Patent search ap:("TEXAS INSTRUMENTS INC") AND inv:"HABERECHT ROLF R" Page 2

11.

发明授权
Semiconductors having selectively formed conductive or metallic portions and methods of making same 失效
Title translation: 具有选择性形成的导电或金属部分的半导体及其制造方法

公开(公告)号：US3501342A

公开(公告)日：1970-03-17

申请号：US3501342D

申请日：1965-02-26

Applicant: TEXAS INSTRUMENTS INC

Inventor： HABERECHT ROLF R , RAMSEY THOMAS H JR

IPC: H01L21/768 , H01L23/48 , B44D1/18

CPC classification number: H01L21/76898 , H01L21/768 , H01L23/481 , H01L2924/0002 , Y10S148/023 , Y10S428/901 , Y10T428/24802 , Y10T428/24917 , H01L2924/00

12.

发明授权
Process for making boron nitride film capacitors 失效
Title translation: 制造氮化硼薄膜电容器的工艺

公开(公告)号：US3414435A

公开(公告)日：1968-12-03

申请号：US33002363

申请日：1963-12-12

Applicant: TEXAS INSTRUMENTS INC

Inventor： PATTERSON ROBERT J , HABERECHT ROLF R

IPC: C04B41/52 , C04B41/89 , C23C8/08 , C23C16/02 , C23C16/34 , C23C28/00 , H01B1/00 , H01B3/00 , H01B3/02 , H01B11/00 , H01G4/06 , H01G4/08 , H01L49/02

CPC classification number: C04B41/89 , C04B41/52 , C23C8/08 , C23C16/02 , C23C16/342 , C23C28/00 , H01B1/00 , H01B3/004 , H01B3/02 , H01B3/025 , H01B11/00 , H01G4/06 , H01G4/085 , H01L49/02 , Y10T29/435

13.

发明授权
Boron nitride film capacitor 失效
Title translation: 氮化硼薄膜电容器

公开(公告)号：US3359468A

公开(公告)日：1967-12-19

申请号：US50520465

申请日：1965-09-10

Applicant: TEXAS INSTRUMENTS INC

Inventor： PATTERSON ROBERT J , HABERECHT ROLF R

IPC: C04B41/52 , C04B41/89 , C23C8/08 , C23C16/02 , C23C16/34 , C23C28/00 , H01B1/00 , H01B3/00 , H01B3/02 , H01B11/00 , H01G4/06 , H01G4/08 , H01L49/02

CPC classification number: C04B41/89 , C04B41/52 , C23C8/08 , C23C16/02 , C23C16/342 , C23C28/00 , H01B1/00 , H01B3/004 , H01B3/02 , H01B3/025 , H01B11/00 , H01G4/06 , H01G4/085 , H01L49/02 , Y10T29/435

Patent Agency Ranking