公开(公告)号：US20240074323A1

公开(公告)日：2024-02-29

申请号：US18270114

申请日：2021-01-12

Applicant: TDK CORPORATION

Inventor： Shogo YAMADA ,  Tatsuo SHIBATA

IPC: H10N50/10 ,  G11C11/16 ,  G11C19/08 ,  H10B61/00

CPC classification number: H10N50/10 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808 ,  H10B61/22

Abstract: A magnetic array includes: a plurality of magnetoresistance effect elements; and a pulse application device which applies a pulse to each of the plurality of magnetoresistance effect elements, wherein each of the plurality of magnetoresistance effect elements includes domain wall motion layer, ferromagnetic layer, and non-magnetic layer sandwiched between the domain wall motion layer and the ferromagnetic layer, wherein the pulse application device is configured to apply an initialization pulse and an operation pulse to each of the plurality of magnetoresistance effect elements, wherein the initialization pulse has a first pulse that is applied a plurality of times to spread a distribution of resistance values of the plurality of magnetoresistance effect elements from an initial distribution, and wherein a voltage of each first pulse is smaller than that of the operation pulse or each pulse length of the first pulse is shorter than that of the operation pulse.

公开(公告)号：US20220399487A1

公开(公告)日：2022-12-15

申请号：US17718801

申请日：2022-04-12

Applicant: TDK CORPORATION

Inventor： Shogo YAMADA ,  Tatsuo SHIBATA

IPC: H01L43/02 ,  H01L27/22

Abstract: A magnetic domain wall movement element includes a magnetoresistance effect part, a first electrode, a second electrode, a third electrode, a first magnetization fixed layer, and a second magnetization fixed layer. The magnetoresistance effect part includes a reference layer, a magnetic domain wall movement layer, and a non-magnetic layer. The magnetic domain wall movement layer has a first region and second region in which a magnetization direction is fixed, and a third region in which a magnetization direction is variable. The reference layer overlaps at least part of the first region and the second region in a plan view in a first direction, and at least part of the first region and the second region is shorter than the third region in a third direction orthogonal to the first direction and the second direction.

公开(公告)号：US20220165934A1

公开(公告)日：2022-05-26

申请号：US17542647

申请日：2021-12-06

Applicant: TDK CORPORATION

Inventor： Shogo YAMADA ,  Minoru OTA ,  Tatsuo SHIBATA

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12 ,  G11C11/16

Abstract: A magnetoresistance effect element includes a magnetic recording layer which includes a ferromagnetic material, a non-magnetic layer laminated on the magnetic recording layer, and a magnetization reference layer laminated on the non-magnetic layer. The magnetic recording layer includes a first ferromagnetic layer, a spacer layer, and a second ferromagnetic layer in order from the non-magnetic layer. The first ferromagnetic layer and the second ferromagnetic layer are antiferromagnetically coupled to each other. The magnetic recording layer has a central region in which a product of film thickness and saturation magnetization of the first ferromagnetic layer is greater than a product of a film thickness and saturation magnetization of the second ferromagnetic layer, and an outer region in which the product of the film thickness and the saturation magnetization of the first ferromagnetic layer is smaller than the product of the film thickness and the saturation magnetization of the second ferromagnetic layer.

公开(公告)号：US20220109101A1

公开(公告)日：2022-04-07

申请号：US17491028

申请日：2021-09-30

Applicant: TDK CORPORATION

Inventor： Shogo YAMADA ,  Tatsuo SHIBATA

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  G11C11/16 ,  H01L43/14 ,  H01F10/32 ,  G06N3/063 ,  G06F7/544

Abstract: According to an embodiment, there is provided an integrated device including: a substrate; and a laminated structure stacked on the substrate, in which the laminated structure includes a first element group and a second element group disposed at a position farther from the substrate than the first element group, each of the first element group and the second element group includes a plurality of domain wall movement elements, each of the plurality of domain wall movement elements includes a domain wall movement layer, a ferromagnetic layer, and a non-magnetic layer interposed between the domain wall movement layer and the ferromagnetic layer, and each of the domain wall movement elements belonging to the second element group has a lower critical current density required for moving a domain wall of the domain wall movement layer than each of the domain wall movement elements belonging to the first element group.