公开(公告)号：US20210272757A1

公开(公告)日：2021-09-02

申请号：US17165339

申请日：2021-02-02

Applicant: TDK CORPORATION

Inventor： Yuuki ABURAKAWA ,  Tatsuo NAMIKAWA ,  Akiyasu IIOKA ,  Hitoshi SAITA ,  Kazuhiro YOSHIKAWA

IPC: H01G4/33 ,  H01G4/008 ,  H01L23/64 ,  H01L23/498 ,  H01G4/30

Abstract: Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The dielectric layer has a through hole. An inner wall surface of the through hole has a first tapered surface and a second tapered surface surrounded by the first tapered surface. The first and second tapered surfaces are not covered with the upper electrode layer and have respective first and second taper angles with respect to a surface of the lower electrode layer. The second taper angle is smaller than the first taper angle.

公开(公告)号：US20210130187A1

公开(公告)日：2021-05-06

申请号：US17071474

申请日：2020-10-15

Applicant: TDK CORPORATION

Inventor： Toshio ASAHI ,  Masamitsu HAEMORI ,  Hitoshi SAITA

IPC: C01G23/00 ,  C23C16/40 ,  C23C16/06 ,  C23C16/56 ,  H01G4/10 ,  H05K1/18 ,  H01G4/33

Abstract: A dielectric film includes a main component of a complex oxide represented by a general formula of (Sr1-xCax)yTiO3. 0.40≤x≤0.90 and 0.90≤y≤1.10 are satisfied. A ratio of a diffraction peak intensity on (1, 1, 2) plane of the complex oxide to a diffraction peak intensity on (0, 0, 4) plane of the complex oxide in an X-ray diffraction chart of the dielectric film is 3.00 or more. Instead, a ratio of an intensity of a diffraction peak appearing at a diffraction angle 2θ of 32° or more and 34° or less to an intensity of a diffraction peak appearing at a diffraction angle 2θ of 46° or more and 48° or less in an X-ray diffraction chart of the dielectric film obtained by an X-ray diffraction measurement with Cu-Kα ray as an X-ray source is 3.00 or more.

公开(公告)号：US20190103220A1

公开(公告)日：2019-04-04

申请号：US16145231

申请日：2018-09-28

Applicant: TDK Corporation

Inventor： Masahiro HIRAOKA ,  Hitoshi SAITA ,  Suguru ANDOH ,  Atsuo MATSUTANI

IPC: H01G4/01 ,  H01G4/33 ,  H01G4/12

CPC classification number: H01G4/01 ,  H01G4/005 ,  H01G4/1227 ,  H01G4/1245 ,  H01G4/33 ,  H01G7/06

Abstract: Provided is a thin film capacitor that includes: a first electrode layer having a principal surface in which a plurality of recesses are provided; a dielectric layer laminated on the principal surface of the first electrode layer; and a second electrode layer laminated on the dielectric layer. When a depth of the recess is defined as FL and a thickness of the dielectric layer is defined as T, H/T is 0.05 or more and 0.5 or less.

公开(公告)号：US20250006428A1

公开(公告)日：2025-01-02

申请号：US18708479

申请日：2022-10-12

Applicant: TDK Corporation

Inventor： Hitoshi SAITA

IPC: H01G4/232 ,  H01G4/33

Abstract: A thin film capacitor 1 includes a dielectric layer, capacitor electrodes formed respectively on first and second surfaces of the dielectric layer, a protective insulating film formed on the first surface of the dielectric layer so as to embed therein one of the capacitor electrodes, a protective insulating film formed on the second surface of the dielectric layer so as to embed therein the other of the capacitor electrodes, and terminal electrodes connected respectively to the capacitor electrodes. One of the terminal electrodes includes a first section positioned on the upper surface of the protective insulating film and partly overlapping the other of the capacitor electrode and a second section positioned on the side surface of the protective insulating film so as to contact the one of the capacitor electrodes. The other of the terminal electrodes is not formed on the upper surface of the protective insulating film.

公开(公告)号：US20210276868A1

公开(公告)日：2021-09-09

申请号：US17190045

申请日：2021-03-02

Applicant: TDK CORPORATION

Inventor： Toshio ASAHI ,  Masamitsu HAEMORI ,  Masahito FURUKAWA ,  Hitoshi SAITA

IPC: C01B21/082 ,  H05K1/03

Abstract: To provide a dielectric composition having excellent reliability. The dielectric composition contains a main component represented by a composition formula (Sr1-xCax)m(Ti1-yHfy)O3-δNδ, in which 0.15

公开(公告)号：US20210159019A1

公开(公告)日：2021-05-27

申请号：US17166528

申请日：2021-02-03

Applicant: TDK Corporation

Inventor： Masahiro HIRAOKA ,  Hiroshi TAKASAKI ,  Hitoshi SAITA

IPC: H01G4/33 ,  C23C14/34 ,  H01G4/008

Abstract: A thin film capacitor comprises a first electrode, a second electrode, and a dielectric substance disposed between the first electrode 10 and the second electrode. The second electrode has a first metallic layer, an intermediate layer, and a second metallic layer in sequence in this order from the side of the dielectric substance. The first metallic layer contains a metal element M1 as a main component, and the second metallic layer contains a metal element M2 different from the metal element M1 as a main component. The intermediate layer has one or more laminate structures each having a second metal sublayer containing the metal element M2 as a main component and a first metal sublayer containing the metal element M1 as a main component in sequence from the side of the first metallic layer toward the side of the second metallic layer.

公开(公告)号：US20190392992A1

公开(公告)日：2019-12-26

申请号：US16436559

申请日：2019-06-10

Applicant: TDK CORPORATION

Inventor： Michihiro KUMAGAE ,  Kazuhiro YOSHIKAWA ,  Shigeaki TANAKA ,  Hitoshi SAITA

IPC: H01G4/33 ,  H01L21/48 ,  H01L23/498 ,  H05K1/09 ,  H05K1/11 ,  H05K1/16 ,  H05K3/46 ,  H01L49/02

Abstract: Disclosed herein is a thin film capacitor that includes a capacitive insulating film having first and second through holes, a first metal film provided on one surface of the capacitive insulating film, and a second metal film provided on the other surface of the capacitive insulating film. The first and second metal films are made of different metal materials from each other. The first metal film is divided into a first area positioned outside the first space and a second area positioned inside the first space. The second metal film is divided into a third area positioned outside the second space and a fourth area positioned inside the second space. The third area is connected to the second area through the first through hole. The fourth area is connected to the first area through the second through hole.

公开(公告)号：US20190304688A1

公开(公告)日：2019-10-03

申请号：US16359824

申请日：2019-03-20

Applicant: TDK CORPORATION

Inventor： Saori TAKAHASHI ,  Masahito FURUKAWA ,  Masamitsu HAEMORI ,  Hiroki UCHIYAMA ,  Wakiko SATO ,  Hitoshi SAITA

IPC: H01G4/12 ,  H01G4/33

Abstract: A dielectric membrane may be exposed to an acid solution such as hydrochloric acid, nitric acid, or sulfuric acid during a wet process after membrane formation. The inventors have newly found that when a dielectric membrane includes Ca having a lower ionization tendency than Ba and Zr having a lower ionization tendency than Ti in a main component of a metal oxide expressed by a general formula (Ba, Ca)(Ti, Zr)O3 and satisfies at least one of degree of orientation of (100) plane>degree of orientation of (110) plane and degree of orientation of (111) plane>degree of orientation of (110) plane in a membrane thickness direction, the dielectric membrane is less likely to be damaged during a wet process, and the resistance to a wet process is improved.

公开(公告)号：US20190096588A1

公开(公告)日：2019-03-28

申请号：US16141031

申请日：2018-09-25

Applicant: TDK Corporation

Inventor： Hiroshi TAKASAKI ,  Masahiro HIRAOKA ,  Hitoshi SAITA

IPC: H01G4/33 ,  H01G4/008

Abstract: A thin film capacitor includes a first electrode layer (10), a dielectric layer (20) stacked on the first electrode layer (10), and a second electrode layer (30) stacked on the dielectric layer (20), wherein the dielectric layer (20) includes a layered void aggregation region (22) which extends in a direction orthogonal to a stacking direction.

公开(公告)号：US20180102220A1

公开(公告)日：2018-04-12

申请号：US15725571

申请日：2017-10-05

Applicant: TDK CORPORATION

Inventor： Hiroshi TAKASAKI ,  Masahiro HIRAOKA ,  Hitoshi SAITA ,  Kenichi YOSHIDA

IPC: H01G4/33 ,  H01L49/02 ,  H01L29/94 ,  H01G7/06 ,  H01G4/018 ,  H01G4/40 ,  H01G4/005

Abstract: A thin-film capacitor includes a capacitor section in which electrode layers and dielectric layers are alternately stacked and which includes a hole portion that extends to the electrode layer. In a cross-section which is perpendicular to a stacking surface of the capacitor section and which passes through the hole portion, a side surface of the hole portion extends along a reference line extending in a direction intersecting the stacking surface, the dielectric layer extends up to the reference line toward the hole portion, and a gap is formed between the side surface of the pair electrode layer and the reference line.