Thin film metallization processes for microcircuits
    2.
    发明授权
    Thin film metallization processes for microcircuits 失效
    微薄膜薄膜金属化处理

    公开(公告)号:US3634203A

    公开(公告)日:1972-01-11

    申请号:US3634203D

    申请日:1969-07-22

    Abstract: Selective anodic oxidation is employed to pattern thin metallic films in the fabrication of printed circuit boards and integrated microcircuits to provide ''''inlaid'''' metallization geometry and thereby eliminate the need for selective etching of metal films. The total anodic conversion of metallic thin films to the corresponding oxide is demonstrated. Standard photolithographic masking techniques are employed to achieve selective anodic oxidation in the delineation of a single metal film, and also for each successive metallization layer in the fabrication of integrated microcircuits having multilevel, insulated, interconnecting metallization patterns.

    Abstract translation: 在印刷电路板和集成微电路的制造中采用选择性阳极氧化来形成薄金属膜,以提供“嵌入”金属化几何形状,从而消除对金属膜的选择性蚀刻的需要。 证明了金属薄膜对相应氧化物的总阳极转化率。 采用标准光刻掩模技术来实现在单金属膜的描绘中的选择性阳极氧化,以及制造具有多层,绝缘,互连的金属化图案的集成微电路中的每个连续的金属化层。

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