公开(公告)号：US3620945A

公开(公告)日：1971-11-16

申请号：US3620945D

申请日：1970-01-19

Applicant: TEXAS INSTRUMENTS INC

Inventor： SIVERTSEN DAVID R ,  CECIL OLIN B ,  HABERECHT ROLF R

IPC: C30B33/00 ,  H01L49/02 ,  B01J1/10

CPC classification number: H01L49/02 ,  C30B29/20 ,  C30B33/00

Abstract: A method for altering the dielectric constant of a dielectric body by a bombarding of a region of the body with an electron beam for a sufficient length of time to alter the dielectric constant of the body. Exposure of the body to the electron beam is terminated before the region becomes conductive, and the dielectric body exposed to the beam is preferably monocrystalline in nature.

公开(公告)号：US3557440A

公开(公告)日：1971-01-26

申请号：US3557440D

申请日：1968-01-05

Applicant: TEXAS INSTRUMENTS INC

Inventor： HABERECHT ROLF R

IPC: H01B1/00 ,  H01B3/00 ,  H01C17/06 ,  H01F1/00 ,  H01F1/03 ,  H01F41/34 ,  H01G4/12 ,  H01G13/06 ,  H01L21/00 ,  H01L21/60 ,  H01L23/10 ,  H01L23/15 ,  H01L23/29 ,  H01L23/522 ,  H01L27/00 ,  H01L49/02 ,  H05K3/10 ,  B23K31/02

CPC classification number: H01L23/10 ,  H01B1/00 ,  H01B3/004 ,  H01C17/06 ,  H01F1/00 ,  H01F1/0313 ,  H01F41/34 ,  H01G4/12 ,  H01G4/1209 ,  H01G13/06 ,  H01L21/00 ,  H01L23/15 ,  H01L23/291 ,  H01L23/522 ,  H01L23/5227 ,  H01L24/81 ,  H01L27/00 ,  H01L49/02 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H05K3/105 ,  H05K2203/092 ,  H05K2203/107 ,  H05K2203/1105 ,  H05K2203/125 ,  Y10S65/04 ,  H01L2924/00

Abstract: THIS APPLICATION RELATES TO A PROCESS OF PREPARING A BODY HAVING CONDUCTIVE AND DIELECTRIC PORTIONS. A SURFACE ZONE OF A DIELECTRIC BODY IS SELECTIVELY REDUCED TO A METAL AND A CONDUCTOR IS THEREAFTER ADHERED TO THE SELECTIVELY-REDUCED SURFACE ZONE. THE ADHERING MAY BE ACCOMPLISHED BY JOINING A CONDUCTOR SUCH AS A METAL OR GRAPHITE TO THE REDUCED ZONE OR BY PLATING A METAL ON THE CONDUCTIVE SURFACE ZONE. PARTICULARLY, YTTRIUM IRON GARNET IS JOINED TO A CONDUCTOR BY HEATING A SURFACE REGION OF THE DIELECTRIC BODY IN A REDUCING ENVIRONMENT TO A TEMPERATURE NOT LOWER THAN 700*C. TO REDUCE THE SURFACE REGION. THE CONDUCTOR AND DIELECTRIC TO BE JOINED MAY BE PLACED INTO CONTACT EITHER BEFORE OR AFTER THE SURFACE REDUCTION ZONE IS FORMED.

公开(公告)号：US3390012A

公开(公告)日：1968-06-25

申请号：US39848064

申请日：1964-09-18

Applicant: TEXAS INSTRUMENTS INC

Inventor： HABERECHT ROLF R

IPC: H01B1/00 ,  H01B3/00 ,  H01C7/00 ,  H01C17/06 ,  H01F1/00 ,  H01F1/03 ,  H01F1/34 ,  H01F41/34 ,  H01G4/12 ,  H01G13/06 ,  H01L21/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/60 ,  H01L23/29 ,  H01L23/522 ,  H01L23/538 ,  H01L27/00 ,  H01L49/02 ,  H05K3/10

CPC classification number: H05K3/105 ,  H01B1/00 ,  H01B3/004 ,  H01C7/001 ,  H01C17/06 ,  H01F1/00 ,  H01F1/0311 ,  H01F1/0313 ,  H01F1/346 ,  H01F41/34 ,  H01G4/12 ,  H01G4/1209 ,  H01G13/06 ,  H01L21/00 ,  H01L21/4846 ,  H01L21/56 ,  H01L23/291 ,  H01L23/522 ,  H01L23/5227 ,  H01L23/5384 ,  H01L24/81 ,  H01L27/00 ,  H01L49/02 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01088 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H05K2203/092 ,  H05K2203/107 ,  H05K2203/1105 ,  H05K2203/125 ,  Y10S148/026 ,  Y10S148/051 ,  Y10S148/071 ,  Y10S148/085 ,  Y10S148/106 ,  Y10S148/15 ,  Y10S428/90 ,  Y10S430/143 ,  Y10T29/435 ,  H01L2924/00

Abstract: A dielectric body has conductive regions formed therein by selective reduction. The invention is described with reference to the reduction of a crystalline compound of formula Mx Y3- x Aq Fe5- q O12, wherein M is selected from the group consisting of aluminium gallium, indium, thallium, lanthanum, scandium and the rare earth elements, and x is any number between 0 and 3; wherein A is selected from the same group of metals and q is any number between 0 and 5; and wherein x is always less than 3 when q = 5 and q is always less than 5 when x = 3; and in particular yttrium iron garnet, Y3 Fe5 O12, (YIG). Other compounds which may be used include spinels, hexagonal iron oxides, and perovskites. The degree of conductivity attained depends upon the intensity and duration of the reducing reaction. Fig. 1 shows a YIG body the surface of which has been reduced in a hydrogen atmosphere. Inner region A comprises unreduced YIG having a resistivity of about 1012 ohm-cm. while surface E consists almost entirely of metallic iron; intermediate layers B, C, D are of progressively higher conductivities. Regions of limited conductivity, e.g. to form resistors, are produced by partial reduction. Surfaces may be metallized by reduction prior to the plating thereof, e.g. with nickel, by an elctroless process. Electroless plating of nickel may be carried out in a solution containing the following percentages by weight:- .NiCl2 . 6 H2O.3% .NaH2 PO2 . H2O.1% .Ammonium chloride.5% .Sodium citrate.10% .Water.81% Ammonium hydroxide is repeatedly added to the solution during plating at 95 DEG C. for half an hour. Other metals, such as silver, may be deposited be electroless plating on the reduced surface.

公开(公告)号：US3564565A

公开(公告)日：1971-02-16

申请号：US3564565D

申请日：1964-05-05

Applicant: TEXAS INSTRUMENTS INC

Inventor： HABERECHT ROLF R ,  PATTERSON ROBERT J

IPC: C23C16/02 ,  C23C16/34 ,  H01B3/02 ,  C23B5/52 ,  C23C11/00

CPC classification number: C23C16/0281 ,  C23C16/342 ,  H01B3/025 ,  Y10S428/938 ,  Y10T428/12576 ,  Y10T428/12674 ,  Y10T428/12681 ,  Y10T428/12778 ,  Y10T428/31678

Abstract: DISCLOSED IS A PROCESS FOR ADHERENTLY DEPOSITING A FILM A BORON NITRIDE DIRECTLY UPON THE SURFACE OF A SUBSTRATE CONSISTING PRIMARILY OF COPPER OR COPPER ALLOY, COMPRISING THE STEPS OF FIRST DEGENERATING THE SURFACE OF THE SUBSTRATE BY THE INTERSPERSION OF FOREIGN ATOMS INTO THE LATTICE STRUCTURE OF THE COPPER, AND THEN DEPOSITING A FILM OF BORON NITRIDE ON THE DEGENERATED SURFACE.

公开(公告)号：US3436306A

公开(公告)日：1969-04-01

申请号：US3436306D

申请日：1965-12-03

Applicant: TEXAS INSTRUMENTS INC

Inventor： HABERECHT ROLF R ,  BRACKEN RONALD C ,  MCCRARY JAMES W

IPC: D21F1/52 ,  D21F1/50

CPC classification number: D21F1/523

公开(公告)号：US3565807A

公开(公告)日：1971-02-23

申请号：US3565807D

申请日：1969-01-16

Applicant: TEXAS INSTRUMENTS INC

Inventor： SIVERTSEN DAVID R ,  CECIL OLIN B ,  HABERECHT ROLF R

IPC: H01B3/00 ,  H01G4/12 ,  H01L49/02 ,  B01J1/10 ,  H01B3/12

CPC classification number: H01G4/12 ,  H01B3/002 ,  H01L49/02 ,  Y10T428/24752

Abstract: IN THE FABRICATION OF MICROELECTRONIC CIRCUITRY, A CAPACITIVE DEVICE IS FABRICATED COMPRISING A DIELECTRIC MATRIX THAT INCLUDES A DISCRETE REGION AUTOGENOUSLY FORMED THEREIN HAVING A DIELECTRIC CONSTANT THAT DIFFERS FROM THAT OF THE MATRIX.

公开(公告)号：US3553533A

公开(公告)日：1971-01-05

申请号：US3553533D

申请日：1968-02-02

Applicant: TEXAS INSTRUMENTS INC

Inventor： HABERECHT ROLF R

IPC: H01B1/00 ,  H01B3/00 ,  H01C17/06 ,  H01F1/00 ,  H01F1/03 ,  H01F1/34 ,  H01F41/34 ,  H01G4/12 ,  H01G13/06 ,  H01L21/00 ,  H01L21/60 ,  H01L23/10 ,  H01L23/15 ,  H01L23/29 ,  H01L23/522 ,  H01L27/00 ,  H01L49/02 ,  H05K3/10 ,  H01H1/16 ,  H01L5/00

CPC classification number: H01L23/15 ,  H01B1/00 ,  H01B3/004 ,  H01C17/06 ,  H01F1/00 ,  H01F1/0311 ,  H01F1/0313 ,  H01F1/346 ,  H01F41/34 ,  H01G4/12 ,  H01G4/1209 ,  H01G13/06 ,  H01L21/00 ,  H01L23/10 ,  H01L23/291 ,  H01L23/522 ,  H01L23/5227 ,  H01L24/81 ,  H01L27/00 ,  H01L49/02 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H05K3/105 ,  H05K2203/092 ,  H05K2203/107 ,  H05K2203/1105 ,  H05K2203/125 ,  H01L2924/00

Abstract: 11. A CIRCUIT BOARD COMPRISING A DIELECTRIC SUBSTRATE OF YTTRIUM IRON GARNET HAVING AN AUTOGENEOUSLY FORMED CONDUCTIVE PORTION DEFINING A CONDUCTIVE PATH THEREON, SAID CONDUCTIVE PORTION COMPRISING A PART THAT HAS A COMPARATIVELY HIGH CONDUCTIVITY AND A PART CONTIGUOUS WITH SAID COMPARATIVELY CONDUCTIVE PART THAT IS LESS CONDUCTIVE, WHEREBY SAID LATTER PART EFFECTIVELY DEFINES A RESISTOR ON SAID CONDUCTIVE PATH.

公开(公告)号：US3458368A

公开(公告)日：1969-07-29

申请号：US3458368D

申请日：1966-05-23

Applicant: TEXAS INSTRUMENTS INC

Inventor： HABERECHT ROLF R

IPC: C23C8/00 ,  H01L21/00 ,  H01L21/263 ,  H01L21/8222 ,  H01L7/36

CPC classification number: H01L21/8222 ,  C23C8/00 ,  H01L21/00 ,  H01L21/2636 ,  Y10S148/006 ,  Y10S148/025 ,  Y10S148/026 ,  Y10S148/048 ,  Y10S148/049 ,  Y10S148/071 ,  Y10S148/097 ,  Y10S148/169 ,  Y10S438/971 ,  Y10S438/974

公开(公告)号：US3436468A

公开(公告)日：1969-04-01

申请号：US3436468D

申请日：1965-05-28

Applicant: TEXAS INSTRUMENTS INC

Inventor： HABERECHT ROLF R

IPC: H05K3/18 ,  H05K1/00

CPC classification number: H05K3/185 ,  Y10T428/31511 ,  Y10T428/31623

公开(公告)号：US3571918A

公开(公告)日：1971-03-23

申请号：US3571918D

申请日：1969-03-28

Applicant: TEXAS INSTRUMENTS INC

Inventor： HABERECHT ROLF R

IPC: C23C16/04 ,  H01L21/00 ,  H01L21/02 ,  H01L23/29 ,  B01J17/00 ,  H01L1/16

CPC classification number: H01L28/40 ,  C23C16/047 ,  H01L21/00 ,  H01L23/29 ,  H01L23/291 ,  H01L2924/0002 ,  Y10S148/026 ,  Y10S148/085 ,  Y10S438/907 ,  H01L2924/00

Abstract: This specification discloses a method of forming an integrated circuit characterized by: 1. Forming on a given substrate, respectively and without the usual complex, multihandling operations; A. A FIRST BLOCK OF SEMICONDUCTOR MATERIAL, B. A SECOND BLOCK OF A REDUCIBLE DIELECTRIC MATERIAL; C. A THIRD BLOCK OF FERRITE, AND D. AN INSULATING FILM COVERING THE SUBSTRATE INTERMEDIATE THE FIRST, SECOND AND THIRD BLOCKS; 2. Forming a semiconductor device in the first block; 3. Forming a resistor in the second block; and 4. Forming a capacitor or an inductor in the third block. An electron beam below a maximum power level is employed to effect the desired depositions and components with the substrate maintained in one reaction chamber. Various vaporous, or gaseous, reactants are flowed past the substrate during the respective operations but external contamination is avoided. Specific materials, reactants, and operations are given.