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公开(公告)号:US11162777B2
公开(公告)日:2021-11-02
申请号:US16725222
申请日:2019-12-23
Inventor: Wei-Hsiang Tseng , Chin-Hsiang Lin , Heng-Hsin Liu , Jui-Chun Peng , Ho-Ping Chen
IPC: G01B11/02 , H01L23/544 , G03F9/00
Abstract: A wafer alignment apparatus includes a light source, a light detection device, and a rotation device configured to rotate a wafer. The light source is configured to provide a light directed to the wafer. The light detection device is configured to detect reflected light intensity from the wafer to locate at least one wafer alignment mark of wafer alignment marks separated by a plurality of angles. At least two of those angles are equal.
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公开(公告)号:US09772561B2
公开(公告)日:2017-09-26
申请号:US14804186
申请日:2015-07-20
Inventor: Yung-Yao Lee , Heng-Hsin Liu , Yi-Ping Hsieh , Ying Ying Wang
CPC classification number: G03F7/70633 , G01N21/9501 , G03F9/7003 , G06F17/5081 , H01L22/12 , H01L22/20
Abstract: An overlay measurement and correction method and device is provided. In an embodiment the measurement device takes measurements of a first semiconductor wafer and uses the measurements in a plurality of correction techniques to generate an overlay correction model. The plurality of correction techniques include a first order correction, a first intra-field high order parameter correction and a first inter-field high order parameter correction. The model is used to adjust the exposure parameters for the exposure of the next semiconductor wafer. The process is repeated on each semiconductor wafer for a run-to-run analysis.
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公开(公告)号:US12265336B2
公开(公告)日:2025-04-01
申请号:US17446241
申请日:2021-08-27
Inventor: Kai-Chieh Chang , Che-Chang Hsu , Yen-Shuo Su , Chun-Lin Chang , Kai-Fa Ho , Li-Jui Chen , Heng-Hsin Liu
Abstract: An exposure tool is configured to remove contaminants and/or prevent contamination of mirrors and/or other optical components included in the exposure tool. In some implementations, the exposure tool is configured to flush and/or otherwise remove contaminants from an illuminator, a projection optics box, and/or one or more other subsystems of the exposure tool using a heated gas such as ozone (O3) or extra clean dry air (XCDA), among other examples. In some implementations, the exposure tool is configured to provide a gas curtain (or gas wall) that includes hydrogen (H2) or another type of gas to reduce the likelihood of contaminants reaching the mirrors included in the exposure tool. In this way, the mirrors and one or more other components of the exposure tool are cleaned and maintained in a clean environment in which radiation absorbing contaminants are controlled to increase the performance of the exposure tool.
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公开(公告)号:US12130555B2
公开(公告)日:2024-10-29
申请号:US18142500
申请日:2023-05-02
Inventor: Chih-Ping Yen , Yen-Shuo Su , Chieh Hsieh , Shang-Chieh Chien , Chun-Lin Chang , Li-Jui Chen , Heng-Hsin Liu
CPC classification number: G03F7/70033 , H05G2/006 , H05G2/008
Abstract: An extreme ultra violet (EUV) lithography method includes receiving an EUV light by a scanner from an EUV light source, the EUV light passing through an intermediate focus disposed in the scanner and at a junction of the EUV light source and the scanner; directing the EUV light by the scanner to a reticle in the scanner; and deflecting nanoparticles from the EUV light source away from the reticle by generating a gas flow using a gas jet disposed entirely in the scanner and proximate to an interface of the scanner and the intermediate focus such that the gas jet does not block the EUV light.
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公开(公告)号:US12096543B2
公开(公告)日:2024-09-17
申请号:US18151930
申请日:2023-01-09
Inventor: Chiao-Hua Cheng , Hsin-Feng Chen , Yu-Fa Lo , Yu-Kuang Sun , Wei-Shin Cheng , Yu-Huan Chen , Ming-Hsun Tsai , Cheng-Hao Lai , Cheng-Hsuan Wu , Shang-Chieh Chien , Heng-Hsin Liu , Li-Jui Chen , Sheng-Kang Yu
CPC classification number: H05G2/006 , G03F7/70033 , G03F7/7055 , H05G2/008
Abstract: A method for using an extreme ultraviolet radiation source is provided. The method includes performing a lithography process using an extreme ultraviolet (EUV) radiation source; after the lithography processes, inserting an extraction tube into a vessel of the EUV radiation source; and cleaning a collector of the EUV radiation source by using the extraction tube.
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公开(公告)号:US11803129B2
公开(公告)日:2023-10-31
申请号:US17662908
申请日:2022-05-11
Inventor: Shao-Hua Wang , Kueilin Ho , Cheng Wei Sun , Zong-You Yang , Chih-Chun Chiang , Yi-Fam Shiu , Chueh-Chi Kuo , Heng-Hsin Liu , Li-Jui Chen
CPC classification number: G03F7/70858 , G03F7/70033 , G03F7/70841 , G03F7/70916
Abstract: Some implementations described herein include operating components in a lithography system at variable speeds to reduce, minimize, and/or prevent particle generation due to rubbing of or collision between contact parts of the components. In some implementations, a component in a path of transfer of a semiconductor substrate in the lithography system is operated at a relatively high movement speed through a first portion of an actuation operation, and is operated at a reduced movement speed (e.g., a movement speed that is less than the high movement speed) through a second portion of the actuation operation in which contact parts of the component are to interact. The reduced movement speed reduces the likelihood of particle generation and/or release from the contact parts when the contact parts interact, while the high movement speed provides a high semiconductor substrate throughput in the lithography system.
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公开(公告)号:US20230288819A1
公开(公告)日:2023-09-14
申请号:US18197393
申请日:2023-05-15
Inventor: Tzu-Jung Pan , Sheng-Kang Yu , Shang-Chieh Chien , Li-Jui Chen , Heng-Hsin Liu
IPC: G03F7/20
CPC classification number: G03F7/70875 , G03F7/70525 , G03F7/705 , G03F7/70891
Abstract: A system and method for dynamically controlling a temperature of a thermostatic reticle. A thermostatic reticle assembly that includes a reticle, temperature sensors located in proximity to the reticle, and one or more heating elements. A thermostat component that is in communication with the temperature sensors and the heating element monitors the current temperature of the reticle relative to a steady-state temperature. In response to the current temperature of the reticle being lower than the steady-state temperature, the heating elements are activated to preheat the reticle to the steady-state temperature.
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公开(公告)号:US11747741B2
公开(公告)日:2023-09-05
申请号:US17370267
申请日:2021-07-08
Inventor: Yu-Huan Chen , Yu-Chih Huang , Ya-An Peng , Shang-Chieh Chien , Li-Jui Chen , Heng-Hsin Liu
CPC classification number: G03F7/70725 , G03F7/70758 , G03F7/70775 , G03F7/70358
Abstract: A semiconductor substrate stage for carrying a substrate is provided. The semiconductor substrate stage includes a base layer, a magnetic shielding layer disposed on the base layer, a carrier layer disposed on the magnetic shielding layer, and a receiver disposed on the carrier layer. The receiver is configured to receive a microwave signal from a signal source electrically isolated from the receiver, and the microwave signal is used for controlling the movement of the semiconductor substrate stage.
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公开(公告)号:US11681234B2
公开(公告)日:2023-06-20
申请号:US17331985
申请日:2021-05-27
Inventor: Yen-An Chen , Li-Jui Chen , Heng-Hsin Liu , Tzung-Chi Fu , Han-Lung Chang
CPC classification number: G03F7/70925 , G03F1/38
Abstract: A method includes transporting a cleaning mask and a photomask into an enclosure of a lithography exposure apparatus, wherein the photomask includes a multilayered mirror structure, and the cleaning mask is free of the multilayered mirror structure; placing the cleaning mask on a reticle stage of the lithography exposure apparatus; and charging the cleaning mask to attract charged particles in the enclosure.
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公开(公告)号:US11632849B2
公开(公告)日:2023-04-18
申请号:US17460144
申请日:2021-08-27
Inventor: Chieh Hsieh , Tai-Yu Chen , Hung-Jung Hsu , Cho-Ying Lin , Shang-Chieh Chien , Li-Jui Chen , Heng-Hsin Liu
Abstract: A shutter is provided near the immediate focus of a lithography apparatus in order to deflect tin debris generated by a source side of the apparatus away from a scanner side of the apparatus and towards a debris collection device. The activation of the shutter is synchronized with the generation of light pulses so as not to block light from entering the scanner side.
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