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1.发明申请Laser apparatus, laser annealing method, and manufacture method of a semiconductor device 有权激光装置，激光退火方法以及半导体装置的制造方法公开(公告)号：US20070148925A1
公开(公告)日：2007-06-28
申请号：US11707094
申请日：2007-02-16
CPC分类号： H01L21/02683 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/02691 , H01L21/2026 , H01L27/1285 , Y10S438/904
摘要： To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.
摘要翻译： 为了提供一种激光装置和激光退火方法，通过该方法获得具有较大晶粒尺寸的结晶半导体膜并且其运行成本低。 使用易于维护的固态激光器和耐久性高的激光器，并且从其发射的激光线性化，从而提高了生产量并降低了整体的生产成本。 此外，用这样的激光照射非晶半导体膜的正面和背面，得到晶粒尺寸较大的结晶半导体膜。
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2.发明授权公开(公告)号：US06730550B1
公开(公告)日：2004-05-04
申请号：US09635422
申请日：2000-08-10
IPC分类号： H01L2100
CPC分类号： H01L21/02683 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/02691 , H01L21/2026 , H01L27/1285 , Y10S438/904
摘要： To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.
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3.发明授权公开(公告)号：US07473622B2
公开(公告)日：2009-01-06
申请号：US11707094
申请日：2007-02-16
IPC分类号： H01L21/20
CPC分类号： H01L21/02683 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/02691 , H01L21/2026 , H01L27/1285 , Y10S438/904
摘要： To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.
摘要翻译： 为了提供一种激光装置和激光退火方法，通过该方法获得具有较大晶粒尺寸的结晶半导体膜并且其运行成本低。 使用易于维护的固态激光器和耐久性高的激光器，并且从其发射的激光线性化，从而提高了生产量并降低了整体的生产成本。 此外，用这样的激光照射非晶半导体膜的正面和背面，得到晶粒尺寸较大的结晶半导体膜。
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4.发明授权Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device 有权激光装置，激光退火方法以及半导体装置的制造方法公开(公告)号：US07179698B2
公开(公告)日：2007-02-20
申请号：US10871380
申请日：2004-06-21
IPC分类号： H01L21/00
CPC分类号： H01L21/02683 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/02691 , H01L21/2026 , H01L27/1285 , Y10S438/904
摘要： To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.
摘要翻译： 为了提供一种激光装置和激光退火方法，通过该方法获得具有较大晶粒尺寸的结晶半导体膜并且其运行成本低。 使用易于维护的固态激光器和耐久性高的激光器，并且从其发射的激光线性化，从而提高了生产量并降低了整体的生产成本。 此外，用这样的激光照射非晶半导体膜的正面和背面，得到晶体尺寸较大的结晶半导体膜。
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5.发明授权Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device 有权激光装置，激光退火方法以及半导体装置的制造方法公开(公告)号：US06974731B2
公开(公告)日：2005-12-13
申请号：US09986743
申请日：2001-11-09
CPC分类号： H01L21/02683 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/02691 , H01L21/2026 , H01L27/1285 , Y10S438/904
摘要： To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.
摘要翻译： 为了提供一种激光装置和激光退火方法，通过该方法获得具有较大晶粒尺寸的结晶半导体膜并且其运行成本低。 使用易于维护的固态激光器和耐久性高的激光器，并且从其发射的激光线性化，从而提高了生产量并降低了整体的生产成本。 此外，用这样的激光照射非晶半导体膜的正面和背面，得到晶粒尺寸较大的结晶半导体膜。
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6.发明授权Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device 有权激光装置，激光退火方法以及半导体装置的制造方法公开(公告)号：US06753212B2
公开(公告)日：2004-06-22
申请号：US09932935
申请日：2001-08-21
IPC分类号： H01L2184
CPC分类号： H01L21/02683 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/02691 , H01L21/2026 , H01L27/1285 , Y10S438/904
摘要： To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.
摘要翻译： 为了提供一种激光装置和激光退火方法，通过该方法获得具有较大晶粒尺寸的结晶半导体膜并且其运行成本低。 使用易于维护的固态激光器和耐久性高的激光器，并且从其发射的激光线性化，从而提高了生产量并降低了整体的生产成本。 此外，用这样的激光照射非晶半导体膜的正面和背面，得到晶粒尺寸较大的结晶半导体膜。
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7.发明授权公开(公告)号：US07338913B2
公开(公告)日：2008-03-04
申请号：US10406295
申请日：2003-04-04
IPC分类号： H01L21/26
CPC分类号： H01L21/02675 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/66757 , H01L29/78621 , H01L29/78624 , H01L29/78633 , H01L29/78675
摘要： A laser annealing method for obtaining a crystalline semiconductor film having a large grain size is provided. Laser light is irradiated to the top surface and the bottom surface of an amorphous semiconductor film when crystallizing the amorphous semiconductor film by laser light irradiation. Furthermore, a relationship of 0
摘要翻译： 提供了用于获得具有大晶粒尺寸的晶体半导体膜的激光退火方法。 当通过激光照射使非晶半导体膜结晶时，激光照射到非晶半导体膜的顶表面和底表面。 此外，0 <（I <0> / I> 0 ）<1，或1 <（I / 对于在照射到顶表面时激光的有效能量强度之间的比率（I 0> 0 ）来实现（＆lt; 0＆lt; I＆lt; 0＆gt;）和照射到底面（I 0 0'）时的激光的有效能量强度。
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8.发明授权Method of crystallizing a semiconductor layer by applying laser irradiation that vary in energy to its top and bottom surfaces 有权通过施加能量对其顶部和底部表面变化的激光照射来使半导体层结晶的方法公开(公告)号：US06548370B1
公开(公告)日：2003-04-15
申请号：US09640084
申请日：2000-08-17
IPC分类号： H01L2904
CPC分类号： H01L21/02675 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/66757 , H01L29/78621 , H01L29/78624 , H01L29/78633 , H01L29/78675
摘要： A laser annealing method for obtaining a crystalline semiconductor film having a large grain size is provided. Laser light is irradiated to the top surface and the bottom surface of an amorphous semiconductor film when crystallizing the amorphous semiconductor film by laser light irradiation. Furthermore, a relationship of 0
摘要翻译： 提供了用于获得具有大晶粒尺寸的晶体半导体膜的激光退火方法。 当通过激光照射使非晶半导体膜结晶时，激光照射到非晶半导体膜的顶表面和底表面。 此外，对于照射到顶部的激光的有效能量强度之间的比（I0 / I0'），实现0 <（I0'/ I0）<1或1 <（I0'/ I0）的关系 表面（I0）和当照射到底面（I0'）时激光的有效能量强度
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公开(公告)号：US06744008B1
公开(公告)日：2004-06-01
申请号：US09640521
申请日：2000-08-17
IPC分类号： B23K26067
CPC分类号： H01L21/02675 , B23K26/0608 , B23K26/067 , B23K26/0676 , H01L21/2026
摘要： For crystallizing an amorphous semiconductor film by means of irradiation of laser beams, a top surface and a back surface of the amorphous semiconductor film are irradiated with the laser beams. In this case, an effective energy intensity Io of the laser beams to be applied onto the top surface and an effective energy intensity Io′ of the laser beams to be applied onto the back surface satisfy the relationship of 0
摘要翻译： 为了通过激光束的照射使非晶半导体膜结晶，用激光束照射非晶半导体膜的上表面和后表面。 在这种情况下，要施加到顶表面上的激光束的有效能量强度Io和要施加到背面上的激光束的有效能量强度Io'满足0
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公开(公告)号：US07456371B2
公开(公告)日：2008-11-25
申请号：US10836204
申请日：2004-05-03
CPC分类号： H01L21/02675 , B23K26/0608 , B23K26/067 , B23K26/0676 , H01L21/2026
摘要： The present invention provides a laser apparatus including a transmission-variable mirror and a method for forming a semiconductor device using the apparatus. For crystallizing an amorphous semiconductor film by irradiation of laser beams, a top surface and a back surface of the amorphous semiconductor film are irradiated with the laser beams. In this case, the transmission-variable mirror is used for dividing a laser light emitted from a laser source.
摘要翻译： 本发明提供一种激光装置，其包括透射变换镜和使用该装置形成半导体器件的方法。 为了通过激光束的照射使非晶半导体膜结晶，用激光照射非晶半导体膜的上表面和背面。 在这种情况下，透射变换镜用于分割从激光源发射的激光。
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