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公开(公告)号：US20240074325A1
公开(公告)日：2024-02-29
申请号：US17899131
申请日：2022-08-30
Applicant: TDK CORPORATION
Inventor： Shogo YONEMURA , Tatsuo SHIBATA , Shogo YAMADA
CPC classification number: H01L43/02 , H01L27/222 , H01L43/10 , H01L43/12
Abstract: A magnetic domain wall moving element includes a first ferromagnetic layer, non-magnetic layer, second ferromagnetic layer, first magnetization fixed part, second magnetization fixed part, first surface layer and second surface layer. The first and second ferromagnetic layer sandwich the non-magnetic layer, the second ferromagnetic layer has a region having a magnetic domain wall formed therein, the first magnetization fixed part contacts second ferromagnetic layer, the second magnetization fixed part contacts second ferromagnetic layer at a position different from that of the first magnetization fixed part, the first is thicker than the second magnetization fixed part, the first surface layer contacts the first magnetization fixed part's first surface, the second surface layer contacts the second magnetization fixed part's first surface, and a constituent atom of a portion of the first surface layer in contact with the first magnetization fixed part are different from a constituent atom of the second surface layer.
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公开(公告)号：US20220376168A1
公开(公告)日：2022-11-24
申请号：US17772325
申请日：2020-02-20
Applicant: TDK CORPORATION
Inventor： Shogo YAMADA
Abstract: A magnetic domain wall movement element includes a magnetic recording layer which includes a ferromagnetic material; a non-magnetic layer which is laminated on the magnetic recording layer; and a magnetization reference layer which is laminated on the non-magnetic layer, in which the magnetic recording layer has a first ferromagnetic layer, a spacer layer, and a second ferromagnetic layer in order from the non-magnetic layer, a magnetization of the first ferromagnetic layer and a magnetization of the second ferromagnetic layer are antiferromagnetically coupled, and an electrical resistivity of the first ferromagnetic layer is higher than the electrical resistivity of the second ferromagnetic layer.
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3.发明公开公开(公告)号：US20240237547A9
公开(公告)日：2024-07-11
申请号：US18271550
申请日：2021-03-02
Applicant: TDK CORPORATION
Inventor： Shogo YAMADA , Tatsuo SHIBATA
Abstract: A domain wall displacement element includes a magnetoresistance element which has a reference layer and a domain wall displacement layer each containing a ferromagnetic body, a non-magnetic layer, and first and second magnetization fixed layers which are in contact with the displacement layer, wherein the first layer has a first region in contact with the displacement layer, a non-magnetic first intermediate layer, and a second region contacting the first intermediate layer, the first region has a first ferromagnetic layer contacting the first intermediate layer, the second region has a second ferromagnetic layer contacting the first intermediate layer, the first and second ferromagnetic layers are ferromagnetically coupled, a ferromagnetic layer closest to the displacement layer in the first region and a ferromagnetic layer closest to displacement layer in the second magnetization fixed layer have the same film configuration, and the first and second regions are different in film configuration.
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公开(公告)号：US20240020520A1
公开(公告)日：2024-01-18
申请号：US17865966
申请日：2022-07-15
Applicant: TDK CORPORATION
Inventor： Shogo YAMADA , Keita SUDA , Yukio TERASAKI , Tomoyuki SASAKI
CPC classification number: G06N3/063 , H01L27/228 , H01L43/02 , H01L43/08
Abstract: A memristor includes a first variable conductance element and a second variable conductance element. A minimum value of conductance of the second variable conductance element during reading is larger than a maximum value of conductance of the first variable conductance element during reading. In the memristor, a first read path when the conductance of the first variable conductance element is read merges with a second read path when the conductance of the second variable conductance element is read.
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公开(公告)号：US20220188618A1
公开(公告)日：2022-06-16
申请号：US17507561
申请日：2021-10-21
Applicant: TDK CORPORATION
Inventor： Shogo YAMADA , Tatsuo SHIBATA
Abstract: This neuromorphic device including: a first element group; and a second element group, in which each of the first element group and the second element group includes a plurality of magnetic domain wall movement elements, each of the plurality of magnetic domain wall movement elements includes a magnetic domain wall movement layer, a ferromagnetic layer, and a non-magnetic layer interposed between the magnetic domain wall movement layer and the ferromagnetic layer, a length of the magnetic domain wall movement layer of each of the magnetic domain wall movement elements belonging to the first element group in a longitudinal direction is shorter than a length of the magnetic domain wall movement layer of each of the magnetic domain wall movement elements belonging to the second element group in the longitudinal direction, and a resistance changing rate when a predetermined pulse is input is higher for each of the magnetic domain wall movement elements belonging to the first element group than for each of the magnetic domain wall movement elements belonging to the second element group.
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Patent Agency Ranking
公开(公告)号：US20240180044A1
公开(公告)日：2024-05-30
申请号：US17994751
申请日：2022-11-28
Applicant: TDK CORPORATION
Inventor： Shogo YAMADA
Abstract: A magnetic domain wall moving layer, reference layer, non-magnetic layer, a first, second, and third electrode. Magnetic domain wall moving layer includes first area wherein an orientation direction of magnetization is fixed, second area wherein orientation direction of magnetization is fixed in direction different from that of first area, and third area sandwiched between first and second areas wherein orientation direction of magnetization is changeable. First electrode is connected to first area. Second electrode is connected to second area. In magnetic domain wall moving element, a read current flows between second and third electrodes. In first direction, a center of third area in first direction is between center of first connection surface of third electrode and reference layer in first direction and center of second connection surface of second electrode and magnetic domain wall moving layer in first direction.
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公开(公告)号：US20220005866A1
公开(公告)日：2022-01-06
申请号：US17207236
申请日：2021-03-19
Applicant: TDK CORPORATION
Inventor： Shogo YAMADA , Tatsuo SHIBATA , Tomoyuki SASAKI
Abstract: An integrated device includes: a substrate; and a laminated structural body. The substrate has a plurality of switching elements. The laminated structural body has a plurality of magnetic elements having a first element group disposed in a first hierarchical layer and a second element group disposed in a second hierarchical layer. Each of the plurality of magnetic elements includes a conductive layer and a laminated body including a ferromagnetic layer. The plurality of switching elements include a plurality of first switching elements connected to first ends of the conductive layers and a plurality of second switching elements connected to second ends of the conductive layers. A first switching element connected to a second magnetic element belonging to a second element group which is present between a first switching element and a second switching element connected to a first magnetic element belonging to a first element group.
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8.发明申请公开(公告)号：US20200044141A1
公开(公告)日：2020-02-06
申请号：US16191893
申请日：2018-11-15
Applicant: TDK CORPORATION
Inventor： Shogo YAMADA , Tomoyuki SASAKI , Yukio TERASAKI , Tatsuo SHIBATA
Abstract: A magnetic domain wall displacement type magnetic recording element which comprises: a first magnetization fixed part which is stacked in a first direction, a magnetic recording layer which includes a magnetic domain wall and extends in a second direction which crosses with the first direction, a non-magnetic layer which is provided between the first magnetization fixed part and the magnetic recording layer, and a first via part which is electrically connected to the magnetic recording layer, wherein at least a part of the first via part is located at a position which is apart from the first magnetization fixed part in the second direction in planar view observed from the first direction, the magnetic recording layer includes a first part which has a position where the first magnetization fixed part overlaps with the magnetic recording layer in planar view observed from the first direction, and a width of the first via part in a third direction which is orthogonal to the second direction is larger than a width of said position of the first part of the magnetic recording layer.
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公开(公告)号：US20250061322A1
公开(公告)日：2025-02-20
申请号：US18891694
申请日：2024-09-20
Applicant: TDK CORPORATION
Inventor： Shogo YAMADA , Tatsuo SHIBATA
Abstract: A neuromorphic device includes: first and second element groups, in which each includes magnetic domain wall movement elements, each of which includes magnetic domain wall movement and ferromagnetic layers, and a non-magnetic layer between the magnetic domain wall movement and ferromagnetic layers, a length of the magnetic domain wall movement layer of each of the magnetic domain wall movement elements belonging to the first element group in a longitudinal direction is shorter than a length of the magnetic domain wall movement layer of each of the magnetic domain wall movement elements belonging to the second element group in the longitudinal direction, and a resistance changing rate when a predetermined pulse is input is higher for each of the magnetic domain wall movement elements belonging to the first element group than for each of the magnetic domain wall movement elements belonging to the second element group.
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10.发明公开公开(公告)号：US20240138267A1
公开(公告)日：2024-04-25
申请号：US18271550
申请日：2021-03-02
Applicant: TDK CORPORATION
Inventor： Shogo YAMADA , Tatsuo SHIBATA
Abstract: A domain wall displacement element includes a magnetoresistance element which has a reference layer and a domain wall displacement layer each containing a ferromagnetic body, a non-magnetic layer, and first and second magnetization fixed layers which are in contact with the displacement layer, wherein the first layer has a first region in contact with the displacement layer, a non-magnetic first intermediate layer, and a second region contacting the first intermediate layer, the first region has a first ferromagnetic layer contacting the first intermediate layer, the second region has a second ferromagnetic layer contacting the first intermediate layer, the first and second ferromagnetic layers are ferromagnetically coupled, a ferromagnetic layer closest to the displacement layer in the first region and a ferromagnetic layer closest to displacement layer in the second magnetization fixed layer have the same film configuration, and the first and second regions are different in film configuration.
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