-
公开(公告)号:US11869925B2
公开(公告)日:2024-01-09
申请号:US17163766
申请日:2021-02-01
Applicant: Texas Instruments Incorporated
Inventor: Benjamin Stassen Cook , Daniel Lee Revier
CPC classification number: H01L28/10 , H01L21/56 , H01L23/3107 , H01L23/66 , H01L2223/6677
Abstract: In described examples, a method for fabricating a semiconductor device and a three dimensional structure, and packaging them together, includes: fabricating the integrated circuit on a substrate, immersing the substrate in a liquid encapsulation material, and illuminating the liquid encapsulation material to polymerize the liquid encapsulation material. Immersing the semiconductor device is performed to cover a layer of a platform in the liquid encapsulation material. The platform is a lead frame, a packaging substrate, or the substrate. The illuminating step targets locations of the liquid encapsulation material covering the layer. Illuminated encapsulation material forms solid encapsulation material that is fixedly coupled to contiguous portions of the semiconductor device and of the solid encapsulation material. The immersing and illuminating steps are repeated until a three dimensional structure is formed. The integrated circuit and the three dimensional structure are encapsulated in a single package.
-
公开(公告)号:US20230335355A1
公开(公告)日:2023-10-19
申请号:US18213296
申请日:2023-06-23
Applicant: Texas Instruments Incorporated
CPC classification number: H01H29/28 , H01H11/00 , H01H1/0036 , H01H2029/008
Abstract: A switch that includes a droplet capable of spreading between two conductors to allow them to be coupled when a voltage is applied. The droplet can be enclosed by a cap that is bonded to a wafer that the droplet is placed upon, and include metallic properties. The cap can create a cavity that may be filled by a fluid, gas, or vapor. The cavity can have multiple conductors that extend partially or fully through it. The droplet can couple the conductors when specific voltages, or frequencies are applied to them. At the specific voltage and frequency, the droplet can spread, allowing at least two conductors to be coupled.
-
公开(公告)号:US11728111B2
公开(公告)日:2023-08-15
申请号:US16234243
申请日:2018-12-27
Applicant: Texas Instruments Incorporated
CPC classification number: H01H29/28 , H01H1/0036 , H01H11/00 , H01H2029/008
Abstract: A switch that includes a droplet capable of spreading between two conductors to allow them to be coupled when a voltage is applied. The droplet can be enclosed by a cap that is bonded to a wafer that the droplet is placed upon, and include metallic properties. The cap can create a cavity that may be filled by a fluid, gas, or vapor. The cavity can have multiple conductors that extend partially or fully through it. The droplet can couple the conductors when specific voltages, or frequencies are applied to them. At the specific voltage and frequency the droplet can spread allowing at least two conductors to be coupled.
-
公开(公告)号:US11355414B2
公开(公告)日:2022-06-07
申请号:US16586720
申请日:2019-09-27
Applicant: Texas Instruments Incorporated
Inventor: Benjamin Stassen Cook , Nazila Dadvand , Daniel Lee Revier , Archana Venugopal
IPC: H01L23/373 , H01L23/00 , H01L23/498 , H01L21/48 , H01L21/285
Abstract: In described examples, a circuit (e.g., an integrated circuit) includes a semiconductor substrate that includes a frontside surface and a backside surface. A circuit element is included at the frontside surface. An optional electrical insulator layer can be included adjacent to the backside surface. A distributor layer is included adjacent to the backside surface. In some examples, the distributor layer includes a distributor material that includes a matrix of cohered nanoparticles and metallic particles embedded by the cohered nanoparticles.
-
公开(公告)号:US20210098331A1
公开(公告)日:2021-04-01
申请号:US16586720
申请日:2019-09-27
Applicant: Texas Instruments Incorporated
Inventor: Benjamin Stassen Cook , Nazila Dadvand , Daniel Lee Revier , Archana Venugopal
IPC: H01L23/373 , H01L23/00 , H01L23/498 , H01L21/48 , H01L21/285
Abstract: In described examples, a circuit (e.g., an integrated circuit) includes a semiconductor substrate that includes a frontside surface and a backside surface. A circuit element is included at the frontside surface. An optional electrical insulator layer can be included adjacent to the backside surface. A distributor layer is included adjacent to the backside surface. In some examples, the distributor layer includes a distributor material that includes a matrix of cohered nanoparticles and metallic particles embedded by the cohered nanoparticles.
-
公开(公告)号:US20200212166A1
公开(公告)日:2020-07-02
申请号:US16236106
申请日:2018-12-28
Applicant: Texas Instruments Incorporated
Inventor: Benjamin Stassen Cook , Daniel Lee Revier
Abstract: In described examples, a method for fabricating a semiconductor device and a three dimensional structure, and packaging them together, includes: fabricating the integrated circuit on a substrate, immersing the substrate in a liquid encapsulation material, and illuminating the liquid encapsulation material to polymerize the liquid encapsulation material. Immersing the semiconductor device is performed to cover a layer of a platform in the liquid encapsulation material. The platform is a lead frame, a packaging substrate, or the substrate. The illuminating step targets locations of the liquid encapsulation material covering the layer. Illuminated encapsulation material forms solid encapsulation material that is fixedly coupled to contiguous portions of the semiconductor device and of the solid encapsulation material. The immersing and illuminating steps are repeated until a three dimensional structure is formed. The integrated circuit and the three dimensional structure are encapsulated in a single package.
-
公开(公告)号:US20200211798A1
公开(公告)日:2020-07-02
申请号:US16234243
申请日:2018-12-27
Applicant: Texas Instruments Incorporated
Abstract: A switch that includes a droplet capable of spreading between two conductors to allow them to be coupled when a voltage is applied. The droplet can be enclosed by a cap that is bonded to a wafer that the droplet is placed upon, and include metallic properties. The cap can create a cavity that may be filled by a fluid, gas, or vapor. The cavity can have multiple conductors that extend partially or fully through it. The droplet can couple the conductors when specific voltages, or frequencies are applied to them. At the specific voltage and frequency the droplet can spread allowing at least two conductors to be coupled.
-
公开(公告)号:US10371891B2
公开(公告)日:2019-08-06
申请号:US15800042
申请日:2017-10-31
Applicant: Texas Instruments Incorporated
Inventor: Benjamin Stassen Cook , Daniel Lee Revier
Abstract: An encapsulated integrated circuit package is provided that includes an integrated circuit (IC) die. A radio frequency (RF) circuit on the IC die is operable to send and/or receive an RF signal having a selected frequency. Encapsulation material encapsulates the IC die. A photonic waveguide couples to the RF circuit and extends to an external surface of the encapsulated IC. The photonic waveguide may be formed by a photonic bandgap structure within the encapsulation material. A socket may be included with the encapsulated package that is coupled to an end of the photonic waveguide opposite the RF circuit.
-
公开(公告)号:US20180254230A1
公开(公告)日:2018-09-06
申请号:US15620361
申请日:2017-06-12
Applicant: Texas Instruments Incorporated
Inventor: Daniel Lee Revier , Benjamin Stassen Cook
CPC classification number: H01L23/29 , G06F17/5068 , G06F2217/12 , G06F2217/40 , H01L21/56 , H01L21/67126 , H01L23/3114 , H01L23/552
Abstract: Methods and apparatus providing a graded package for a semiconductor are disclosed. An example apparatus includes a die; and a graded package encapsulating the die, the graded package including a material that is spatially varied from a first location of the graded package to a second location of the graded package.
-
公开(公告)号:US11854933B2
公开(公告)日:2023-12-26
申请号:US17138541
申请日:2020-12-30
Applicant: Texas Instruments Incorporated
Inventor: Benjamin Stassen Cook , Nazila Dadvand , Archana Venugopal , Daniel Lee Revier
IPC: H01L23/373 , H01L23/532 , H01L21/683 , H01L21/3205 , H01L21/78
CPC classification number: H01L23/373 , H01L21/32051 , H01L21/6835 , H01L21/78 , H01L23/53209
Abstract: In described examples, a semiconductor wafer with a thermally conductive surface layer comprises a bulk semiconductor layer having a first surface and a second surface, circuitry on the first surface, a metallic layer attached to the first surface or the second surface, and a graphene layer attached to the metallic layer. The first surface opposes the second surface. The metallic layer comprises a transition metal.
-
-
-
-
-
-
-
-
-