公开(公告)号：US20070000428A1

公开(公告)日：2007-01-04

申请号：US11514969

申请日：2006-09-05

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Satoshi Murakami ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Satoshi Murakami ,  Mai Akiba

IPC分类号： C30B15/14

CPC分类号： H01L27/1285 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/066 ,  B23K26/0738 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/76894 ,  H01L27/1296 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L51/5284 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： Each region, which should be left on a substrate after patterning, of a semiconductor film is grasped in accordance with a mask. Then, each region to be scanned with laser light is determined so that at least the region to be obtained through the patterning is crystallized, and a beam spot is made to hit the region to be scanned, thereby partially crystallizing the semiconductor film. Each portion with low output energy of the beam spot is shielded by a slit. In the present invention, the laser light is not scanned and irradiated onto the entire surface of the semiconductor film but is scanned such that at least each indispensable portion is crystallized to a minimum. With the construction described above, it becomes possible to save time taken to irradiate the laser light onto each portion to be removed through the patterning after the crystallization of the semiconductor film.

摘要翻译： 根据掩模掌握半导体膜上的应该留在基板上的每个区域。 然后，确定要用激光扫描的每个区域，使得至少要通过图案化获得的区域结晶，并且使光点撞击要扫描的区域，从而部分地使半导体膜结晶。 光束点的低输出能量的每个部分被狭缝屏蔽。 在本发明中，激光不被扫描并照射到半导体膜的整个表面上，而被扫描，使得至少每个不可缺少的部分被最终结晶化。 利用上述结构，可以在半导体膜结晶之后通过图案化节省将激光照射到要去除的每个部分上所需的时间。

公开(公告)号：US07050878B2

公开(公告)日：2006-05-23

申请号：US10300927

申请日：2002-11-21

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba

IPC分类号： G06F19/00

CPC分类号： H01L21/02678 ,  B23K26/04 ,  B23K26/0604 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/12 ,  B23K26/1224 ,  B23K26/123 ,  B23K26/127 ,  H01L21/02683 ,  H01L21/2026

摘要： Providing a semiconductor fabricating apparatus using a laser crystallization technique for enhancing the processing efficiency for substrate and for increasing the mobility of a semiconductor film. The semiconductor fabricating apparatus of multi-chamber system includes a film formation equipment for forming a semiconductor film, and a laser irradiation equipment. The laser irradiation equipment includes first means for controlling a laser irradiation position relative to an irradiation object, second means (laser oscillator) for emitting laser light, third means (optical system) for processing or converging the laser light, and fourth means for controlling the oscillation of the second means and for controlling the first means in a manner that a beam spot of the laser light processed by the third means may cover a place determined based on data on a mask configuration (pattern information).

摘要翻译： 提供一种使用激光结晶技术的半导体制造装置，用于提高衬底的处理效率和增加半导体膜的迁移率。 多室系统的半导体制造装置包括用于形成半导体膜的成膜设备和激光照射设备。 激光照射设备包括用于控制相对于照射物体的激光照射位置的第一装置，用于发射激光的第二装置（激光振荡器），用于处理或会聚激光的第三装置（光学系统），以及用于控制 第二装置的振荡和第一装置的控制，使得由第三装置处理的激光束的光斑可以覆盖基于掩模配置（图案信息）上的数据确定的位置。

公开(公告)号：US20050277028A1

公开(公告)日：2005-12-15

申请号：US11185737

申请日：2005-07-21

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba

IPC分类号： H01L21/20 ,  B23K26/06 ,  B23K26/08 ,  G02F1/1368 ,  G03F1/00 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786 ,  H01S3/00 ,  H01S5/06

CPC分类号： H01L21/02683 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/082 ,  B23K2101/007 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285

摘要： Provided are a laser apparatus of continuous oscillation that is capable of enhancing the efficiency of substrate processing, a laser irradiation method, and a manufacturing method for a semiconductor device using the laser apparatus. A portion of a semiconductor film that should be left on a substrate after patterning is grasped in accordance with a mask. Then, a portion to be scanned with a laser light is determined so that it is possible to crystallize at least the portion to be obtained through the patterning. Also, a beam spot is made to strike the portion to be scanned. As a result, the semiconductor film is partially crystallized. That is, with the present invention, the laser light is not scanned and irradiated onto the entire surface of a semiconductor film but is scanned so that at least an indispensable portion is crystallized. With the construction described above, it becomes possible to save a time taken to irradiate the laser light onto a portion that will be removed through the patterning after the crystallization of the semiconductor film.

摘要翻译： 提供能够提高基板处理效率的连续振荡的激光装置，激光照射方法以及使用该激光装置的半导体装置的制造方法。 根据掩模掌握在图案化之后留在基板上的半导体膜的一部分。 然后，确定要用激光扫描的部分，使得可以通过图案化至少使待获得的部分结晶。 此外，使光束点撞击要扫描的部分。 结果，半导体膜部分结晶。 也就是说，利用本发明，激光不被扫描并照射到半导体膜的整个表面上，而是被扫描，使得至少不可缺少的部分被结晶。 利用上述结构，可以将半导体膜结晶后的激光照射到通过图案化去除的部分上所花费的时间。

公开(公告)号：US07892952B2

公开(公告)日：2011-02-22

申请号：US11185737

申请日：2005-07-21

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba

IPC分类号： H01L21/477

CPC分类号： H01L21/02683 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/082 ,  B23K2101/007 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285

摘要： Provided are a laser apparatus of continuous oscillation that is capable of enhancing the efficiency of substrate processing, a laser irradiation method, and a manufacturing method for a semiconductor device using the laser apparatus. A portion of a semiconductor film that should be left on a substrate after patterning is grasped in accordance with a mask. Then, a portion to be scanned with a laser light is determined so that it is possible to crystallize at least the portion to be obtained through the patterning. Also, a beam spot is made to strike the portion to be scanned. As a result, the semiconductor film is partially crystallized. That is, with the present invention, the laser light is not scanned and irradiated onto the entire surface of a semiconductor film but is scanned so that at least an indispensable portion is crystallized. With the construction described above, it becomes possible to save a time taken to irradiate the laser light onto a portion that will be removed through the patterning after the crystallization of the semiconductor film.

摘要翻译： 提供能够提高基板处理效率的连续振荡的激光装置，激光照射方法以及使用该激光装置的半导体装置的制造方法。 根据掩模掌握在图案化之后留在基板上的半导体膜的一部分。 然后，确定要用激光扫描的部分，使得可以通过图案化至少使待获得的部分结晶。 此外，使光束点撞击要扫描的部分。 结果，半导体膜部分结晶。 也就是说，利用本发明，激光不被扫描并照射到半导体膜的整个表面上，而是被扫描，使得至少不可缺少的部分结晶化。 利用上述结构，可以将半导体膜结晶后的激光照射到通过图案化去除的部分上所花费的时间。

公开(公告)号：US08696808B2

公开(公告)日：2014-04-15

申请号：US11514969

申请日：2006-09-05

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Satoshi Murakami ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Satoshi Murakami ,  Mai Akiba

IPC分类号： C30B1/04

CPC分类号： H01L27/1285 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/066 ,  B23K26/0738 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/76894 ,  H01L27/1296 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L51/5284 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： Each region, which should be left on a substrate after patterning, of a semiconductor film is grasped in accordance with a mask. Then, each region to be scanned with laser light is determined so that at least the region to be obtained through the patterning is crystallized, and a beam spot is made to hit the region to be scanned, thereby partially crystallizing the semiconductor film. Each portion with low output energy of the beam spot is shielded by a slit. In the present invention, the laser light is not scanned and irradiated onto the entire surface of the semiconductor film but is scanned such that at least each indispensable portion is crystallized to a minimum. With the construction described above, it becomes possible to save time taken to irradiate the laser light onto each portion to be removed through the patterning after the crystallization of the semiconductor film.

摘要翻译： 根据掩模掌握半导体膜上的应该留在基板上的每个区域。 然后，确定要用激光扫描的每个区域，使得至少要通过图案化获得的区域结晶，并且使光点撞击要扫描的区域，从而部分地使半导体膜结晶。 光束点的低输出能量的每个部分被狭缝屏蔽。 在本发明中，激光不被扫描并照射到半导体膜的整个表面上，而被扫描，使得至少每个不可缺少的部分被最终结晶化。 利用上述结构，可以在半导体膜结晶之后通过图案化节省将激光照射到要去除的每个部分上所需的时间。

公开(公告)号：US07105048B2

公开(公告)日：2006-09-12

申请号：US10305367

申请日：2002-11-27

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Satoshi Murakami ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Satoshi Murakami ,  Mai Akiba

IPC分类号： C30B1/02

CPC分类号： H01L27/1285 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/066 ,  B23K26/0738 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/76894 ,  H01L27/1296 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L51/5284 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： Each region, which should be left on a substrate after patterning, of a semiconductor film is grasped in accordance with a mask. Then, each region to be scanned with laser light is determined so that at least the region to be obtained through the patterning is crystallized, and a beam spot is made to hit the region to be scanned, thereby partially crystallizing the semiconductor film. Each portion with low output energy of the beam spot is shielded by a slit. In the present invention, the laser light is not scanned and irradiated onto the entire surface of the semiconductor film but is scanned such that at least each indispensable portion is crystallized to a minimum. With the construction described above, it becomes possible to save time taken to irradiate the laser light onto each portion to be removed through the patterning after the crystallization of the semiconductor film.

公开(公告)号：US07439115B2

公开(公告)日：2008-10-21

申请号：US11370009

申请日：2006-03-08

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba

IPC分类号： H01L21/84

CPC分类号： H01L21/02678 ,  B23K26/04 ,  B23K26/0604 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/12 ,  B23K26/1224 ,  B23K26/123 ,  B23K26/127 ,  H01L21/02683 ,  H01L21/2026

摘要： Providing a semiconductor fabricating apparatus using a laser crystallization technique for enhancing the processing efficiency for substrate and for increasing the mobility of a semiconductor film. The semiconductor fabricating apparatus of multi-chamber system includes a film formation equipment for forming a semiconductor film, and a laser irradiation equipment. The laser irradiation equipment includes first means for controlling a laser irradiation position relative to an irradiation object, second means (laser oscillator) for emitting laser light, third means (optical system) for processing or converging the laser light, and fourth means for controlling the oscillation of the second means and for controlling the first means in a manner that a beam spot of the laser light processed by the third means may cover a place determined based on data on a mask configuration (pattern information).

摘要翻译： 提供一种使用激光结晶技术的半导体制造装置，用于提高衬底的处理效率和增加半导体膜的迁移率。 多室系统的半导体制造装置包括用于形成半导体膜的成膜设备和激光照射设备。 激光照射设备包括用于控制相对于照射物体的激光照射位置的第一装置，用于发射激光的第二装置（激光振荡器），用于处理或会聚激光的第三装置（光学系统），以及用于控制 第二装置的振荡和第一装置的控制，使得由第三装置处理的激光束的光斑可以覆盖基于掩模配置（图案信息）上的数据确定的位置。

公开(公告)号：US07037809B2

公开(公告)日：2006-05-02

申请号：US10739105

申请日：2003-12-19

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba

IPC分类号： H01L21/20 ,  H01L21/26

CPC分类号： H01L21/02683 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/082 ,  B23K2101/007 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285

摘要： The present invention provides a semiconductor device manufacturing method where a beam spot is formed by having respective beam spots of a plurality of laser lights overlap each other on a semiconductor film using an optical system. Crystallinity, in a region determined by pattern information, is enhanced by scanning the beam spot to form an island-like semiconductor film based on the pattern information.

摘要翻译： 本发明提供一种半导体器件制造方法，其中通过使用光学系统在半导体膜上使多个激光的各个光束点彼此重叠而形成束斑。 通过图案信息确定的区域中的结晶度通过基于图案信息扫描束斑以形成岛状半导体膜来增强。

公开(公告)号：US06700096B2

公开(公告)日：2004-03-02

申请号：US10279960

申请日：2002-10-25

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba

IPC分类号： B23K2600

CPC分类号： H01L21/02683 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/082 ,  B23K2101/007 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285

摘要： Provided are a laser apparatus of continuous oscillation that is capable of enhancing the efficiency of substrate processing, a laser irradiation method, and a manufacturing method for a semiconductor device using the laser apparatus. A portion of a semiconductor film that should be left on a substrate after patterning is grasped in accordance with a mask. Then, a portion to be scanned with a laser light is determined so that it is possible to crystallize at least the portion to be obtained through the patterning. Also, a beam spot is made to strike the portion to be scanned. As a result, the semiconductor film is partially crystallized. That is, with the present invention, the laser light is not scanned and irradiated onto the entire surface of a semiconductor film but is scanned so that at least an indispensable portion is crystallized. With the construction described above, it becomes possible to save a time taken to irradiate the laser light onto a portion that will be removed through the patterning after the crystallization of the semiconductor film.

摘要翻译： 提供能够提高基板处理效率的连续振荡的激光装置，激光照射方法以及使用该激光装置的半导体装置的制造方法。 根据掩模掌握在图案化之后留在基板上的半导体膜的一部分。 然后，确定要用激光扫描的部分，使得可以通过图案化至少使待获得的部分结晶。 此外，使光束点撞击要扫描的部分。 结果，半导体膜部分结晶。 也就是说，利用本发明，激光不被扫描并照射到半导体膜的整个表面上，而是被扫描，使得至少不可缺少的部分被结晶。 利用上述结构，可以将半导体膜结晶后的激光照射到通过图案化去除的部分上所花费的时间。

公开(公告)号：US20070148925A1

公开(公告)日：2007-06-28

申请号：US11707094

申请日：2007-02-16

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Koichiro Tanaka ,  Kenji Kasahara ,  Ritsuko Kawasaki

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Koichiro Tanaka ,  Kenji Kasahara ,  Ritsuko Kawasaki

IPC分类号： H01L21/84 ,  H01L21/00 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02683 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  Y10S438/904

摘要： To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.

摘要翻译： 为了提供一种激光装置和激光退火方法，通过该方法获得具有较大晶粒尺寸的结晶半导体膜并且其运行成本低。 使用易于维护的固态激光器和耐久性高的激光器，并且从其发射的激光线性化，从而提高了生产量并降低了整体的生产成本。 此外，用这样的激光照射非晶半导体膜的正面和背面，得到晶粒尺寸较大的结晶半导体膜。