公开(公告)号：US20050277206A1

公开(公告)日：2005-12-15

申请号：US10709999

申请日：2004-06-11

申请人： Michael Gaidis ,  David Abraham ,  Stephen Brown ,  Arunava Gupta ,  Chanro Park ,  Wolfgang Raberg

发明人： Michael Gaidis ,  David Abraham ,  Stephen Brown ,  Arunava Gupta ,  Chanro Park ,  Wolfgang Raberg

IPC分类号： G11C11/14 ,  G11C11/16 ,  H01L27/22 ,  H01L43/12

CPC分类号： G11C11/16 ,  H01L27/222 ,  H01L43/12

摘要： A method of patterning a magnetic tunnel junction (MTJ) stack is provided. According to such method, an MTJ stack is formed having a free layer, a pinned layer and a tunnel barrier layer disposed between the free layer and the pinned layer. A first area of the MTJ stack is masked while the free layer of the MTJ is exposed in a second area. The free layer is then rendered electrically and magnetically inactive in the second area.

摘要翻译： 提供了一种图案化磁性隧道结（MTJ）堆叠的方法。 根据这种方法，形成具有自由层，钉扎层和设置在自由层和被钉扎层之间的隧道势垒层的MTJ堆叠。 MTJ堆叠的第一区域被屏蔽，而MTJ的自由层在第二区域中被暴露。 然后，自由层在第二区域中被电气地且磁性地不起作用。

公开(公告)号：US20060141737A1

公开(公告)日：2006-06-29

申请号：US10560690

申请日：2003-06-24

申请人： Michael Gaidis

发明人： Michael Gaidis

IPC分类号： H01L21/76

CPC分类号： H01L21/3212 ,  B82Y10/00 ,  H01L23/544 ,  H01L27/222 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming an alignment mark structure for a semiconductor device includes forming an alignment recess at a selected level of the semiconductor device substrate. A first metal layer is formed over the selected substrate level and within the alignment recess, wherein the alignment recess is formed at a depth such that the first metal layer only partially fills the alignment recess. A second metal layer is formed over the first metal layer such that the alignment recess is completely filled. The second metal layer and the first metal layer are then planarized down to the selected substrate level, thereby creating a sacrificial plug of the second layer material within the alignment recess. The sacrificial plug is removed in a manner so as not to substantially roughen the planarized surface at the selected substrate level.

摘要翻译： 用于形成半导体器件的对准标记结构的方法包括在半导体器件衬底的选定电平处形成对准凹槽。 第一金属层形成在所选择的基底层上并且在对准凹槽内，其中对准凹部形成在使得第一金属层仅部分地填充对准凹槽的深度。 在第一金属层上形成第二金属层，使得对准凹部完全填充。 然后将第二金属层和第一金属层平坦化到所选择的基底水平，从而在对准凹槽内产生第二层材料的牺牲塞。 以牺牲基板水平的平坦化表面基本粗糙化的方式除去牺牲塞。

公开(公告)号：US20070212795A1

公开(公告)日：2007-09-13

申请号：US11369391

申请日：2006-03-07

申请人： Keith Milkove ,  Michael Gaidis

发明人： Keith Milkove ,  Michael Gaidis

IPC分类号： H01L21/00

CPC分类号： H01L21/0332 ,  H01L21/02304 ,  H01L21/3083 ,  H01L21/31144 ,  H01L43/12

摘要： A device and method for improving adhesion for thin film layers includes applying a diblock copolymer on a surface where adhesion to subsequent layers is needed and curing the diblock copolymer. Pores are formed in the diblock copolymer by treating the diblock copolymer with a solvent. The surface is etched through the pores of the diblock copolymer to form adhesion promoting features. The diblock copolymer is removed, and a layer is deposited on the surface wherein the adhesion promoting features are employed to promote adhesion between the layer and the surface.

摘要翻译： 用于改善薄膜层粘合性的装置和方法包括在需要与后续层粘合的表面上施加二嵌段共聚物并固化二嵌段共聚物。 通过用溶剂处理二嵌段共聚物，在二嵌段共聚物中形成孔。 通过二嵌段共聚物的孔蚀刻该表面以形成附着促进特征。 去除二嵌段共聚物，并且在表面上沉积一层，其中采用粘附促进特征以促进层与表面之间的粘合。

公开(公告)号：US20070023806A1

公开(公告)日：2007-02-01

申请号：US11193660

申请日：2005-07-29

申请人： Michael Gaidis ,  Carl Radens ,  Lawrence Clevenger ,  Timothy Dalton ,  Louis Hsu ,  Keith Hon Wong ,  Chih-Chao Yang

发明人： Michael Gaidis ,  Carl Radens ,  Lawrence Clevenger ,  Timothy Dalton ,  Louis Hsu ,  Keith Hon Wong ,  Chih-Chao Yang

IPC分类号： H01L29/94

CPC分类号： B82Y10/00 ,  H01L27/222 ,  H01L43/12

摘要： A magnetic random access memory (MRAM) device includes a magnetic tunnel junction (MTJ) stack formed over a lower wiring level, a hardmask formed on the MTJ stack, and an upper wiring level formed over the hardmask. The upper wiring level includes a slot via bitline formed therein, the slot via bitline in contact with the hardmask and in contact with an etch stop layer partially surrounding sidewalls of the hardmask.

摘要翻译： 磁性随机存取存储器（MRAM）器件包括形成在下布线层上的磁隧道结（MTJ）堆叠，形成在MTJ堆叠上的硬掩模和形成在硬掩模上的上布线层。 上布线层包括经由位于其中的位线的槽，槽经由与硬掩模接触的位线并与部分地围绕硬掩模的侧壁的蚀刻停止层接触。

公开(公告)号：US20070013016A1

公开(公告)日：2007-01-18

申请号：US11531821

申请日：2006-09-14

申请人： Michael Gaidis ,  Philip Trouilloud

发明人： Michael Gaidis ,  Philip Trouilloud

IPC分类号： H01L43/00 ,  H01L29/82 ,  G11C11/00

CPC分类号： G11C11/16 ,  G11C11/5607 ,  H01L43/08

摘要： A method for generating an offset field for a magnetic random access memory (MRAM) device includes forming a first pinned layer integrally with a wordline, and forming a second pinned layer integrally with a bitline. An MRAM cell is disposed between the wordline and the bitline, the MRAM cell including a reference layer, an antiparallel free layer and a tunnel barrier therebetween. The first pinned layer is formed with an internal magnetization in a manner so as to create a first external field generally perpendicular to a long axis of the wordline, and the second pinned layer is formed with an internal magnetization in a manner so as to create a second external field generally perpendicular to a long axis of the bitline.

摘要翻译： 用于产生用于磁随机存取存储器（MRAM）装置的偏移场的方法包括与字线一体地形成第一被钉扎层，以及与位线一体地形成第二固定层。 MRAM单元设置在字线和位线之间，MRAM单元包括参考层，反平行自由层和它们之间的隧道屏障。 第一被钉扎层以形成大致垂直于字线的长轴的第一外部场的方式形成内部磁化，并且第二被钉扎层以形成内部磁化的方式形成，以产生 通常垂直于位线的长轴的第二外场。

公开(公告)号：US20060154381A1

公开(公告)日：2006-07-13

申请号：US10905541

申请日：2005-01-10

申请人： Michael Gaidis ,  Philip Trouilloud

发明人： Michael Gaidis ,  Philip Trouilloud

IPC分类号： H01L21/00 ,  G11C11/14 ,  G11C11/15

CPC分类号： G11C11/16 ,  G11C11/5607 ,  H01L43/08

摘要： A method for generating an offset field for a magnetic random access memory (MRAM) device includes forming a first pinned layer integrally with a wordline, and forming a second pinned layer integrally with a bitline. An MRAM cell is disposed between the wordline and the bitline, the MRAM cell including a reference layer, an antiparallel free layer and a tunnel barrier therebetween. The first pinned layer is formed with an internal magnetization in a manner so as to create a first external field generally perpendicular to a long axis of the wordline, and the second pinned layer is formed with an internal magnetization in a manner so as to create a second external field generally perpendicular to a long axis of the bitline.

摘要翻译： 用于产生用于磁随机存取存储器（MRAM）装置的偏移场的方法包括与字线一体地形成第一被钉扎层，以及与位线一体地形成第二固定层。 MRAM单元设置在字线和位线之间，MRAM单元包括参考层，反平行自由层和它们之间的隧道屏障。 第一被钉扎层以形成大致垂直于字线的长轴的第一外部场的方式形成内部磁化，并且第二被钉扎层以形成内部磁化的方式形成，以产生 通常垂直于位线的长轴的第二外场。