摘要:
A process which comprises applying a water-soluble resin composition comprising a water-soluble vinyl resin, a compound having at least two amino groups in the molecule, a solvent, and, if necessary, an additive such as a surfactant on a resist pattern (2) formed on a substrate (1) to form a water-soluble resin film (3) , modifying part of the water-soluble resin film adjacent to the resist pattern through mixing to form a water-insolubilized layer (4) which cannot be removed by water washing on the surface of the resist pattern, and removing unmodified part of the water-soluble resin film by water washing and which enables the effective scale-down of separation size and hole opening size of a resist pattern to a level finer than the limit of resolution of the wave length of exposure. It is preferable to use as the water-soluble vinyl resin a homopolymer of a nitrogen-containing vinyl monomer such as acrylamine, vinylpyrrolidone or vinylimidazole, a copolymer of two or more nitrogen-containing vinyl monomers, or a copolymer of at least one nitrogen-containing vinyl monomer and at least one nitrogen-free vinyl monomer.
摘要:
A detecting apparatus capable of supporting even narrow wire widths and of detecting defects of wires in a non-contact manner is provided. The detecting apparatus comprises an optical sensor, a sensor head, and a signal processing unit. The optical sensor comprises a transparent substrate, a transparent electrode disposed on the transparent substrate, a thin film of a polymer non-linear optical material disposed on the transparent electrode, and a reflective film disposed on the thin film, and is positioned in close approximation to and without contacting an electrode to be measured on the wiring board. The sensor head comprises a light source, optical means for guiding light from the light source into the optical sensor, and detecting means for detecting reflected light from the optical sensor. The detecting means supplies the signal processing unit with a signal corresponding to the intensity of the reflected light when the electrode on the wiring board is applied with a voltage.
摘要:
A composition for forming a radiation absorbing coating which comprises an organic solvent, a radiation absorbing polymer or a radiation absorbing material dissolved therein and a crosslinking agent having blocked isocyanate groups. Since the isocyanate groups of the crosslinking agent have been blocked, the composition containing the crosslinking agent has excellent storage stability. When the composition applied to a substrate and then baked, crosslinking proceeds to give an antireflective coating, which does not intermix with a resist layer to be formed thereon by coating and is free from diffusion of a photo-generated acid thereinto from the resist layer. As a result, a resist image free from footing or scum can be formed.
摘要:
An organic electroluminescent device comprising an anode, an organic hole transport layer, an organic emission layer and a cathode layered in this order on a substrate, or, optionally, comprising an additional electron transport layer between the organic emission layer and the cathode, wherein the organic emission layer comprises a naphthalimide derivative represented by formula (1) wherein R.sup.1 is a hydrogen atom, a straight chain or branched chain alkyl group having from 1 to 16 carbon atoms, an aryl group which may have substituents or an aralkyl group which may have substituents, and R.sup.2, R.sup.3, R.sup.4 are special substituents. ##STR1##
摘要:
The present invention provides a composition for forming a fine pattern with high dry etching resistance and a method for forming the fine pattern. The composition for fine pattern formation containing: a resin containing a repeating unit having a silazane bond; and a solvent as well as a method for fine pattern formation using the same.
摘要:
A composition for an anti-reflective coating or a radiation absorbing coating which can form an anti-reflective coating or a radiation absorbing coating having high absorption to exposed radiation in the range of 100 to 450 nm, no diffusion of photo-generated acid to anti-reflective coating and so on, no intermixing of resist and anti-reflective coating layer, good shelf-life stability, and good step coverage and novel compounds and polymers being preferably used in the composition are disclosed. The composition contains an acrylic or methacrylic compound or polymer with an isocyanate or thioisocyanate group bonded through an alkylene group to a side chain thereof or with an amino or hydroxyl group-containing organic chromophore which absorbs radiation in the range of 100 to 450 nm wavelength and is bonded, for example, through an alkylene group to the isocyanate or thioisocyanate group. Resist patters with high resolution are formed on a substrate. A composition for an anti-reflective coating or a radiation absorbing coating are applied on the substrate and baked to form an anti-reflective coating or a radiation absorbing coating layer. Then, a chemically amplified resist is coated thereon and after patternwize exposure, developed. During baking of the anti-reflective coating or radiation absorbing coating, hardening or curing of the coating takes place by the presence of the isocyanate or thioisocyanate group. On the other hand, the exposed radiation having wavelength in the range of 100 to 450 nm is absorbed by organic chromophore.
摘要:
A composition for forming a radiation absorbing coating which comprises an organic solvent, a radiation absorbing polymer or a radiation absorbing material dissolved therein and a crosslinking agent having blocked isocyanate groups. Since the isocyanate groups of the crosslinking agent have been blocked, the composition containing the crosslinking agent has excellent storage stability. When the composition applied to a substrate and then baked, crosslinking proceeds to give an antireflective coating, which does not intermix with a resist layer to be formed thereon by coating and is free from diffusion of a photo-generated acid thereinto from the resist layer. As a result, a resist image free from footing or scum can be formed.
摘要:
A high-performance anti-reflective coating which highly absorbs a given light, e.g., deep ultraviolet rays, tenaciously adheres to substrates upon coating formation, is satisfactory in covering, and eliminates the influence of standing waves in the production of integrated circuits; novel light-absorbing polymers for forming the anti-reflective coating; and a process for producing the polymers. One of the polymers is produced by esterifying a copolymer comprising carboxylic anhydride groups and/or dicarboxylic acid groups such as maleic acid as basic recurring units with a hydroxylated aromatic chromophore. The unreacted carboxylic acid groups or acid anhydride groups remaining in the esterified light-absorbing polymer may be amidated and/or imidized with an aminated aromatic compound. Each of these polymers is dissolved in an organic solvent comprising an alcohol, aromatic hydrocarbon, ketone, ester, or combination of these, and the solution is applied to a substrate and then baked to form an anti-reflective coating.
摘要:
A polymer containing triazine rings that has a molecular weight of 5,000-1,000,000 and that comprises a recurring unit represented by the general formula (I): ##STR1## wherein X.sup.1 and X.sup.2 are each independently S, NR.sup.1 (R is a hydrogen atom, an alkyl group or an aryl group) or O; Y may be an alkylene group, a divalent substituted or unsubstituted aromatic ring group that do not contain chromophore moieties or a group in which said aromatic ring groups are bonded or condensed together; Z is either a spacer group comprising a group represented by --G--(CH.sub.2).sub.n -- (n is an integer of 1-10) or a direct bond (G is S, NR.sup.4 or O, and R.sup.4 is a hydrogen atom, an alkyl group or an aryl group); and A is an organic chromophore moiety in which an electron donative group and an electron attractive group are conjugated via a .pi.-electron system. The polymer is lightproof, forms a thin film of high quality and has a high glass transition point.
摘要:
A process for forming a pattern which comprises irradiating with light a film of a poly(arylenevinylene) polymer represented by the following formula (I) —(Ar—CR1=CR2)n— (I) wherein Ar is a substituted or unsubstituted divalent aromatic hydrocarbon group or a substituted or unsubstituted divalent heterocyclic ring group, and the aromatic hydrocarbon group and the heterocyclic ring group may be a fused ring, R1, R2 independently of each other, are H, CN, alkyl, alkoxy are substituted or unsubstituted aromatic hydrocarbon groups or substituted or unsubstituted aromatic heterocycles, which may both be fused rings, and n is an integer of 2 or more. It is preferred that either R1 or R2 is H and more preferred that both R1 and R2 are H.