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    SEMICONDUCTOR DEVICE
    14.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20110089419A1

    公开(公告)日：2011-04-21

    申请号：US12907722

    申请日：2010-10-19

    申请人： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kosei Noda ,  Kouhei Toyotaka ,  Kazunori Watanabe ,  Hikaru Harada

    发明人： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kosei Noda ,  Kouhei Toyotaka ,  Kazunori Watanabe ,  Hikaru Harada

    IPC分类号： H01L29/786 ,  H01L29/78

    CPC分类号： H01L29/7869 ,  G06F15/76 ,  H01L27/10805 ,  H01L27/10873 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/1112 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/60 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78696

    摘要： An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate.

    摘要翻译： 目的是提供一种存储器件，其包括可通过具有低截止电流的薄膜晶体管无故障地操作的存储元件。 提供了一种存储器件，其中包括至少一个包括氧化物半导体层的薄膜晶体管的存储元件被布置为矩阵。 包括氧化物半导体层的薄膜晶体管具有高场效应迁移率和低截止电流，因此可以有利地操作而没有问题。 此外，可以降低功耗。 由于存储器件和像素可以形成在一个衬底上，所以这种存储器件在包括氧化物半导体层的薄膜晶体管被设置在显示器件的像素中的情况下是特别有效的。

    Voltage regulator circuit and semiconductor device, including transistor using oxide semiconductor
    15.
    发明授权
    Voltage regulator circuit and semiconductor device, including transistor using oxide semiconductor 有权
    电压调节器电路和半导体器件，包括使用氧化物半导体的晶体管

    公开(公告)号：US08766608B2

    公开(公告)日：2014-07-01

    申请号：US12909629

    申请日：2010-10-21

    申请人： Shunpei Yamazaki ,  Jun Koyama ,  Kei Takahashi ,  Masashi Tsubuku ,  Kosei Noda

    发明人： Shunpei Yamazaki ,  Jun Koyama ,  Kei Takahashi ,  Masashi Tsubuku ,  Kosei Noda

    IPC分类号： G05F1/00 ,  H01L27/14

    CPC分类号： H01L27/1225 ,  H01L27/1255 ,  H01L29/7869 ,  H02M3/07 ,  H02M3/158

    摘要： A voltage regulator circuit includes a transistor and a capacitor. The transistor includes a gate, a source, and a drain, a first signal is inputted to one of the source and the drain, a second signal which is a clock signal is inputted to the gate, an oxide semiconductor layer is used for a channel formation layer, and an off-state current is less than or equal to 10 aA/μm. The capacitor includes a first electrode and a second electrode, the first electrode is electrically connected to the other of the source and the drain of the transistor, and a high power source voltage and a low power source voltage are alternately applied to the second electrode.

    摘要翻译： 电压调节器电路包括晶体管和电容器。 晶体管包括栅极，源极和漏极，第一信号被输入到源极和漏极中的一个，作为时钟信号的第二信号被输入到栅极，氧化物半导体层被用于沟道 形成层，截止电流小于或等于10AA /μm。 电容器包括第一电极和第二电极，第一电极电连接到晶体管的源极和漏极中的另一个，并且高电源电压和低电源电压交替施加到第二电极。

    VOLTAGE REGULATOR CIRCUIT
    17.
    发明申请
    VOLTAGE REGULATOR CIRCUIT 有权
    电压调节器电路

    公开(公告)号：US20110101942A1

    公开(公告)日：2011-05-05

    申请号：US12909629

    申请日：2010-10-21

    申请人： Shunpei Yamazaki ,  Jun Koyama ,  Kei Takahashi ,  Masashi Tsubuku ,  Kosei Noda

    发明人： Shunpei Yamazaki ,  Jun Koyama ,  Kei Takahashi ,  Masashi Tsubuku ,  Kosei Noda

    IPC分类号： G05F1/10 ,  H01L29/12

    CPC分类号： H01L27/1225 ,  H01L27/1255 ,  H01L29/7869 ,  H02M3/07 ,  H02M3/158

    摘要： A voltage regulator circuit includes a transistor and a capacitor. The transistor includes a gate, a source, and a drain, a first signal is inputted to one of the source and the drain, a second signal which is a clock signal is inputted to the gate, an oxide semiconductor layer is used for a channel formation layer, and an off-state current is less than or equal to 10 aA/μm. The capacitor includes a first electrode and a second electrode, the first electrode is electrically connected to the other of the source and the drain of the transistor, and a high power source voltage and a low power source voltage are alternately applied to the second electrode.

    摘要翻译： 电压调节器电路包括晶体管和电容器。 晶体管包括栅极，源极和漏极，第一信号被输入到源极和漏极中的一个，作为时钟信号的第二信号被输入到栅极，氧化物半导体层被用于沟道 形成层，截止电流小于或等于10AA /μm。 电容器包括第一电极和第二电极，第一电极电连接到晶体管的源极和漏极中的另一个，并且高电源电压和低电源电压交替施加到第二电极。

    Transistor including an oxide semiconductor and display device using the same
    18.
    发明授权
    Transistor including an oxide semiconductor and display device using the same 有权
    包括氧化物半导体的晶体管和使用其的显示装置

    公开(公告)号：US09082858B2

    公开(公告)日：2015-07-14

    申请号：US13026511

    申请日：2011-02-14

    申请人： Masashi Tsubuku ,  Kosei Noda

    发明人： Masashi Tsubuku ,  Kosei Noda

    IPC分类号： H01L29/12 ,  H01L27/15 ,  H01L29/786 ,  H01L27/12

    CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/156

    摘要： The band tail state and defects in the band gap are reduced as much as possible, whereby optical absorption of energy which is in the vicinity of the band gap or less than or equal to the band gap is reduced. In that case, not by merely optimizing conditions of manufacturing an oxide semiconductor film, but by making an oxide semiconductor to be a substantially intrinsic semiconductor or extremely close to an intrinsic semiconductor, defects on which irradiation light acts are reduced and the effect of light irradiation is reduced essentially. That is, even in the case where light with a wavelength of 350 nm is delivered at 1×1013 photons/cm2·sec, a channel region of a transistor is formed using an oxide semiconductor, in which the absolute value of the amount of the variation in the threshold voltage is less than or equal to 0.65 V.

    摘要翻译： 频带尾部状态和带隙中的缺陷尽可能地减小，由此减小了在带隙附近或小于或等于带隙的能量的光吸收。 在这种情况下，不是仅通过优化氧化物半导体膜的制造条件，而是通过使氧化物半导体成为本质上的本征半导体，或者非常接近本征半导体，减少照射光的作用的缺陷和光照射 基本上减少了。 也就是说，即使在以1×1013个光子/ cm 2·sec传递波长为350nm的光的情况下，也可以使用氧化物半导体形成晶体管的沟道区域，其中， 阈值电压的变化小于或等于0.65 V.

    Transistor including an oxide semiconductor and display device using the same
    19.
    发明授权
    Transistor including an oxide semiconductor and display device using the same 有权

    公开(公告)号：US08946708B2

    公开(公告)日：2015-02-03

    申请号：US13026511

    申请日：2011-02-14

    申请人： Masashi Tsubuku ,  Kosei Noda

    发明人： Masashi Tsubuku ,  Kosei Noda

    IPC分类号： H01L29/12 ,  H01L29/786 ,  H01L27/12

    摘要： The band tail state and defects in the band gap are reduced as much as possible, whereby optical absorption of energy which is in the vicinity of the band gap or less than or equal to the band gap is reduced. In that case, not by merely optimizing conditions of manufacturing an oxide semiconductor film, but by making an oxide semiconductor to be a substantially intrinsic semiconductor or extremely close to an intrinsic semiconductor, defects on which irradiation light acts are reduced and the effect of light irradiation is reduced essentially. That is, even in the case where light with a wavelength of 350 nm is delivered at 1×1013 photons/cm2·sec, a channel region of a transistor is formed using an oxide semiconductor, in which the absolute value of the amount of the variation in the threshold voltage is less than or equal to 0.65 V.

    Semiconductor device including oxide semiconductor and manufacturing method thereof
    20.
    发明授权
    Semiconductor device including oxide semiconductor and manufacturing method thereof 有权
    包括氧化物半导体的半导体器件及其制造方法

    公开(公告)号：US09425045B2

    公开(公告)日：2016-08-23

    申请号：US13107283

    申请日：2011-05-13

    申请人： Shunpei Yamazaki ,  Toshinari Sasaki ,  Kosei Noda

    发明人： Shunpei Yamazaki ,  Toshinari Sasaki ,  Kosei Noda

    IPC分类号： H01L21/02 ,  H01L29/786 ,  H01L27/12

    CPC分类号： H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/385 ,  H01L27/1225 ,  H01L29/7869

    摘要： It is an object to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. An oxide semiconductor film serving as a channel formation region of a transistor is formed by a sputtering method at a temperature higher than 200° C., so that the number of water molecules eliminated from the oxide semiconductor film can be 0.5/nm3 or less according to thermal desorption spectroscopy. A substance including a hydrogen atom such as hydrogen, water, a hydroxyl group, or hydride which causes variation in the electric characteristics of a transistor including an oxide semiconductor is prevented from entering the oxide semiconductor film, whereby the oxide semiconductor film can be highly purified and made to be an electrically i-type (intrinsic) semiconductor.

    摘要翻译： 本发明的目的是提供一种具有稳定的电特性和高可靠性的氧化物半导体的半导体装置。 通过溅射法在高于200℃的温度下形成用作晶体管的沟道形成区的氧化物半导体膜，从氧化物半导体膜中除去的水分子数可以为0.5nm / nm 3以下 到热解吸光谱。 包含氢原子的物质，例如氢，水，羟基或氢化物，其导致包括氧化物半导体的晶体管的电特性发生变化，从而防止氧化物半导体膜进入氧化物半导体膜，由此氧化物半导体膜可以被高度纯化 并制成电i型（本征）半导体。