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公开(公告)号：US20220406741A1
公开(公告)日：2022-12-22
申请号：US17875291
申请日：2022-07-27
发明人： Ching-Yu CHANG , Ming-Da CHENG , Ming-Hui WENG
摘要： A method of manufacturing a bump structure includes forming a passivation layer over a substrate. A metal pad structure is formed over the substrate, wherein the passivation layer surrounds the metal pad structure. A polyimide layer including a polyimide is formed over the passivation layer and the metal pad structure. A metal bump is formed over the metal pad structure and the polyimide layer. The polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine comprises one selected from the group consisting of a cycloalkane, a fused ring, a bicycloalkane, a tricycloalkane, a bicycloalkene, a tricycloalkene, a spiroalkane, and a heterocyclic ring.
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公开(公告)号：US20240310735A1
公开(公告)日：2024-09-19
申请号：US18675505
申请日：2024-05-28
发明人： Ming-Hui WENG , Ching-Yu CHANG
IPC分类号： G03F7/40 , G03F1/56 , G03F7/039 , H01L21/027
CPC分类号： G03F7/40 , G03F1/56 , G03F7/0392 , H01L21/0274
摘要： A lithography method is described. The method includes forming a resist layer over a substrate, performing a treatment on the resist layer to form an upper portion of the resist layer having a first molecular weight and a lower portion of the resist layer having a second molecular weight less than the first molecular weight, performing an exposure process on the resist layer, and performing a developing process on the resist layer to form a patterned resist layer.
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公开(公告)号：US20230384669A1
公开(公告)日：2023-11-30
申请号：US18447568
申请日：2023-08-10
发明人： Ming-Hui WENG , Yahru CHENG , Ching-Yu CHANG
IPC分类号： G03F7/004 , H01L21/027
CPC分类号： G03F7/0042 , H01L21/0276 , G03F7/38
摘要： Photoresist materials described herein may include various types of tin (Sn) clusters having one or more types of ligands. As an example, a photoresist material described herein may include tin clusters bearing two or more different types of carboxylate ligands. As another example, a photoresist material described herein may include tin oxide clusters that include carbonate ligands. The two or more different types of carboxylate ligands and the carbonate ligands may reduce, minimize, and/or prevent crystallization of the photoresist materials described herein, which may increase the coating performance of the photoresist materials and may decrease the surface roughness of photoresist layers formed using the photoresist materials described herein.
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公开(公告)号：US20220299879A1
公开(公告)日：2022-09-22
申请号：US17206112
申请日：2021-03-18
发明人： Ming-Hui WENG , Ching-Yu CHANG
IPC分类号： G03F7/40 , G03F1/56 , G03F7/039 , H01L21/027
摘要： A lithography method is described. The method includes forming a resist layer over a substrate, performing a treatment on the resist layer to form an upper portion of the resist layer having a first molecular weight and a lower portion of the resist layer having a second molecular weight less than the first molecular weight, performing an exposure process on the resist layer, and performing a developing process on the resist layer to form a patterned resist layer.
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公开(公告)号：US20220291586A1
公开(公告)日：2022-09-15
申请号：US17486223
申请日：2021-09-27
发明人： Ming-Hui WENG , Chen-Yu LIU , Ching-Yu CHANG
摘要： A method for manufacturing a semiconductor device includes forming a resist underlayer over a substrate. The resist underlayer includes an underlayer composition, including: a polymer with pendant photoacid generator (PAG) groups, pendant thermal acid generator (TAG) groups, a combination of pendant PAG and pendant TAG groups, pendant photobase generator (PBG) groups, pendant thermal base generator (TBG) groups, or a combination of pendant PBG and pendant TBG groups. A photoresist layer including a photoresist composition is formed over the resist underlayer. The photoresist layer is selectively exposed to actinic radiation. The selectively exposed photoresist layer is developed to form a pattern in the photoresist layer.
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公开(公告)号：US20220005687A1
公开(公告)日：2022-01-06
申请号：US17316221
申请日：2021-05-10
发明人： Chih-Cheng LIU , Ming-Hui WENG , Jr-Hung LI , Yahru CHENG , Chi-Ming YANG , Tze-Liang LEE , Ching-Yu CHANG
IPC分类号： H01L21/027 , C23C16/04
摘要： In a pattern formation method, a photoresist layer is formed over a substrate by combining a first precursor and a second precursor in a vapor state to form a photoresist material. The first precursor is an organometallic having a formula MaRbXc, where M is one or more selected from the group consisting of Sn, Bi, Sb, In, and Te, R is an alkyl group that is substituted by different EDG and/or EWG, X is a halide or sulfonate group, and 1≤a≤2, b≥1, c≥1, and b+c≤4. The second precursor is water, an amine, a borane, and/or a phosphine. The photoresist material is deposited over the substrate, and selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.
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公开(公告)号：US20210286269A1
公开(公告)日：2021-09-16
申请号：US17320754
申请日：2021-05-14
发明人： Ming-Hui WENG , An-Ren ZI , Ching-Yu CHANG , Chin-Hsiang LIN , Chen-Yu LIU
IPC分类号： G03F7/30 , H01L21/033 , H01L21/311 , H01L21/02 , H01L21/3115 , G03F7/32 , G03F7/40
摘要： A method for forming a semiconductor device structure is provided. The method includes forming a resist layer over a material layer, the resist layer includes an inorganic material. The inorganic material includes a plurality of metallic cores and a plurality of first linkers bonded to the metallic cores. The method includes forming a modified layer over the resist layer, and the modified layer includes an auxiliary. The method includes performing an exposure process on the modified layer and the resist layer, and removing a portion of the modified layer and a first portion of the resist layer by a first developer. The first developer includes a ketone-based solvent having a substituted or unsubstituted C6-C7 cyclic ketone, an ester-based solvent having a formula (b), or a combination thereof.
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