公开(公告)号：US06423797B1

公开(公告)日：2002-07-23

申请号：US09603561

申请日：2000-06-23

申请人： Sung-Eun Hong ,  Min-Ho Jung ,  Ki-Ho Baik

发明人： Sung-Eun Hong ,  Min-Ho Jung ,  Ki-Ho Baik

IPC分类号： C08F206

CPC分类号： C07C303/28 ,  C08F120/58 ,  G03F7/091 ,  C07C309/73

摘要： The present invention relates to organic anti-reflective coating polymers suitable for use in manufacturing a semiconductor device using a photolithography process for forming ultrafine-patterns with a 193 nm ArF beam, and preparation methods therefor. Anti-reflective coating polymers of the present invention contain a monomer having a phenyl group and amide linkage with high light absorbency at the 193 nm wavelength. When the polymers of the present invention are used in an anti-reflective coating in a photolithography process for forming ultrafine-patterns, the polymers eliminate the standing waves caused by changes in the thickness of the photoresist layer, by the spectroscopic property of the lower layers of the semiconductor wafer and by changes in CD due to diffractive and reflective light originating from the lower layer, thereby resulting in the stable formation of ultrafine-patters suitable for 64 M, 256 M, 1 G, 4 G and 16 G DRAM semiconductor devices and a great improvement in the production yield. The present invention also relates to anti-reflective compositions containing these polymers, anti-reflective coatings formed from these compositions and semiconductor devices containing these anti-reflective coatings, as well as preparation methods therefor.

摘要翻译： 本发明涉及适用于使用光刻工艺制造半导体器件的有机抗反射涂层聚合物，用于形成具有193nm ArF光束的超细纹图案及其制备方法。 本发明的抗反射涂层聚合物在193nm波长处含有具有高吸光度的苯基和酰胺键的单体。 当本发明的聚合物在用于形成超细图案的光刻工艺中的抗反射涂层中使用时，聚合物通过下层的光谱特性消除了由光致抗蚀剂层的厚度变化引起的驻波 的半导体晶片以及由于来自下层的衍射和反射光引起的CD的变化，从而导致适合于64M，256M，1G，4G和16G DRAM半导体器件的超微图案的稳定形成 本发明还涉及含有这些聚合物的抗反射组合物，由这些组合物形成的抗反射涂层和含有这些抗反射涂层的半导体装置，以及其制备方法。

公开(公告)号：US06395397B2

公开(公告)日：2002-05-28

申请号：US09746749

申请日：2000-12-22

申请人： Sung-Eun Hong ,  Min-Ho Jung ,  Ki-Ho Baik

发明人： Sung-Eun Hong ,  Min-Ho Jung ,  Ki-Ho Baik

IPC分类号： B32B2738

CPC分类号： C08F220/30 ,  Y10S430/111 ,  Y10S430/151 ,  Y10T428/31511

摘要： The present invention provides an anti-reflective coating polymer, an anti-reflective coating (ARC) composition comprising the same, methods for producing the same, and methods for using the same. The anti-reflective coating polymer of the present invention are particularly useful in a submicrolithographic process, for example, using ArF (193 nm) laser as a light source. The ARC of the present invention significantly reduces or prevents back reflection of light and the problem of the CD alteration caused by the diffracted and/or reflected light. The ARC of the present invention also significantly reduces or eliminates the standing wave effect and reflective notching. Thus, the use of ARC of the present invention results in formation of a stable ultrafine pattern that is suitable in manufacturing of 1G, and 4G DRAM semiconductor devices. Moreover, the ARC of the present invention significantly improves the production yield of such semiconductor devices.

摘要翻译： 本发明提供了一种抗反射涂层聚合物，包含其的抗反射涂层（ARC）组合物，其制备方法及其使用方法。 本发明的抗反射涂层聚合物在亚微光刻工艺中特别有用，例如使用ArF（193nm）激光作为光源。 本发明的ARC显着地减少或防止光的反射反射和由衍射光和/或反射光引起的CD改变的问题。 本发明的ARC还显着地减少或消除驻波效应和反射性切口。 因此，使用本发明的ARC导致形成适合于制造1G和4G DRAM半导体器件的稳定的超细格局。 此外，本发明的ARC显着提高了这种半导体器件的生产成本。

公开(公告)号：US20100324330A1

公开(公告)日：2010-12-23

申请号：US12853640

申请日：2010-08-10

申请人： Yasushi Akiyama ,  Yusuke Takano ,  Kiyohisa Takahashi ,  Sung-Eun Hong ,  Tetsuo Okayasu

发明人： Yasushi Akiyama ,  Yusuke Takano ,  Kiyohisa Takahashi ,  Sung-Eun Hong ,  Tetsuo Okayasu

IPC分类号： C07C309/02 ,  C07C53/21 ,  C07C55/14

CPC分类号： G03F7/11 ,  G03F7/168

摘要： The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a C1 to C4 alkanolamine salt of C4 to C15 perfluoroalkylcarboxylic acid, C4 to C10 perfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed. By this process, compared with the case of not using the composition for preventing development-defects, the amount of reduction in film thickness of the photoresist subsequent to development treatment is made further bigger by 100 Å to 600 Å, and the development-defects on a substrate having a diameter of 8 inches or more is reduced as well as a resist pattern having a good cross section form can be formed without T-top form etc.

摘要翻译： （1）C4〜C15全氟烷基羧酸，C4〜C10全氟烷基磺酸和全氟己二酸的铵盐，四烷基铵盐或C1〜C4链烷醇胺盐，或（2）氟化烷基季铵 无机酸的盐，其中所述表面活性剂以相对于酸与碱的比例为1:1-1:3的比例形成在直径为8英寸或更大的基材上的化学放大的光致抗蚀剂涂层上。 在施加用于防止上述显影缺陷的组合物之前和/或之后烘烤化学放大的光致抗蚀剂涂层。 然后，将具有显影缺陷防止组合物涂层的烘烤涂层曝光，曝光后烘烤和显影。 通过该方法，与不使用用于防止显影缺陷的组合物的情况相比，显影处理后的光致抗蚀剂的膜厚减少量进一步大于100埃至600埃，并且显影缺陷在 直径为8英寸以上的基板减少，并且可以形成具有良好横截面形状的抗蚀剂图案而不具有T形顶端形式等。

公开(公告)号：US20050221236A1

公开(公告)日：2005-10-06

申请号：US10518105

申请日：2003-06-10

申请人： Yasushi Akiyama ,  Yusuke Takano ,  Kiyohisa Takahashi ,  Sung-Eun Hong ,  Tetsuo Okayasu

发明人： Yasushi Akiyama ,  Yusuke Takano ,  Kiyohisa Takahashi ,  Sung-Eun Hong ,  Tetsuo Okayasu

IPC分类号： G03F7/11 ,  G03F7/16 ,  G03F7/38 ,  H01L21/027 ,  G03F7/40

CPC分类号： G03F7/11 ,  G03F7/168

摘要： The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a C1 to C4 alkanolamine salt of C4 to C15 perfluoroalkylcarboxylic acid, C4 to C10 perfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed. By this process, compared with the case of not using the composition for preventing development-defects, the amount of reduction in film thickness of the photoresist subsequent to development treatment is made further bigger by 100 Å to 600 Å, and the development-defects on a substrate having a diameter of 8 inches or more is reduced as well as a resist pattern having a good cross section form can be formed without T-top form etc.

摘要翻译： 用于防止含有（1）C 4的铵盐，四烷基铵盐或C 1〜C 4烷醇胺盐的显影缺陷的组合物 的全氟烷基羧酸，C 4〜C 10全氟烷基磺酸和全氟己二酸，或（2）氟代烷基季铵盐 无机酸，其中所述表面活性剂以相对于酸与碱的比例为1:1:1:3的比例形成在直径为8英寸或更大的基材上的化学放大的光致抗蚀剂涂层上。 在施加用于防止上述显影缺陷的组合物之前和/或之后烘烤化学放大的光致抗蚀剂涂层。 然后，将具有显影缺陷防止组合物涂层的烘烤涂层曝光，曝光后烘烤和显影。 通过该方法，与不使用用于防止显影缺陷的组合物的情况相比，显影处理后的光致抗蚀剂的膜厚减少量进一步大于100埃至600埃，并且显影缺陷在 直径为8英寸以上的基板减少，并且可以形成具有良好横截面形状的抗蚀剂图案而不具有T形顶端形式等。

公开(公告)号：US20070134151A1

公开(公告)日：2007-06-14

申请号：US11607520

申请日：2006-12-01

申请人： Seong-Mu Jo ,  Dong-Young Kim ,  Byung-Doo Chin ,  Sung-Eun Hong

发明人： Seong-Mu Jo ,  Dong-Young Kim ,  Byung-Doo Chin ,  Sung-Eun Hong

IPC分类号： C01B31/04 ,  D01F9/12

CPC分类号： D01F9/21 ,  C01B32/382 ,  D01D5/0007 ,  D01F1/10 ,  D01F6/10 ,  D01F6/12 ,  D01F6/32 ,  H01M4/587 ,  H01M4/625 ,  H01M4/9083 ,  H01M4/926 ,  H01M4/96

摘要： The present invention discloses an ultrafine graphitic carbon fiber and a preparation method thereof. An ultrafine fiber having a diameter of 1 to 3000 nm is prepared by electrospinning a halogenated polymer solution containing a metal compound inducing graphitization. In carbonization, an ultrafine porous graphitic carbon fiber having a large specific surface area, micropores and macropores is prepared by the graphitization by a metal catalyst generated from the metal compound. The ultrafine carbon fiber can be used as a carbon material for storing hydrogen, an adsorbing material of biochemically noxious substances, an electrode material of a supercapacitor, a secondary cell and a fuel cell, and a catalyst carrier material.

摘要翻译： 本发明公开了一种超细石墨碳纤维及其制备方法。 通过静电纺丝含有引起石墨化的金属化合物的卤化聚合物溶液制备直径为1至3000nm的超细纤维。 在碳化中，通过由金属化合物生成的金属催化剂的石墨化制备具有大比表面积的超细多孔石墨碳纤维，微孔和大孔。 超细碳纤维可以用作储存氢的碳材料，生化有害物质的吸附材料，超级电容器的电极材料，二次电池和燃料电池以及催化剂载体材料。

公开(公告)号：US07887772B2

公开(公告)日：2011-02-15

申请号：US11607520

申请日：2006-12-01

申请人： Seong-Mu Jo ,  Dong-Young Kim ,  Byung-Doo Chin ,  Sung-Eun Hong

发明人： Seong-Mu Jo ,  Dong-Young Kim ,  Byung-Doo Chin ,  Sung-Eun Hong

IPC分类号： D01F9/12

CPC分类号： D01F9/21 ,  C01B32/382 ,  D01D5/0007 ,  D01F1/10 ,  D01F6/10 ,  D01F6/12 ,  D01F6/32 ,  H01M4/587 ,  H01M4/625 ,  H01M4/9083 ,  H01M4/926 ,  H01M4/96

摘要： The present invention discloses an ultrafine graphitic carbon fiber and a preparation method thereof. An ultrafine fiber having a diameter of 1 to 3000 nm is prepared by electrospinning a halogenated polymer solution containing a metal compound inducing graphitization. In carbonization, an ultrafine porous graphitic carbon fiber having a large specific surface area, micropores and macropores is prepared by the graphitization by a metal catalyst generated from the metal compound. The ultrafine carbon fiber can be used as a carbon material for storing hydrogen, an adsorbing material of biochemically noxious substances, an electrode material of a supercapacitor, a secondary cell and a fuel cell, and a catalyst carrier material.

摘要翻译： 本发明公开了一种超细石墨碳纤维及其制备方法。 通过静电纺丝含有引起石墨化的金属化合物的卤化聚合物溶液制备直径为1至3000nm的超细纤维。 在碳化中，通过由金属化合物生成的金属催化剂的石墨化制备具有大比表面积的超细多孔石墨碳纤维，微孔和大孔。 超细碳纤维可以用作储存氢的碳材料，生化有害物质的吸附材料，超级电容器的电极材料，二次电池和燃料电池以及催化剂载体材料。

公开(公告)号：US07335464B2

公开(公告)日：2008-02-26

申请号：US10546334

申请日：2004-02-16

申请人： Yusuke Takano ,  Sung-Eun Hong

发明人： Yusuke Takano ,  Sung-Eun Hong

IPC分类号： G03F7/039 ,  G03F7/40

CPC分类号： G03F7/40 ,  Y10S430/115 ,  Y10S430/165

摘要： A water-soluble resin composition of the present invention comprises at least a water-soluble resin, an acid generator capable of generating an acid by heating and a solvent containing water. The water-soluble resin composition is applied on a highly water-repellant resist pattern 3 formed by a resist such as an ArF-responsive radiation sensitive resin composition on a substrate 1 to form a coated layer 4 thereon. The resist pattern 3 and the coated layer 4 are heat-treated to form a developer-insoluble modified coated layer 5 in the vicinity of a surface of the resist pattern 3. The coated layer is developed and the resist pattern thickened by the modified layer 5 is formed. The modified layer is a layer with sufficient thickness and is able to be formed with a high dimensional controllability in a highly water-repellant resist pattern such as ArF-responsive radiation sensitive resin composition. As a result, a separation size and a hole aperture size of the resist pattern are reduced effectively to less than a limit resolution. As the modified layer 5 has a function of a protecting film for the resist pattern upon electron beam irradiation, a size measurement fluctuation of a resist pattern upon electron beam irradiation by a size measuring SEM can be prevented.

摘要翻译： 本发明的水溶性树脂组合物至少包含水溶性树脂，能够通过加热产生酸的酸发生剂和含有水的溶剂。 将水溶性树脂组合物涂布在由抗蚀剂如ArF响应性辐射敏感性树脂组合物形成的高度防水抗蚀剂图案3上，在基材1上形成涂层4。 抗蚀剂图案3和涂层4被热处理以在抗蚀剂图案3的表面附近形成显影剂不溶性改性涂层5。 显影涂层，形成由改性层5增厚的抗蚀剂图案。 改性层是具有足够厚度的层，并且能够在诸如ArF响应性辐射敏感性树脂组合物的高度防水抗蚀剂图案中形成具有高尺寸可控性。 结果，抗蚀剂图案的分离尺寸和孔径尺寸被有效地降低到小于限定分辨率。 由于改性层5具有电子束照射时抗蚀剂图案的保护膜的功能，因此可以防止通过尺寸测量SEM的电子束照射时的抗蚀剂图案的尺寸测量波动。

公开(公告)号：US20060160015A1

公开(公告)日：2006-07-20

申请号：US10546334

申请日：2004-02-16

申请人： Yusuke Takano ,  Sung-Eun Hong

发明人： Yusuke Takano ,  Sung-Eun Hong

IPC分类号： G03C1/76

CPC分类号： G03F7/40 ,  Y10S430/115 ,  Y10S430/165

摘要： A water-soluble resin composition of the present invention comprises at least a water-soluble resin, an acid generator capable of generating an acid by heating and a solvent containing water. The water-soluble resin composition is applied on a highly water-repellant resist pattern 3 formed by a resist such as an ArF-responsive radiation sensitive resin composition on a substrate 1 to form a coated layer 4 thereon. The resist pattern 3 and the coated layer 4 are heat-treated to form a developer-insoluble modified coated layer 5 in the vicinity of a surface of the resist pattern 3. The coated layer is developed and the resist pattern thickened by the modified layer 5 is formed. The modified layer is a layer with sufficient thickness and is able to be formed with a high dimensional controllability in a highly water-repellant resist pattern such as ArF-responsive radiation sensitive resin composition. As a result, a separation size and a hole aperture size of the resist pattern are reduced effectively to less than a limit resolution. As the modified layer 5 has a function of a protecting film for the resist pattern upon electron beam irradiation, a size measurement fluctuation of a resist pattern upon electron beam irradiation by a size measuring SEM can be prevented.

摘要翻译： 本发明的水溶性树脂组合物至少包含水溶性树脂，能够通过加热产生酸的酸发生剂和含有水的溶剂。 将水溶性树脂组合物涂布在由抗蚀剂如ArF响应性辐射敏感性树脂组合物形成的高度防水抗蚀剂图案3上，在基材1上形成涂层4。 抗蚀剂图案3和涂层4被热处理以在抗蚀剂图案3的表面附近形成显影剂不溶性改性涂层5.涂层被显影，并且由改性层5增厚的抗蚀剂图案 形成了。 改性层是具有足够厚度的层，并且能够在诸如ArF响应性辐射敏感性树脂组合物的高度防水抗蚀剂图案中形成具有高尺寸可控性。 结果，抗蚀剂图案的分离尺寸和孔径尺寸被有效地降低到小于限定分辨率。 由于改性层5具有电子束照射时抗蚀剂图案的保护膜的功能，因此可以防止通过尺寸测量SEM的电子束照射时的抗蚀剂图案的尺寸测量波动。

公开(公告)号：US07799513B2

公开(公告)日：2010-09-21

申请号：US10518105

申请日：2003-06-10

申请人： Yasushi Akiyama ,  Yusuke Takano ,  Kiyohisa Takahashi ,  Sung-Eun Hong ,  Tetsuo Okayasu

发明人： Yasushi Akiyama ,  Yusuke Takano ,  Kiyohisa Takahashi ,  Sung-Eun Hong ,  Tetsuo Okayasu

IPC分类号： G03F7/00

CPC分类号： G03F7/11 ,  G03F7/168

摘要： The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a C1 to C4 alkanolamine salt of C4 to C15 perfluoroalkylcarboxylic acid, C4 to C10 perfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed. By this process, compared with the case of not using the composition for preventing development-defects, the amount of reduction in film thickness of the photoresist subsequent to development treatment is made further bigger by 100 Å to 600 Å, and the development-defects on a substrate having a diameter of 8 inches or more is reduced as well as a resist pattern having a good cross section form can be formed without T-top form etc.

摘要翻译： （1）C4〜C15全氟烷基羧酸，C4〜C10全氟烷基磺酸和全氟己二酸的铵盐，四烷基铵盐或C1〜C4烷醇胺盐的预防显影缺陷用组合物，或（2）氟化烷基季铵 无机酸的盐，其中所述表面活性剂以相对于酸与碱的比例为1:1-1:3的比例形成在直径为8英寸或更大的基材上的化学放大的光致抗蚀剂涂层上。 在施加用于防止上述显影缺陷的组合物之前和/或之后烘烤化学放大的光致抗蚀剂涂层。 然后，将具有显影缺陷防止组合物涂层的烘烤涂层曝光，曝光后烘烤和显影。 通过该方法，与不使用用于防止显影缺陷的组合物的情况相比，显影处理后的光致抗蚀剂的膜厚减少量进一步大于100埃至600埃，并且显影缺陷在 直径为8英寸以上的基板减少，并且可以形成具有良好横截面形状的抗蚀剂图案而不具有T形顶端形式等。

公开(公告)号：US20100119717A1

公开(公告)日：2010-05-13

申请号：US12451150

申请日：2008-05-01

申请人： Sung-Eun Hong ,  Yusuke Takano ,  Wen-Bing Kang

发明人： Sung-Eun Hong ,  Yusuke Takano ,  Wen-Bing Kang

IPC分类号： B05D3/00 ,  C08K5/17

CPC分类号： H01L21/0271 ,  G03F7/40 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/3088

摘要： A process which comprises applying a water-soluble resin composition comprising a water-soluble vinyl resin, a compound having at least two amino groups in the molecule, a solvent, and, if necessary, an additive such as a surfactant on a resist pattern (2) formed on a substrate (1) to form a water-soluble resin film (3) , modifying part of the water-soluble resin film adjacent to the resist pattern through mixing to form a water-insolubilized layer (4) which cannot be removed by water washing on the surface of the resist pattern, and removing unmodified part of the water-soluble resin film by water washing and which enables the effective scale-down of separation size and hole opening size of a resist pattern to a level finer than the limit of resolution of the wave length of exposure. It is preferable to use as the water-soluble vinyl resin a homopolymer of a nitrogen-containing vinyl monomer such as acrylamine, vinylpyrrolidone or vinylimidazole, a copolymer of two or more nitrogen-containing vinyl monomers, or a copolymer of at least one nitrogen-containing vinyl monomer and at least one nitrogen-free vinyl monomer.

摘要翻译： 一种方法，其包括将包含水溶性乙烯基树脂的水溶性树脂组合物，分子中具有至少两个氨基的化合物，溶剂和必要时在抗蚀图案上添加表面活性剂等添加剂 2）形成在基板（1）上以形成水溶性树脂膜（3），通过混合将与抗蚀剂图案相邻的水溶性树脂膜的一部分进行改性以形成不可溶的水不溶层（4） 通过在抗蚀剂图案的表面上进行水洗除去，并且通过水洗除去未改性的水溶性树脂膜的部分，并且能够将抗蚀剂图案的分离尺寸和开孔尺寸有效地缩小到比 曝光波长分辨率的极限。 作为水溶性乙烯基树脂，优选使用丙烯酰胺，乙烯基吡咯烷酮或乙烯基咪唑等含氮乙烯基单体的均聚物，两种以上含氮乙烯基单体的共聚物，或至少一种含氮乙烯基单体的共聚物， 含有乙烯基单体和至少一种无氮乙烯基单体。