摘要:
Embodiments of a memory are disclosed that may allow for the detection of weak data storage cells or may allow operation of data storage cells under conditions that may represent the effects of transistor ageing. The memory may include data storage cells, a column multiplexer, a sense amplifier, and a current injector. The current injector may be configured to generate multiple current levels and may be operable to controllably select one of the current levels to either source current to or sink current from the input of the sense amplifier.
摘要:
Embodiments of a memory are disclosed that may allow for the detection and compensation of weak data storage cells. The memory may include data storage cells, a selection circuit, a sense amplifier, and a timing and control block. The timing and control block may be operable to controllably select differing time periods between the activation of the selection circuit and the activation of the sense amplifier.
摘要:
A scannable pulse dynamic logic gate may include an evaluation network that evaluates dynamic inputs in response to assertion of an evaluate pulse. The evaluate pulse may be generated from a clock signal such that it is shorter in duration than the clock signal. During a normal mode of operation, when the evaluate pulse is asserted, the evaluation network may discharge a dynamic node depending on the state of the dynamic inputs. The dynamic node may then drive output device(s). When the evaluate pulse is deasserted, the dynamic node may be precharged. The gate may also include scan input devices, which, during a scan mode of operation, may load scan input data onto the output node in response to assertion of a scan master clock. A storage element of the gate may receive and capture a value of the output node in response to assertion of a slave scan clock.
摘要:
A system and method for reducing power consumption within clock distribution on a semiconductor chip. A 4-phase clock generator within a clock distribution network provides 4 non-overlapping clock signals dependent upon a received input clock. A reduced voltage swing clock generator receives the non-overlapping clock signals and charges and discharges a second set of clock lines in a manner sequenced by the non-overlapping clock signals. The sequencing prevents a voltage range from reaching a magnitude equal to a power supply voltage for each of the second set of clock lines. In one embodiment, the magnitude reaches half of the power supply voltage. The reduced voltage swing latch receives the second set of clock lines. The reduced voltage swing latch updates and maintains logical state based at least upon the received second set of clock lines.
摘要:
Substrate bias control circuitry 100 is provided which includes a bias sensor 101 for measuring a bias voltage of a substrate and generating a control signal and response. A master oscillator 102 is provided for generating a first driving signal, a frequency of the first driving signal adjusted by the control signal generated by the bias sensor 101. A first charge pump 103 is provided for pumping electrons into a substrate in response to the first driving signal. A slave oscillator generates a second driving signal, a frequency of the second driving signal is determined from the frequency of the first driving signal using a phase-locked loop. A second charge pump 105 is provided for pumping electrons into the substrate in response to the second driving signal.
摘要:
A line driver 202 is provided for transmitting signals across a line 201. Line driver 202 receives an input signal having a first voltage swing between a first high voltage level and a first low voltage level. Line driver 202 reduces power dissipation in line 201 by transmitting an output signal on line 201 having a second voltage swing between a second low voltage level greater than the first low voltage level and a second high voltage level less than the first high voltage level.
摘要:
A memory that may allow for the detection of weak data storage cells may include data storage cells, a column multiplexer, a sense amplifier, and a load circuit. The load circuit may include one or more capacitive loads and may be operable to controllably select one or more of the capacitive loads to couple to the input of the sense amplifier.
摘要:
A scannable pulse dynamic logic gate may include an evaluation network that evaluates dynamic inputs in response to assertion of an evaluate pulse. The evaluate pulse may be generated from a clock signal such that it is shorter in duration than the clock signal. During a normal mode of operation, when the evaluate pulse is asserted, the evaluation network may discharge a dynamic node depending on the state of the dynamic inputs. The resultant state of the dynamic node may be stored within an output storage element. When the evaluate pulse is deasserted, the dynamic node may be precharged. During a scan mode of operation, the dynamic node may remain precharged. Scan data may be transferred to the output storage element under the control of scan-related control signals.
摘要:
Circuitry 200 is provided for transmitting data between a first endpoint and a second endpoint and includes an information line 201 and a dummy line 205. Information transmission circuitry 202, 203, 204 is disposed at the first endpoint for transmitting information on information line 201, transmission circuitry 202, 203, 204 pulling information line 201 to a low voltage during transmission of information of a first logic state and charging information line 201 to a higher voltage during transmission of information of a second logic state. Charging circuitry 206, 207, 208 is disposed at the first endpoint for charging dummy line 205 to a reference voltage during transmission of information on information line 201, charging circuitry 206, 207, 208 charging dummy line 205 at a rate different from a rate at which transmission circuitry 202, 203, 204 charges information line 201 during transmission of information of the second logic state. Receiving circuitry 209 is disposed at the second endpoint for detecting a voltage difference between information line 201 and dummy line 205 and in response determining the logic state of transmitted data on information line 201.
摘要:
Systems and methods for testing ASIC and RAM memory devices are disclosed. The method comprises determining a signature map of valid power supply current values for a known good microcircuit wherein each valid power supply current value is measured at a fixed level of power supply voltage and corresponds to a unique test input stimuli pattern applied to the known good microcircuit. The signature map of power supply current values is stored in an electronic memory (300). The test input stimuli patterns are then applied to an unproven microcircuit (330) and the power supply current of the unproven microcircuit is forced to the levels stored in the signature map by a current supply (360) while the voltages across the power supply inputs of the unproven microcircuit are measured by a voltmeter (340). The measured power supply voltages for each power supply current value are then compared to the fixed voltage supply level used to test the known good microcircuit. The unproven microcircuit is faulted if any measured power supply voltage of the unproven microcircuit differs substantially from the fixed power supply voltage applied to the known good microcircuit.