公开(公告)号：US07701114B2

公开(公告)日：2010-04-20

申请号：US12326235

申请日：2008-12-02

申请人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

发明人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

IPC分类号： H03H9/25

CPC分类号： H03H9/02559

摘要： A surface acoustic wave device has a duty that is greater than about 0.5, attenuation outside the pass band is increased, and an undesirable spurious response is effectively suppressed. The surface acoustic wave device includes an LiNbO3 substrate having Euler angles (0°±5°, θ±5°, 0°±10°), an electrode that is provided on the LiNbO3 substrate and that includes an IDT electrode primarily made of Cu, a first silicon oxide film that is provided in an area other than an area in which the electrode is arranged so as to have a thickness substantially equal to that of the electrode, and a second silicon oxide film that is arranged so as to cover the electrode and the first silicon oxide film, wherein the surface acoustic wave device utilizes an SH wave, wherein a duty D of the IDT electrode 3 is at least about 0.52, and θ of the Euler angles (0°±5, θ+5°, 0°±10°) is set so as to fall within a range that satisfies the following Inequality (1A) or (1B): (1) When 0.52≦D≦0.6, −10×D+92.5−100×C≦θ≦37.5×D2−57.75×D+104.075+5710×C2−1105.7×C+45.729   Inequality (1A) (2) When D>0.6, 86.5−100×C≦θ≦37.5×D2−57.75×D+104.075+5710×C2−1105.7λC+45.729  Inequality (1B) where D is a duty, and C is a thickness of the IDT.

摘要翻译： 表面声波器件的占空比大于约0.5，通带外的衰减增加，并且有效地抑制了不期望的寄生响应。 表面声波装置包括具有欧拉角（0°±5°，±5°，0°±10°）的LiNbO 3基板，设置在LiNbO 3基板上的电极，其包括主要由 Cu，第一氧化硅膜，其设置在除了电极布置的区域之外的区域中以具有与电极的厚度基本相等的厚度;以及第二氧化硅膜，其布置成覆盖 所述电极和所述第一氧化硅膜，其中所述表面声波器件利用SH波，其中所述IDT电极3的占空比D为至少约0.52， 的欧拉角（0°±5，θ= 5°，0°±10°）被设定为在满足以下不等式（1A）或（1B）的范围内：（1）当0.52＆ ; D，D，N，E，D，D，D，N，E，D，N，E， ，86.5-100×C＆nlE;＆Thetas;＆nlE; 37.5×D2-57.75×D + 104.075 + 5710×C2-1105.7λC+ 45.729不等式（1B）其中D为任务，C为IDT的厚度。

公开(公告)号：US20090009028A1

公开(公告)日：2009-01-08

申请号：US12234836

申请日：2008-09-22

申请人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

发明人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

IPC分类号： H03H9/64

CPC分类号： H03H9/02559

摘要： A surface acoustic wave device utilizing a Rayleigh wave includes a LiNbO3 substrate having Euler angles of (0°±5°, 0±5°, 0°±10°), an electrode which is disposed on the LiNbO3 substrate and which includes an IDT electrode primarily including Au, a first silicon oxide film disposed in a region other than the region in which the above-described electrode is disposed, the first silicon oxide film having a film thickness substantially equal to the thickness of the above-described electrode, and a second silicon oxide film arranged to cover the electrode and the first silicon oxide film, wherein the film thickness of the electrode is in the range of about 0.062λ to about 0.14λ, where λ represents the wavelength of a surface acoustic wave, and θ of the above-described Euler angles of (0°±5°, 0±5°, 0°±10°) is in the range satisfying the following Formula (1): θ=31.72−206.92×exp (−1×TAu/0.0138)   Formula (1) where TAu is a value of Au electrode film thickness normalized with the wavelength λ.

摘要翻译： 利用瑞利波的表面声波装置包括具有欧拉角（0°±5°，0±5°，0°±10°）的LiNbO 3基板，设置在LiNbO 3基板上的电极，其包括IDT 主要包括Au的电极，设置在除了上述电极的区域以外的区域中的第一氧化硅膜，第一氧化硅膜的膜厚度基本上等于上述电极的厚度，以及 布置成覆盖电极和第一氧化硅膜的第二氧化硅膜，其中电极的膜厚度在约0.062λ至约0.14λ的范围内，其中λ表示声表面波的波长，θ表示 （0°±5°，0±5°，0°±10°）的上述欧拉角在满足下式（1）的范围内：<？在线公式描述=“In- 行公式“end =”lead“？> theta = 31.72-206.92xexp（-1xTAu / 0.0138） 式（1）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中TAu是用波长λ标准化的Au电极膜厚度的值。

公开(公告)号：US07230365B2

公开(公告)日：2007-06-12

申请号：US10448061

申请日：2003-05-30

申请人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

发明人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

IPC分类号： H01L41/08

CPC分类号： H03H9/02929 ,  H03H3/10 ,  H03H9/02559 ,  H03H9/14538 ,  Y10T29/42 ,  Y10T29/49016 ,  Y10T29/4913 ,  Y10T29/49135 ,  Y10T29/49155

摘要： In a manufacturing method for a SAW apparatus a first insulating layer is formed on the entire surface of a piezoelectric LiTaO3 substrate. By using a resist pattern used for forming an IDT electrode, the first insulating layer in which the IDT electrode is to be formed is removed. An electrode film made of a metal having a density higher than Al or an alloy primarily including such a metal is disposed in the area in which the first insulating layer is removed so as to form the IDT electrode. The resist pattern remaining on the first insulating layer is removed. A second insulating layer is formed to cover the first insulating layer and the IDT electrode.

摘要翻译： 在SAW器件的制造方法中，在压电LiTaO 3衬底的整个表面上形成第一绝缘层。 通过使用用于形成IDT电极的抗蚀剂图案，去除其中将形成IDT电极的第一绝缘层。 在除去第一绝缘层的区域中设置由密度高于Al的金属或主要包含金属的合金制成的电极膜，以形成IDT电极。 去除残留在第一绝缘层上的抗蚀剂图案。 形成第二绝缘层以覆盖第一绝缘层和IDT电极。

公开(公告)号：US07804221B2

公开(公告)日：2010-09-28

申请号：US12332394

申请日：2008-12-11

申请人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

发明人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

IPC分类号： H01L41/08

CPC分类号： H03H9/02559 ,  H03H9/02834 ,  H03H9/14538

摘要： A surface acoustic wave device has high power withstanding performance and is able to effectively suppress an undesirable spurious response. The surface acoustic wave device includes an LiNbO3 substrate having Euler angles (0°±5°, θ±5°, 0°±10°), an electrode that is disposed on the LiNbO3 substrate and that has an IDT electrode made mainly from Cu, a first silicon oxide film that is disposed in an area other than an area in which the electrode is disposed to have a thickness equal to that of the electrode, and a second silicon oxide film that is disposed so as to cover the electrode and the first silicon oxide film, wherein the surface acoustic wave device utilizes an SH wave, wherein a duty D of the IDT electrode is less than or equal to about 0.49, and θ of the Euler angles (0°±5°, θ±5°, 0°±10°) is set to fall within a range that satisfies the following inequality: −10×D+92.5−100×C≦θ≦37.5×D2−57.75×D+104.075+5710×C2−1105.7×C+45.729 D: duty C: thickness of the IDT electrode normalized using a wavelength λ.

摘要翻译： 表面声波器件具有高功率耐受性能，并且能够有效地抑制不期望的杂散响应。 表面声波装置包括具有欧拉角（0°±5°，±5°，0°±10°）的LiNbO 3基板，设置在LiNbO 3基板上并具有主要由 Cu，第一氧化硅膜，其设置在除了电极设置的区域以外的区域中，其厚度等于电极的厚度;以及第二氧化硅膜，其被设置为覆盖电极和 所述第一氧化硅膜，其中所述表面声波器件利用SH波，其中所述IDT电极的占空比D小于或等于约0.49， 的欧拉角（0°±5°，θ= 5°，0°±10°）被设定在满足以下不等式的范围内：-10×D + 92.5-100×C＆nlE;＆Thetas;＆nlE ; 37.5×D2-57.75×D + 104.075 + 5710×C2-1105.7×C + 45.729 D：占空比C：使用波长λ归一化的IDT电极的厚度。

公开(公告)号：US20090072659A1

公开(公告)日：2009-03-19

申请号：US12326235

申请日：2008-12-02

申请人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

发明人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

IPC分类号： H03H9/25 ,  H03H9/72 ,  H01L41/04

CPC分类号： H03H9/02559

摘要： A surface acoustic wave device has a duty that is greater than about 0.5, attenuation outside the pass band is increased, and an undesirable spurious response is effectively suppressed. The surface acoustic wave device includes an LiNbO3 substrate having Euler angles (0°±5°, θ±5°, 0°±10°), an electrode that is provided on the LiNbO3 substrate and that includes an IDT electrode primarily made of Cu, a first silicon oxide film that is provided in an area other than an area in which the electrode is arranged so as to have a thickness substantially equal to that of the electrode, and a second silicon oxide film that is arranged so as to cover the electrode and the first silicon oxide film, wherein the surface acoustic wave device utilizes an SH wave, wherein a duty D of the IDT electrode 3 is at least about 0.52, and θ of the Euler angles (0°±5, θ+5°, 0°±10°) is set so as to fall within a range that satisfies the following Inequality (1A) or (1B): (1) When 0.52≦D≦0.6, −10×D+92.5−100×C≦θ≦37.5×D2−57.75×D+104.075+5710×C2−1105.7×C+45.729  Inequality (1A) (2) When D>0.6, 86.5−100×C≦θ≦37.5×D2−57.75×D+104.075+5710×C2−1105.7λC+45.729  Inequality (1B) where D is a duty, and C is a thickness of the IDT.

摘要翻译： 表面声波器件的占空比大于约0.5，通带外的衰减增加，并且有效地抑制了不期望的寄生响应。 表面声波装置包括具有欧拉角（0°±5°，θ±5°，0°±10°）的LiNbO 3基板，设置在LiNbO 3基板上并且包括主要由Cu制成的IDT电极的电极 设置在与电极配置的区域以外的区域中的第一氧化硅膜，其厚度基本上等于电极的厚度;以及第二氧化硅膜，其被设置成覆盖 电极和第一氧化硅膜，其中表面声波装置利用SH波，其中IDT电极3的占空比D至少为约0.52，欧拉角（0°±5°，θ+ 5°） ，0°±10°）设定为满足以下不等式（1A）或（1B）的范围：<？在线公式描述=“在线公式”end =“lead”？ >（1）当0.52 <= D <= 0.6时，-10×D + 92.5-100×C <=θ<= 37.5×D 2 -57.75×D + 104.075 + 57×10×C 2 -1〜105.7×C + 45.729不等式（1A） n =“在线公式”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？>（2）当D> 0.6时，86.5-100xC <= θ<= 37.5×D2-57.75xD + 104.075 + 5710×C2-1.77.7λC+ 45.729不等式（1B）<？在线公式描述=“在线公式”end =“tail”？>其中D是任务， C是IDT的厚度。

公开(公告)号：US08427032B2

公开(公告)日：2013-04-23

申请号：US13347730

申请日：2012-01-11

申请人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

发明人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

IPC分类号： H01L41/08

CPC分类号： H03H9/02669

摘要： A surface acoustic wave device prevents a decrease in yield and a decrease in reliability, such as an impulse withstand voltage, and achieves good frequency characteristics, even when using higher frequencies. The surface acoustic wave device includes an IDT electrode disposed on a piezoelectric substrate, and a first insulating film and at least one second insulating film disposed on the IDT electrode, and utilizes a higher-order mode of an SH wave, in which the acoustic velocity of a surface acoustic wave in the first insulating film located closer to the IDT electrode than the insulating film at an outermost surface is higher than the acoustic velocity of a surface acoustic wave in the second insulating film located at the outermost surface.

摘要翻译： 表面声波装置即使在使用较高频率的情况下，也可以防止产量的降低和可靠性的降低，例如脉冲耐受电压，并实现良好的频率特性。 表面声波装置包括设置在压电基板上的IDT电极和设置在IDT电极上的第一绝缘膜和至少一个第二绝缘膜，并且利用SH波的高阶模式，其中声速 在比最外表面处的绝缘膜更靠近IDT电极的第一绝缘膜中的表面声波的声表面波的声波高于位于最外表面的第二绝缘膜中的表面声波的声速。

公开(公告)号：US07411334B2

公开(公告)日：2008-08-12

申请号：US11674928

申请日：2007-02-14

申请人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

发明人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

IPC分类号： H01L41/08

CPC分类号： H03H9/02929 ,  H03H3/10 ,  H03H9/02559 ,  H03H9/14538 ,  Y10T29/42 ,  Y10T29/49016 ,  Y10T29/4913 ,  Y10T29/49135 ,  Y10T29/49155

摘要： In a manufacturing method for a SAW apparatus a first insulating layer is formed on the entire surface of a piezoelectric LiTaO3 substrate. By using a resist pattern used for forming an IDT electrode, the first insulating layer in which the IDT electrode is to be formed is removed. An electrode film made of a metal having a density higher than Al or an alloy primarily including such a metal is disposed in the area in which the first insulating layer is removed so as to form the IDT electrode. The resist pattern remaining on the first insulating layer is removed. A second insulating layer is formed to cover the first insulating layer and the IDT electrode.

摘要翻译： 在SAW器件的制造方法中，在压电LiTaO 3衬底的整个表面上形成第一绝缘层。 通过使用用于形成IDT电极的抗蚀剂图案，去除其中将形成IDT电极的第一绝缘层。 在除去第一绝缘层的区域中设置由密度高于Al的金属或主要包含金属的合金制成的电极膜，以形成IDT电极。 去除残留在第一绝缘层上的抗蚀剂图案。 形成第二绝缘层以覆盖第一绝缘层和IDT电极。

公开(公告)号：US20070096592A1

公开(公告)日：2007-05-03

申请号：US10595237

申请日：2004-08-06

申请人： Michio Kadota ,  Takeshi Nakao

发明人： Michio Kadota ,  Takeshi Nakao

IPC分类号： H03H9/25

CPC分类号： H03H9/02559 ,  H03H3/08

摘要： A surface acoustic wave device includes a piezoelectric substrate made of LiNbO3 having an electromechanical coupling coefficient k whose square is at least about 0.025, at least one electrode that is made of a metal whose density is greater than that of Al or an alloy primarily including the metal or that is composed of laminated films made of a metal whose density is greater than that of Al or an alloy primarily including the metal and another metal, the electrode being disposed on the piezoelectric substrate, a first insulating layer disposed in a region other than a region where the at least one electrode is disposed, the thickness of the first insulating layer being substantially equal to that of the electrode, and a second insulating layer covering the electrode and the first insulating layer. The density of the electrode is at least about 1.5 times greater than that of the first insulating layer.

摘要翻译： 表面声波装置包括由LiNbO 3 3制成的压电基片，其具有至少约0.025的方形的机电耦合系数k，至少一个由密度高于其的金属制成的电极。 的Al或主要包含金属的合金，或由密度大于Al的金属或主要包含金属的合金的金属和其它金属构成的层压膜构成，所述电极设置在压电基板上，第一 绝缘层，其设置在除设置所述至少一个电极的区域以外的区域中，所述第一绝缘层的厚度与所述电极的厚度基本相等;以及覆盖所述电极和所述第一绝缘层的第二绝缘层。 电极的密度比第一绝缘层的密度高至少约1.5倍。

公开(公告)号：US20070132338A1

公开(公告)日：2007-06-14

申请号：US11674816

申请日：2007-02-14

申请人： Takeshi Nakao ,  Masakazu Mimura ,  Michio Kadota

发明人： Takeshi Nakao ,  Masakazu Mimura ,  Michio Kadota

IPC分类号： H03H9/25

CPC分类号： H03H9/02559

摘要： In a surface acoustic wave device, electrode films constituting at least one IDT are disposed on a piezoelectric substrate, and an SiO2 film is arranged on the piezoelectric substrate so as to cover the electrode films. The film-thickness of the electrode films is in the range of about 1% to about 3% of the wavelength of an excited surface acoustic wave.

摘要翻译： 在表面声波装置中，构成至少一个IDT的电极膜设置在压电基板上，并且在压电基板上设置SiO 2膜以覆盖电极膜。 电极膜的膜厚度在激发的表面声波的波长的约1％至约3％的范围内。

公开(公告)号：US07212080B2

公开(公告)日：2007-05-01

申请号：US11531003

申请日：2006-09-12

申请人： Masakazu Mimura ,  Tomohisa Komura ,  Norio Taniguchi ,  Takeshi Nakao ,  Michio Kadota

发明人： Masakazu Mimura ,  Tomohisa Komura ,  Norio Taniguchi ,  Takeshi Nakao ,  Michio Kadota

IPC分类号： H03H9/72 ,  H03H9/64

CPC分类号： H03H9/02559 ,  H03H9/6433 ,  H03H9/6466 ,  H03H9/725

摘要： A surface acoustic wave branching filter includes a first filter and a second filter each including a plurality of surface acoustic wave resonators arranged in a ladder circuit configuration. The first filter in which the frequency range of the passband is relatively low is provided on a first piezoelectric substrate, and the second filter in which the frequency range of the passband is relatively high is provided on a second piezoelectric substrate. The first piezoelectric substrate and the second piezoelectric substrate are rotation Y-cut X-propagation LiTaO3 substrates, and the cut angle of the first piezoelectric substrate is greater than the cut angle of the second piezoelectric substrate.

摘要翻译： 表面声波分波器包括第一滤波器和第二滤波器，每个滤波器包括以梯形电路配置布置的多个表面声波谐振器。 在第一压电基板上设置有通带的频率范围相对较低的第一滤波器，在第二压电基板上设置通带频率相对较高的第二滤波器。 第一压电基板和第二压电基板是旋转Y切X传播LiTaO 3 3衬底，第一压电基片的切割角大于第二压电基片的切割角。