要翻译： 本发明提供一种曝光掩模，其包括形成在透光基板上并具有掩模图案的半透明膜，以及形成在透光基板和半透膜之间的边界中的至少半透明的表面的稳定区域 膜以防止半透明膜的物理性质的变化。 此外，本发明提供一种制造曝光掩模的方法，包括以下步骤：在透光性基板上形成半透膜，在半透膜上形成感光性树脂膜，通过使感光性树脂膜曝光，形成感光性树脂图案 通过使用感光性树脂图案作为掩模去除透光性膜的露出部分，除去感光性树脂图案，在透光性基板与透光性的界面之间形成稳定区域 或在形成感光性树脂膜的步骤之前或在形成感光性树脂图案的步骤之后，至少在半透明膜的表面上。 另外，本发明提供了一种用于制造曝光掩模的装置，包括用于将至少包含曝光波长的光发射到形成在透光基板上的半透明膜上的光源，用于检测从光源发射的光的光电检测单元和 通过透光膜透射或反射，以及测量单元，用于根据由光检测单元检测到的光来测量半透膜的特性。

公开(公告)号：US4270691A

公开(公告)日：1981-06-02

申请号：US5459

申请日：1979-01-22

申请人： Shinya Ishii ,  Takaharu Saito ,  Masahiko Sugiyama ,  Takashi Kamo

发明人： Shinya Ishii ,  Takaharu Saito ,  Masahiko Sugiyama ,  Takashi Kamo

IPC分类号： B23K20/16 ,  C04B37/00 ,  G01N27/409

CPC分类号： C04B35/486 ,  B23K20/16 ,  C04B35/6262 ,  C04B35/62695 ,  C04B37/006 ,  C04B2235/3225 ,  C04B2237/122 ,  C04B2237/125 ,  C04B2237/126 ,  C04B2237/34 ,  C04B2237/348 ,  C04B2237/765 ,  C04B2237/84 ,  Y10T29/417

摘要： Metallized layers are formed respectively on the surfaces to be joined of the ceramic members by performing metallized treatment on the surfaces, and then, these metallized layers are pressed against each other, and under pressure are diffusion-bonded at high temperature. A metal foil which can form a solid solution with the metallized layers can be interposed between the metallized layers before diffusion-bonding. This method can be used to manufacture an oxygen sensor element.

摘要翻译： 通过对表面进行金属化处理，分别在陶瓷构件的被接合面上形成金属化层，然后将这些金属化层压在一起，在高压下进行扩散接合。 可以在扩散接合之前，在金属化层之间插入能够与金属化层形成固溶体的金属箔。 该方法可用于制造氧传感器元件。

公开(公告)号：US08173332B2

公开(公告)日：2012-05-08

申请号：US12749250

申请日：2010-03-29

申请人： Takashi Kamo ,  Osamu Suga

发明人： Takashi Kamo ,  Osamu Suga

IPC分类号： G03F1/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F1/26 ,  G03F7/70283

摘要： A reflection-type exposure mask includes a multilayer reflective film in a main surface and serving as a high reflective region to an exposure light, and an absorber pattern on the multilayer reflective film and serving as a low reflective region to the exposure light, wherein a phase difference between reflection lights of the exposure light from the multilayer reflective film and the absorber pattern is in a range of 180°±10°, and the absorber pattern includes first and second linear patterns having longitudinal directions intersecting at right angles, contrast values of optical images of the first and second linear patterns formed on a wafer is to be 0.6 or more when one of the longitudinal directions of the first and second patterns agree with an incident direction of the exposure light to the main surface viewed from above the main surface.

摘要翻译： 反射型曝光掩模包括主表面中的多层反射膜并且用作曝光用光的高反射区域，并且在多层反射膜上形成作为曝光用光的低反射区域的吸收体图案，其中， 来自多层反射膜的曝光光的反射光和吸收体图案之间的相位差在180°±10°的范围内，吸收体图案包括纵向相交成直角的第一和第二线状图案，对比度值 形成在晶片上的第一和第二线状图案的光学图像在第一和第二图案的纵向方向之一与主表面上方观察到的曝光的入射方向一致时为0.6以上 。

公开(公告)号：US20090095631A1

公开(公告)日：2009-04-16

申请号：US12092966

申请日：2006-12-20

申请人： Takashi Kamo ,  Kyoichi Shukuri ,  Shunji Kuramoto

发明人： Takashi Kamo ,  Kyoichi Shukuri ,  Shunji Kuramoto

IPC分类号： C25B1/00

CPC分类号： H01M10/54 ,  H01M4/131 ,  H01M4/133 ,  H01M4/242 ,  H01M10/0525 ,  H01M10/345 ,  Y02E60/122 ,  Y02E60/124 ,  Y02W30/84 ,  Y10T29/53135

摘要： An electrode plate (20) for storage batteries is immersed into an aqueous solution (18) containing phosphoric acid, an ethoxy alcohol, ammonium bifluoride, sulfonic acid and sodium xylenesulfonate, and the aqueous solution (18) is stirred by a screw stirrer (22). The aqueous solution (18) is kept at about 30° C. by a heater (14), and the active material of the electrode (20) is separated therefrom. The aqueous solution (18) contains the respective solutes in the following mass ratios: 15-20 parts by mass of the phosphoric acid; 3-7 parts by mass of the ethoxy alcohol; 2-6 parts by mass of the ammonium bifluoride; 4-8 parts by mass of the sulfonic acid; and 1-3 parts by mass of the sodium xylenesulfonate.

摘要翻译： 将用于蓄电池的电极板（20）浸入含有磷酸，乙氧基醇，二氟化铵，磺酸和二甲苯磺酸钠的水溶液（18）中，并将水溶液（18）用螺杆搅拌器（22 ）。 水溶液（18）通过加热器（14）保持在约30℃，电极（20）的活性物质与其分离。 水溶液（18）含有以下质量比的各溶质：15〜20质量份的磷酸; 3-7质量份乙氧基醇; 2-6质量份的二氟化铵; 4-8质量份磺酸; 和1-3质量份的二甲苯磺酸钠。