公开(公告)号：US08436357B2

公开(公告)日：2013-05-07

申请号：US13067025

申请日：2011-05-03

申请人： Yul-Kyu Lee ,  Sun Park ,  Chun-Gi You ,  Jong-Hyun Park

发明人： Yul-Kyu Lee ,  Sun Park ,  Chun-Gi You ,  Jong-Hyun Park

IPC分类号： H01L29/04

CPC分类号： H01L51/56 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3265

摘要： Making an OLED display, includes forming a first storage plate and a gate insulating layer covering the first storage plate on a substrate; sequentially forming a second storage plate covering the first storage plate and a capacitor intermediate in the gate insulating layer; forming a first doping region by injecting an impurity to a part that is not covered by the capacitor intermediate in the first storage plate; forming an interlayer insulating layer having a capacitor opening exposing the capacitor intermediate, and a plurality of erosion preventing layers on an edge of the capacitor intermediate toward the first doping region in the capacitor opening; removing the capacitor intermediate including the erosion preventing layer and a lower region of the erosion preventing layer, and injecting an impurity in the first storage plate through the second storage plate to form a second doping region contacting the first doping region.

摘要翻译： 制造OLED显示器包括在基板上形成覆盖第一存储板的第一存储板和栅极绝缘层; 顺序地形成覆盖第一存储板的第二存储板和在栅极绝缘层中间的电容器; 通过向第一存储板中未被电容器中间体覆盖的部分注入杂质而形成第一掺杂区; 形成具有使所述电容器中间露出的电容器开口的层间绝缘层，以及在所述电容器开口中的朝向所述第一掺杂区域的电容器的边缘上的多个防蚀蚀层; 去除包括侵蚀防止层的电容器中间件和侵蚀防止层的下部区域，以及通过第二存储板在第一存储板中注入杂质以形成与第一掺杂区域接触的第二掺杂区域。

公开(公告)号：US20110248279A1

公开(公告)日：2011-10-13

申请号：US12929733

申请日：2011-02-11

申请人： Jong-Hyun Park ,  Chun-Gi You ,  Sun Park ,  Jin-Hee Hang ,  Yul-Kyu Lee

发明人： Jong-Hyun Park ,  Chun-Gi You ,  Sun Park ,  Jin-Hee Hang ,  Yul-Kyu Lee

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L51/5281 ,  H01L27/1214 ,  H01L27/1285 ,  H01L27/3262 ,  H01L27/3272 ,  H01L29/66765 ,  H01L29/78678

摘要： A thin film transistor, a method of manufacturing the same, and a display device including the same, the thin film transistor including a substrate; a polysilicon semiconductor layer on the substrate; and a metal pattern between the semiconductor layer and the substrate, the metal pattern being insulated from the semiconductor layer, wherein the polysilicon of the semiconductor layer includes a grain boundary parallel to a crystallization growing direction, and a surface roughness of the polysilicon semiconductor layer defined by a distance between a lowest peak and a highest peak in a surface thereof is less than about 15 nm.

摘要翻译： 薄膜晶体管及其制造方法以及包括该薄膜晶体管的显示装置，所述薄膜晶体管包括基板; 基板上的多晶硅半导体层; 以及在所述半导体层和所述基板之间的金属图案，所述金属图案与所述半导体层绝缘，其中所述半导体层的多晶硅包括平行于结晶生长方向的晶界，并且所述多晶硅半导体层的表面粗糙度被限定 在其表面的最低峰和最高峰之间的距离小于约15nm。

公开(公告)号：US20110140107A1

公开(公告)日：2011-06-16

申请号：US12923599

申请日：2010-09-29

申请人： Jin-Hee Kang ,  Chun-Gi You ,  Sun Park ,  Jong-Hyun Park ,  Yul-Kyu Lee

发明人： Jin-Hee Kang ,  Chun-Gi You ,  Sun Park ,  Jong-Hyun Park ,  Yul-Kyu Lee

IPC分类号： H01L33/18 ,  H01L21/336

CPC分类号： H01L27/3262 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/1288 ,  H01L27/3248 ,  H01L27/326 ,  H01L29/4908

摘要： A flat panel display device including a substrate including first and second regions; an active layer on the first region of the substrate including a semiconductor material; a lower electrode on the second region of the substrate including the semiconductor material; a first insulating layer on the substrate including the active layer and the lower electrode thereon; a gate electrode on the first insulating layer overlying the active layer and including a first conductive layer pattern and a second conductive layer pattern; an upper electrode on the first insulating layer overlying the lower electrode and including the first conductive layer pattern and the second conductive layer pattern; a second insulating layer on the gate electrode and the upper electrode exposing portions of the active layer and portions of the upper electrode; and a source electrode and a drain electrode connected to the exposed portions of the active layer.

摘要翻译： 一种平板显示装置，包括：包括第一和第二区域的基板; 在包括半导体材料的衬底的第一区域上的有源层; 在包括半导体材料的基板的第二区域上的下电极; 在其上的包括有源层和下电极的基板上的第一绝缘层; 覆盖有源层的第一绝缘层上的栅电极，包括第一导电层图案和第二导电层图案; 所述第一绝缘层上的上电极覆盖所述下电极并且包括所述第一导电层图案和所述第二导电层图案; 栅电极上的第二绝缘层和暴露有源层的部分和上电极的部分的上电极; 以及连接到有源层的暴露部分的源电极和漏电极。

公开(公告)号：US20110128490A1

公开(公告)日：2011-06-02

申请号：US12957246

申请日：2010-11-30

申请人： Jong-Hyun Park ,  Chun-Gi You ,  Sun Park ,  Yul-Kyu Lee ,  Jin-Hee Kang

发明人： Jong-Hyun Park ,  Chun-Gi You ,  Sun Park ,  Yul-Kyu Lee ,  Jin-Hee Kang

IPC分类号： G02F1/1333 ,  H01L33/08 ,  H01L33/16

CPC分类号： H01L51/5262 ,  G02F1/1368 ,  H01L27/3258

摘要： A flat panel display device and a method of manufacturing the flat panel display device are disclosed. In one embodiment, the flat panel display device includes: i) a first substrate, ii) an active layer formed over the first substrate, wherein the active layer comprises a source region, a drain region, and a channel region, iii) a gate insulating layer formed on the active layer, iv) a gate electrode formed on the gate insulating layer and over the channel region of the active layer and v) a first interlayer insulating film formed on the gate insulating layer and the gate electrode. The device may further includes 1) a source electrode and a drain electrode electrically connected to the source region and the drain region of the active layer, respectively, through a contact hole, wherein the contact hole is formed in the first interlayer insulating film and the gate insulating layer, 2) a second interlayer insulating film interposed substantially only between i) the first interlayer insulating film and ii) the source electrode and the drain electrode, 3) a passivation layer formed on the first interlayer insulating film and the source electrode and the drain electrode and 4) a pixel electrode electrically connected to the source electrode or the drain electrode through a via-hole formed in the passivation layer.

摘要翻译： 公开了一种平板显示装置及其制造方法。 在一个实施例中，平板显示装置包括：i）第一衬底，ii）形成在第一衬底上的有源层，其中有源层包括源极区，漏极区和沟道区，iii）栅极 形成在有源层上的绝缘层，iv）形成在栅极绝缘层上并在有源层的沟道区上方的栅极，以及v）形成在栅极绝缘层和栅电极上的第一层间绝缘膜。 该器件还可以包括：1）源电极和漏极，分别通过接触孔与有源层的源极区域和漏极区域电连接，其中接触孔形成在第一层间绝缘膜和 栅绝缘层，2）基本上仅介于i）第一层间绝缘膜和ii）源电极和漏电极之间的第二层间绝缘膜，3）形成在第一层间绝缘膜和源电极上的钝化层，以及 漏极电极和4）通过形成在钝化层中的通孔电连接到源电极或漏电极的像素电极。

公开(公告)号：US20110114956A1

公开(公告)日：2011-05-19

申请号：US12943886

申请日：2010-11-10

申请人： Sun Park ,  Chun-Gi You ,  Jong-Hyun Park ,  Jin-Hee Kang ,  Yul-Kyu Lee

发明人： Sun Park ,  Chun-Gi You ,  Jong-Hyun Park ,  Jin-Hee Kang ,  Yul-Kyu Lee

IPC分类号： H01L51/52 ,  H01L51/56

CPC分类号： H01L51/5215 ,  H01L27/3248

摘要： An organic light emitting display apparatus and a method of manufacturing the organic light emitting display apparatus, whereby the manufacturing process is simplified and the electric characteristics of the organic light emitting display apparatus are improved. The organic light emitting display apparatus includes: a gate electrode that includes a first conductive layer including ITO, a second conductive layer on the first conductive layer, a third conductive layer on the second conductive layer and including ITO, and a fourth conductive layer on the third conductive layer and including IZO or AZO; and a pixel electrode formed in the same layer level as the gate electrode and including a first electrode layer that includes ITO, a second electrode layer on the first electrode layer, a third electrode layer on the second electrode layer and including ITO, and a fourth electrode layer on the third electrode layer and including IZO or AZO.

摘要翻译： 一种有机发光显示装置和制造有机发光显示装置的方法，由此简化了制造工艺，并提高了有机发光显示装置的电特性。 有机发光显示装置包括：栅电极，其包括第一导电层，包括ITO，第一导电层上的第二导电层，第二导电层上的第三导电层，包括ITO;以及第四导电层， 第三导电层并且包括IZO或AZO; 和形成为与栅极电极相同的层级的像素电极，并且包括包括ITO的第一电极层，在第一电极层上的第二电极层，在第二电极层上的包括ITO的第三电极层，以及第四电极层 电极层，并且包括IZO或AZO。

公开(公告)号：US20110108848A1

公开(公告)日：2011-05-12

申请号：US12904672

申请日：2010-10-14

申请人： Yul-Kyu Lee ,  Chun-Gi You ,  Sun Park ,  Jong-Hyun Park ,  Jin-Hee Kang

发明人： Yul-Kyu Lee ,  Chun-Gi You ,  Sun Park ,  Jong-Hyun Park ,  Jin-Hee Kang

IPC分类号： H01L51/52 ,  H01L51/56

CPC分类号： H01L27/3262 ,  H01L27/3258

摘要： An organic light emitting display having an active layer of a thin film transistor formed on a substrate, a first conductive layer formed at an edge of the active layer, a first insulation layer formed on the substrate and the first conductive layer, a second conductive layer corresponding to a central area of the active layer formed on the first insulation layer, a fanout lower electrode separated a predetermined distance from the second conductive layer, a pixel electrode, a third conductive layer formed on the second conductive layer, a fanout upper electrode formed on the fanout lower electrode, a second insulation layer formed on the third conductive layer, the fanout upper electrode, and the pixel electrode, and source and drain electrodes contacting the pixel electrode and formed on the second insulation layer.

摘要翻译： 一种有机发光显示器，其具有形成在基板上的薄膜晶体管的有源层，形成在所述有源层的边缘的第一导电层，形成在所述基板上的第一绝缘层和所述第一导电层，第二导电层 对应于形成在第一绝缘层上的有源层的中心区域，与第二导电层分隔预定距离的扇出下电极，像素电极，形成在第二导电层上的第三导电层，形成的扇出上电极 在扇出的下电极上，形成在第三导电层，扇出上电极和像素电极上的第二绝缘层，以及与第二绝缘层形成的源电极和漏极接触的源极和漏极。

公开(公告)号：US08952358B2

公开(公告)日：2015-02-10

申请号：US13211655

申请日：2011-08-17

申请人： Sun Park ,  Chun-Gi You ,  Jong-Hyun Park ,  Jin-Hee Kang ,  Yul Kyu Lee

发明人： Sun Park ,  Chun-Gi You ,  Jong-Hyun Park ,  Jin-Hee Kang ,  Yul Kyu Lee

IPC分类号： H01L51/52 ,  H01L51/00

CPC分类号： H01L51/5284 ,  H01L51/0037

摘要： An organic light-emitting display apparatus including a substrate; a black matrix layer formed over the substrate; an insulating layer formed over the black matrix layer; a thin film transistor (TFT) formed over the insulating layer; a pixel electrode connected to the TFT; and an organic layer formed over the pixel electrode. At least one hole is formed in at least one of the black matrix layer and the insulating layer, in a region where the black matrix layer and the insulating layer overlap each other.

摘要翻译： 一种有机发光显示装置，包括：基板; 形成在基板上的黑矩阵层; 形成在黑矩阵层上的绝缘层; 形成在所述绝缘层上的薄膜晶体管（TFT）; 连接到TFT的像素电极; 以及形成在像素电极上方的有机层。 在黑矩阵层和绝缘层彼此重叠的区域中，在黑矩阵层和绝缘层中的至少一个中形成至少一个孔。

公开(公告)号：US08558239B2

公开(公告)日：2013-10-15

申请号：US12904672

申请日：2010-10-14

申请人： Yul-Kyu Lee ,  Chun-Gi You ,  Sun Park ,  Jong-Hyun Park ,  Jin-Hee Kang

发明人： Yul-Kyu Lee ,  Chun-Gi You ,  Sun Park ,  Jong-Hyun Park ,  Jin-Hee Kang

IPC分类号： H01L27/14

CPC分类号： H01L27/3262 ,  H01L27/3258

摘要： An organic light emitting display having an active layer of a thin film transistor formed on a substrate, a first conductive layer formed at an edge of the active layer, a first insulation layer formed on the substrate and the first conductive layer, a second conductive layer corresponding to a central area of the active layer formed on the first insulation layer, a fanout lower electrode separated a predetermined distance from the second conductive layer, a pixel electrode, a third conductive layer formed on the second conductive layer, a fanout upper electrode formed on the fanout lower electrode, a second insulation layer formed on the third conductive layer, the fanout upper electrode, and the pixel electrode, and source and drain electrodes contacting the pixel electrode and formed on the second insulation layer.

摘要翻译： 一种有机发光显示器，其具有形成在基板上的薄膜晶体管的有源层，形成在所述有源层的边缘的第一导电层，形成在所述基板上的第一绝缘层和所述第一导电层，第二导电层 对应于形成在第一绝缘层上的有源层的中心区域，与第二导电层分隔预定距离的扇出下电极，像素电极，形成在第二导电层上的第三导电层，形成的扇出上电极 在扇出的下电极上，形成在第三导电层，扇出上电极和像素电极上的第二绝缘层，以及与第二绝缘层形成的源电极和漏极接触的源极和漏极。

公开(公告)号：US08395160B2

公开(公告)日：2013-03-12

申请号：US12943886

申请日：2010-11-10

申请人： Sun Park ,  Chun-Gi You ,  Jong-Hyun Park ,  Jin-Hee Kang ,  Yul-Kyu Lee

发明人： Sun Park ,  Chun-Gi You ,  Jong-Hyun Park ,  Jin-Hee Kang ,  Yul-Kyu Lee

IPC分类号： H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036

CPC分类号： H01L51/5215 ,  H01L27/3248

摘要： An organic light emitting display apparatus and a method of manufacturing the organic light emitting display apparatus, whereby the manufacturing process is simplified and the electric characteristics of the organic light emitting display apparatus are improved. The organic light emitting display apparatus includes: a gate electrode that includes a first conductive layer including ITO, a second conductive layer on the first conductive layer, a third conductive layer on the second conductive layer and including ITO, and a fourth conductive layer on the third conductive layer and including IZO or AZO; and a pixel electrode formed in the same layer level as the gate electrode and including a first electrode layer that includes ITO, a second electrode layer on the first electrode layer, a third electrode layer on the second electrode layer and including ITO, and a fourth electrode layer on the third electrode layer and including IZO or AZO.

摘要翻译： 一种有机发光显示装置和制造有机发光显示装置的方法，由此简化了制造工艺，并提高了有机发光显示装置的电特性。 有机发光显示装置包括：栅电极，其包括第一导电层，包括ITO，第一导电层上的第二导电层，第二导电层上的第三导电层，包括ITO;以及第四导电层， 第三导电层并且包括IZO或AZO; 和形成为与栅极电极相同的层级的像素电极，并且包括包括ITO的第一电极层，在第一电极层上的第二电极层，在第二电极层上的包括ITO的第三电极层，以及第四电极层 电极层，并且包括IZO或AZO。

公开(公告)号：US20130037812A1

公开(公告)日：2013-02-14

申请号：US13349440

申请日：2012-01-12

申请人： Jong-Hyun Park ,  Chun-Gi You ,  Sun Park ,  Yul-Kyu Lee ,  Sang-Ho Moon

发明人： Jong-Hyun Park ,  Chun-Gi You ,  Sun Park ,  Yul-Kyu Lee ,  Sang-Ho Moon

IPC分类号： H01L33/08 ,  H01L51/52

CPC分类号： H01L27/3262 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3265 ,  H01L29/4908 ,  H01L51/5212

摘要： A thin-film transistor array substrate is disclosed. In one embodiment, the transistor includes a capacitor including a lower electrode disposed on the same layer as an active layer and an upper electrode disposed on the same layer as a gate electrode. The transistor may also include a first insulating layer disposed between the active layer and the gate electrode and between the lower and upper electrodes, the first insulating layer not being disposed on a perimeter of the lower electrode. The transistor may further include a second insulating layer between the first insulating layer and the source and drain electrodes, the second insulating layer not being disposed on perimeters of the upper and lower electrodes.

摘要翻译： 公开了一种薄膜晶体管阵列基板。 在一个实施例中，晶体管包括电容器，其包括设置在与有源层相同的层上的下电极和设置在与栅电极相同的层上的上电极。 晶体管还可以包括设置在有源层和栅电极之间以及下电极和上电极之间的第一绝缘层，第一绝缘层不设置在下电极的周边上。 晶体管还可以包括在第一绝缘层和源极和漏极之间的第二绝缘层，第二绝缘层不设置在上电极和下电极的周边上。