公开(公告)号：US20160204200A1

公开(公告)日：2016-07-14

申请号：US15077097

申请日：2016-03-22

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Xiaomeng Chen ,  Chien-Hong Chen ,  Shih-Chang Liu ,  Zhiqiang Wu

IPC分类号： H01L29/10 ,  H01L29/786 ,  H01L29/78 ,  H01L29/423 ,  H01L29/06

CPC分类号： H01L29/1033 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66772 ,  H01L29/66787 ,  H01L29/785 ,  H01L29/7853 ,  H01L29/78696

摘要： A semiconductor device includes a first channel having a first linear surface and a first non-linear surface. The semiconductor device includes a first dielectric region surrounding the first channel. The semiconductor device includes a second channel having a third linear surface and a third non-linear surface. The semiconductor device includes a second dielectric region surrounding the second channel. The semiconductor device includes a gate electrode surrounding the first dielectric region and the second dielectric region.

公开(公告)号：US09299784B2

公开(公告)日：2016-03-29

申请号：US14046985

申请日：2013-10-06

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Xiaomeng Chen ,  Zhiqiang Wu ,  Shih-Chang Liu ,  Chien-Hong Chen

IPC分类号： H01L29/10 ,  H01L29/66 ,  H01L29/78 ,  H01L29/423 ,  H01L29/786 ,  H01L29/04

CPC分类号： H01L29/1033 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66772 ,  H01L29/66787 ,  H01L29/785 ,  H01L29/7853 ,  H01L29/78696

摘要： A semiconductor device includes a first channel having a first linear surface and a first non-linear surface. The semiconductor device includes a first dielectric region surrounding the first channel. The semiconductor device includes a second channel having a third linear surface and a third non-linear surface. The semiconductor device includes a second dielectric region surrounding the second channel. The semiconductor device includes a gate electrode surrounding the first dielectric region and the second dielectric region.

摘要翻译： 半导体器件包括具有第一线性表面和第一非线性表面的第一通道。 半导体器件包括围绕第一通道的第一电介质区域。 半导体器件包括具有第三线性表面和第三非线性表面的第二通道。 半导体器件包括围绕第二通道的第二电介质区域。 半导体器件包括围绕第一电介质区域和第二电介质区域的栅电极。

公开(公告)号：US20150187777A1

公开(公告)日：2015-07-02

申请号：US14144676

申请日：2013-12-31

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Chern-Yow Hsu ,  Ming Chyi Liu ,  Shih-Chang Liu ,  Chia-Shiung Tsai ,  Xiaomeng Chen ,  Chen-Jong Wang

IPC分类号： H01L27/108

CPC分类号： H01L27/10814 ,  H01L27/10852 ,  H01L28/90

摘要： A semiconductor arrangement includes an active region including a semiconductor device. The semiconductor arrangement includes a capacitor. The capacitor includes a first electrode over at least one dielectric layer over the active region. The first electrode surrounds an open space within the capacitor. The first electrode has a non-linear first electrode sidewall.

摘要翻译： 半导体装置包括包括半导体器件的有源区。 半导体装置包括电容器。 电容器包括位于有源区上的至少一个电介质层上的第一电极。 第一电极围绕电容器内的开放空间。 第一电极具有非线性第一电极侧壁。

公开(公告)号：US10008506B2

公开(公告)日：2018-06-26

申请号：US15362759

申请日：2016-11-28

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Chern-Yow Hsu ,  Chen-Jong Wang ,  Chia-Shiung Tsai ,  Shih-Chang Liu ,  Xiaomeng Chen

IPC分类号： H01L21/02 ,  H01L27/108 ,  H01L49/02 ,  H01L21/768

CPC分类号： H01L27/10894 ,  H01L21/76877 ,  H01L27/10814 ,  H01L27/1085 ,  H01L27/10897 ,  H01L28/90

摘要： A semiconductor arrangement includes a logic region and a memory region. The memory region has an active region that includes a semiconductor device. The memory region also has a capacitor within one or more dielectric layers over the active region, where the capacitor is over the semiconductor device. The semiconductor arrangement also includes a protective ring within at least one of the logic region or the memory region and that separates the logic region from the memory region. The capacitor has a first electrode, a second electrode and an insulating layer between the first electrode and the second electrode, where the first electrode is substantially larger than other portions of the capacitor.

公开(公告)号：US09966436B2

公开(公告)日：2018-05-08

申请号：US15077097

申请日：2016-03-22

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Xiaomeng Chen ,  Chien-Hong Chen ,  Shih-Chang Liu ,  Zhiqiang Wu

IPC分类号： H01L29/10 ,  H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L29/423 ,  H01L29/786 ,  H01L29/04

CPC分类号： H01L29/1033 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66772 ,  H01L29/66787 ,  H01L29/785 ,  H01L29/7853 ,  H01L29/78696

摘要： A semiconductor device includes a first channel having a first linear surface and a first non-linear surface. The semiconductor device includes a first dielectric region surrounding the first channel. The semiconductor device includes a second channel having a third linear surface and a third non-linear surface. The semiconductor device includes a second dielectric region surrounding the second channel. The semiconductor device includes a gate electrode surrounding the first dielectric region and the second dielectric region.

公开(公告)号：US20180090500A1

公开(公告)日：2018-03-29

申请号：US15817333

申请日：2017-11-20

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED

发明人： Chern-Yow HSU ,  Chen-Jong Wang ,  Chia-Shiung Tsai ,  Ming Chyi Liu ,  Shih-Chang Liu ,  Xiaomeng Chen

IPC分类号： H01L27/108 ,  H01L49/02

CPC分类号： H01L27/10814 ,  H01L27/10852 ,  H01L28/90

摘要： A semiconductor arrangement includes an active region including a semiconductor device. The semiconductor arrangement includes a capacitor. The capacitor includes a first electrode over at least one dielectric layer over the active region. The first electrode surrounds an open space within the capacitor. The first electrode has a non-linear first electrode sidewall.

公开(公告)号：US20160196983A1

公开(公告)日：2016-07-07

申请号：US15072598

申请日：2016-03-17

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Xiaomeng Chen ,  Chien-Hong Chen ,  Shih-Chang Liu ,  Zhiqiang Wu

IPC分类号： H01L21/306 ,  H01L29/161 ,  H01L21/308 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L21/30604 ,  H01L21/3083 ,  H01L21/76224 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/161 ,  H01L29/66537 ,  H01L29/66795 ,  H01L29/7853

摘要： A semiconductor device includes a channel having a first linear surface and a first non-linear surface. The first non-linear surface defines a first external angle of about 80 degrees to about 100 degrees and a second external angle of about 80 degrees to about 100 degrees. The semiconductor device includes a dielectric region covering the channel between a source region and a drain region. The semiconductor device includes a gate electrode covering the dielectric region between the source region and the drain region.

公开(公告)号：US20150145101A1

公开(公告)日：2015-05-28

申请号：US14087009

申请日：2013-11-22

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Chern-Yow Hsu ,  Shih-Chang Liu ,  Chia- Shiung Tsai ,  Xiaomeng Chen ,  Chen-Jong Wang

IPC分类号： H01L27/108 ,  H01L23/58

CPC分类号： H01L27/10894 ,  H01L23/5223 ,  H01L23/585 ,  H01L27/10814 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10855 ,  H01L27/10897 ,  H01L28/87 ,  H01L28/91 ,  H01L2924/0002 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/00

摘要： A semiconductor arrangement includes a logic region and a memory region. The memory region has an active region that includes a semiconductor device. The memory region also has a capacitor within one or more dielectric layers over the active region. The semiconductor arrangement includes a protective ring within at least one of the logic region or the memory region and that separates the logic region from the memory region. The capacitor has a first electrode, a second electrode and an insulating layer between the first electrode and the second electrode, where an electrode unit of the first electrode has a first portion and a second portion, and where the second portion is above the first portion and is wider than the first portion.

摘要翻译： 半导体装置包括逻辑区和存储区。 存储区具有包括半导体器件的有源区。 存储区域还在活性区域上的一个或多个电介质层内具有电容器。 半导体装置包括至少一个逻辑区域或存储区域内的保护环，并且将逻辑区域与存储区域分开。 电容器在第一电极和第二电极之间具有第一电极，第二电极和绝缘层，其中第一电极的电极单元具有第一部分和第二部分，并且其中第二部分在第一部分之上 并且比第一部分宽。

公开(公告)号：US11222896B2

公开(公告)日：2022-01-11

申请号：US16677783

申请日：2019-11-08

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED

发明人： Chern-Yow Hsu ,  Chen-Jong Wang ,  Chia-Shiung Tsai ,  Ming Chyi Liu ,  Shih-Chang Liu ,  Xiaomeng Chen

IPC分类号： H01L27/108 ,  H01L49/02

摘要： A semiconductor arrangement includes an active region including a semiconductor device. The semiconductor arrangement includes a capacitor. The capacitor includes a first electrode over at least one dielectric layer over the active region. The first electrode surrounds an open space within the capacitor. The first electrode has a non-linear first electrode sidewall.

公开(公告)号：US11037932B2

公开(公告)日：2021-06-15

申请号：US16390135

申请日：2019-04-22

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Chern-Yow Hsu ,  Chen-Jong Wang ,  Chia-Shiung Tsai ,  Shih-Chang Liu ,  Xiaomeng Chen

IPC分类号： H01L27/108 ,  H01L49/02 ,  H01L21/311 ,  H01L21/3213

摘要： A semiconductor arrangement includes an active region including a semiconductor device. The semiconductor arrangement includes a capacitor having a first electrode layer, a second electrode layer, and an insulating layer between the first electrode layer and the second electrode layer. At least three dielectric layers are between a bottom surface of the capacitor and the active region.