公开(公告)号：US20220392549A1

公开(公告)日：2022-12-08

申请号：US17482095

申请日：2021-09-22

Applicant: Silicon Storage Technology, Inc.

Inventor： Viktor Markov ,  ALEXANDER KOTOV

IPC: G11C16/34 ,  G11C16/10 ,  G11C16/14 ,  G11C16/26

Abstract: A method of programing a memory device having a plurality of memory cell groups where each of the memory cell group includes N non-volatile memory cells, where N is an integer greater than or equal to 2. For each memory cell group, the method includes programming each of the non-volatile memory cells in the memory cell group to a particular program state, performing multiple read operations on each of the non-volatile memory cells in the memory cell group, identifying one of the non-volatile memory cells in the memory cell group that exhibits a lowest read variance during the multiple read operations, deeply programming all of the non-volatile memory cells in the memory cell group except the identified non-volatile memory cell, and programming the identified non-volatile memory cell in the memory cell group with user data.

公开(公告)号：US11205490B2

公开(公告)日：2021-12-21

申请号：US16828206

申请日：2020-03-24

Applicant: Silicon Storage Technology, Inc.

Inventor： Viktor Markov ,  Alexander Kotov

IPC: G11C16/16 ,  G11C16/26 ,  H01L27/11529 ,  H01L27/11524 ,  G11C16/28 ,  G11C29/50 ,  G11C16/34 ,  G11C29/04 ,  G11C29/44

Abstract: A memory device that includes a plurality of non-volatile memory cells and a controller. The controller is configured to erase the plurality of memory cells, program each of the memory cells, and for each of the memory cells, measure a threshold voltage applied to the memory cell corresponding to a target current through the memory cell in a first read operation, re-measure a threshold voltage applied to the memory cell corresponding to the target current through the memory cell in a second read operation, and identify the memory cell as defective if a difference between the measured threshold voltage and the re-measured threshold voltage exceeds a predetermined amount.

公开(公告)号：US11017866B2

公开(公告)日：2021-05-25

申请号：US16803401

申请日：2020-02-27

Applicant: Silicon Storage Technology, Inc.

Inventor： Viktor Markov ,  Alexander Kotov

IPC: G11C16/24 ,  G11C16/26 ,  G11C16/16 ,  H01L27/11529 ,  H01L27/11524

Abstract: A method of improving stability of a memory device having a controller configured to program each of a plurality of non-volatile memory cells within a range of programming states bounded by a minimum program state and a maximum program state. The method includes testing the memory cells to confirm the memory cells are operational, programming each of the memory cells to a mid-program state, and baking the memory device at a high temperature while the memory cells are programmed to the mid-program state. Each memory cell has a first threshold voltage when programmed in the minimum program state, a second threshold voltage when programmed in the maximum program state, and a third threshold voltage when programmed in the mid-program state. The third threshold voltage is substantially at a mid-point between the first and second threshold voltages, and corresponds to a substantially logarithmic mid-point of read currents.

公开(公告)号：US10079061B2

公开(公告)日：2018-09-18

申请号：US15084955

申请日：2016-03-30

Applicant: Silicon Storage Technology, Inc.

Inventor： Xiaozhou Qian ,  Viktor Markov ,  Jong-Won Yoo ,  Xiao Yan Pi ,  Alexander Kotov

IPC: G11C11/34 ,  G11C16/12 ,  G11C16/04 ,  G11C16/10

CPC classification number: G11C16/12 ,  G11C16/0425 ,  G11C16/10

Abstract: The disclosed embodiments comprise a flash memory device and a method of programming the device in a way that reduces degradation of the device compared to prior art methods.