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11.发明申请公开(公告)号：US20170343622A1
公开(公告)日：2017-11-30
申请号：US15169639
申请日：2016-05-31
Applicant: Texas Instruments Incorporated
Inventor： Erika Lynn Mazotti , Dok Won Lee , William David French , Byron J R Shulver , Thomas Dyer Bonifield , Ricky Alan Jackson , Neil Gibson
CPC classification number: G01R33/04 , G01R33/0052
Abstract: An integrated fluxgate device has a magnetic core on a control circuit. The magnetic core has a volume and internal structure sufficient to have low magnetic noise and low non-linearity. A stress control structure is disposed proximate to the magnetic core. An excitation winding, a sense winding and a compensation winding are disposed around the magnetic core. An excitation circuit disposed in the control circuit is coupled to the excitation winding, configured to provide current at high frequency to the excitation winding sufficient to generate a saturating magnetic field in the magnetic core during each cycle at the high frequency. An isolation structure is disposed between the magnetic core and the windings, sufficient to enable operation of the excitation winding and the sense winding at the high frequency at low power.
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公开(公告)号：US20150340338A1
公开(公告)日：2015-11-26
申请号：US14286600
申请日：2014-05-23
Applicant: Texas Instruments Incorporated
Inventor： Dok Won Lee , William D. French , Ann Gabrys
IPC: H01L25/065 , H01L23/00 , H01F27/28 , H01L23/522
Abstract: An inductor conductor design which minimizes the impact of skin effect in the conductors at high frequencies in integrated circuits and the method of manufacture thereof is described herein.
Abstract translation: 这里描述了使集成电路中高频下的导体中的皮肤效应的影响最小化的电感器导体设计及其制造方法。
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公开(公告)号：US11921134B2
公开(公告)日：2024-03-05
申请号：US18295788
申请日：2023-04-04
Applicant: Texas Instruments Incorporated
Inventor： Dok Won Lee
IPC: G01R15/18 , G01R19/00 , H01L23/544 , H01L23/31 , H01L23/498
CPC classification number: G01R15/183 , G01R19/0092 , H01L23/544 , H01L23/3107 , H01L23/49805 , H01L2223/54426 , H01L2223/54486
Abstract: A current-sensing system includes a conductor for carrying a first electrical current generating a first magnetic field. A device, spaced from the conductor by a clearance, includes a semiconductor integrated circuit die in a package. The semiconductor integrated circuit die includes at least one elongated bar of a first ferromagnetic material magnetized by the first magnetic field; a sensor comprising a first coil wrapped around the at least one elongated bar to sense the bar's magnetization; and an electronic driver creating a second electrical current flowing through a second coil wrapped around the at least one elongated bar generating a second magnetic field to compensate the at least one bar's magnetization. The package has a first outer surface free of device terminals. A discrete plate of a second ferromagnetic material is positioned in the clearance and is conformal with the first outer surface of the package.
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公开(公告)号：US20230052689A1
公开(公告)日：2023-02-16
申请号：US17875840
申请日：2022-07-28
Applicant: Texas Instruments Incorporated
Inventor： Lei Ding , Srinath Mathur Ramaswamy , Dok Won Lee , Steven Howard
Abstract: Current sensing techniques. In an example, a current sensing method includes: generating a first magnetic field measurement; generating a second magnetic field measurement; generating a frequency estimate of a current; calculating a root-mean-square (RMS) value of an estimated amplitude of the current; and generating a temperature estimate of an integrated circuit (IC) configured to perform the method. The method also includes generating a first weighting factor and a second weighting factor based on the frequency estimate, the RMS value, and the temperature estimate, the first weighting factor to control amplification of the first magnetic field measurement and the second weighting factor to control amplification of the second magnetic field measurement.
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公开(公告)号：US11237223B2
公开(公告)日：2022-02-01
申请号：US16521053
申请日：2019-07-24
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Jo Bito , Benjamin Stassen Cook , Dok Won Lee , Keith Ryan Green , Ricky Alan Jackson , William David French
Abstract: A structure includes a substrate which includes a surface. The structure also includes a horizontal-type Hall sensor positioned within the substrate and below the surface of the substrate. The structure further includes a patterned magnetic concentrator positioned above the surface of the substrate, and a protective overcoat layer positioned above the magnetic concentrator.
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Patent Agency Ranking
公开(公告)号：US11004929B2
公开(公告)日：2021-05-11
申请号：US16596972
申请日：2019-10-09
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Dok Won Lee , Erika Lynn Mazotti , Mark Robert Visokay , William David French , Ricky Alan Jackson , Wai Lee
IPC: H01L49/02 , G01K7/22 , H01L23/522 , H01L27/07 , G01K7/16
Abstract: Various examples provide an electronic device that includes first and second resistor segments. Each of the resistor segments has a respective doped resistive region formed in a semiconductor substrate. The resistor segments are connected between first and second terminals. The first resistor segment is configured to conduct a current in a first direction, and the second resistor segment is configured to conduct the current in a second different direction. The directions may be orthogonal crystallographic directions of the semiconductor substrate.
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公开(公告)号：US10746611B2
公开(公告)日：2020-08-18
申请号：US15835048
申请日：2017-12-07
Applicant: Texas Instruments Incorporated
Inventor： Dok Won Lee
Abstract: A strain gauge sensor includes a substrate, at least one resistor comprising a magnetoresistive material on the substrate. The magnetoresistive material exhibits a magnetostriction coefficient λ that is greater than or equal to () |2| parts per million (ppm) and an anisotropic magnetoresistance effect with an anisotropic magnetoresistance of greater than or equal to () 2% Δ R/R. The strain gauge sensor consists of a single layer of the magnetoresistive material. At least a first contact to the resistor provides a sensor input and a second contact to the resistor provides a sensor output.
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公开(公告)号：US10374004B2
公开(公告)日：2019-08-06
申请号：US16257410
申请日：2019-01-25
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Dok Won Lee , William David French , Keith Ryan Green
Abstract: Disclosed examples provide wafer-level integration of magnetoresistive sensors and Hall-effect sensors in a single integrated circuit, in which one or more vertical and/or horizontal Hall sensors are formed on or in a substrate along with transistors and other circuitry, and a magnetoresistive sensor circuit is formed in the IC metallization structure.
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公开(公告)号：US10365123B2
公开(公告)日：2019-07-30
申请号：US15656749
申请日：2017-07-21
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Dok Won Lee , Erika Lynn Mazotti , William David French
Abstract: Some embodiments are directed to an anisotropic magneto-resistive (AMR) angle sensor. The sensor comprises a first Wheatstone bridge comprising a first serpentine resistor, a second serpentine resistor, a third serpentine resistor, and a fourth serpentine resistor. The sensor also comprises a second Wheatstone bridge comprising a fifth serpentine resistor, a sixth serpentine resistor, a seventh serpentine resistor, and an eighth serpentine resistor. The serpentine resistors comprise anisotropic magneto-resistive material that changes resistance in response to a change in an applied magnetic field. The sensor also includes a surrounding of anisotropic magneto-resistive material disposed in substantially a same plane as the serpentine resistors, enclosing the serpentine resistors, and electrically isolated from the serpentine resistors. The first Wheatstone bridge, the second Wheatstone bridge, and the surrounding of anisotropic magneto-resistive material are part of a sensor die.
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公开(公告)号：US20190164934A1
公开(公告)日：2019-05-30
申请号：US16264733
申请日：2019-02-01
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Dok Won Lee , William D. French , Ann Gabrys
IPC: H01L25/065 , H01L23/00 , H01F17/00 , H01L23/522
Abstract: An inductor conductor design which minimizes the impact of skin effect in the conductors at high frequencies in integrated circuits and the method of manufacture thereof is described herein.
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