摘要:
An IDT electrode defining any one of a plurality of surface acoustic wave resonators defining series arm resonators and parallel arm resonators, except for the IDT electrode having a smallest amount of heat generation per unit time when a signal flows between first and second signal terminals, does not face wiring electrodes.
摘要:
An IDT electrode defining any one of a plurality of surface acoustic wave resonators defining series arm resonators and parallel arm resonators, except for the IDT electrode having a smallest amount of heat generation per unit time when a signal flows between first and second signal terminals, does not face wiring electrodes.
摘要:
A surface acoustic wave branching filter includes a first filter and a second filter each including a plurality of surface acoustic wave resonators arranged in a ladder circuit configuration. The first filter in which the frequency range of the passband is relatively low is provided on a first piezoelectric substrate, and the second filter in which the frequency range of the passband is relatively high is provided on a second piezoelectric substrate. The first piezoelectric substrate and the second piezoelectric substrate are rotation Y-cut X-propagation LiTaO3 substrates, and the cut angle of the first piezoelectric substrate is greater than the cut angle of the second piezoelectric substrate.
摘要:
A one-port surface acoustic wave resonator includes a rotated Y-cut LiTaO3 substrate, an interdigital electrode transducer disposed on the LiTaO3 substrate, and reflectors disposed on both sides of the interdigital electrode transducer in the surface acoustic wave propagation direction of the interdigital electrode transducer. When the electrode finger width of the interdigital electrode transducer is denoted by a and the gap between the electrode fingers is denoted by b, the metallization ratio, a/(a+b), is in the range of about 0.55 to about 0.85 and the interdigital electrode transducer is overlapping-length weighted.
摘要:
A surface acoustic wave branching filter includes a first filter and a second filter each including a plurality of surface acoustic wave resonators arranged in a ladder circuit configuration. The first filter in which the frequency range of the passband is relatively low is provided on a first piezoelectric substrate, and the second filter in which the frequency range of the passband is relatively high is provided on a second piezoelectric substrate. The first piezoelectric substrate and the second piezoelectric substrate are rotation Y-cut X-propagation LiTaO3 substrates, and the cut angle of the first piezoelectric substrate is greater than the cut angle of the second piezoelectric substrate.
摘要:
A reception filter includes a first and second longitudinally coupled resonator-type surface acoustic wave filter portions and a surface acoustic wave resonator. The first and second longitudinally coupled resonator-type surface acoustic wave filter portions each include at least three IDT electrodes. The surface acoustic wave resonator includes one IDT electrode connected to at least one of the at least three IDT electrodes. The reception filter is arranged such that a ratio of a capacitance of the surface acoustic wave resonator to a capacitance of each of the at least one of the at least three IDT electrodes included in the longitudinally coupled resonator-type surface acoustic wave filter portion, the at least one of the at least three IDT electrodes being electrically connected to the one IDT electrode of the surface acoustic wave resonator, is in the range of about 1.9 to about 2.5.