Laser dicing for singulation
    11.
    发明授权

    公开(公告)号:US12198982B2

    公开(公告)日:2025-01-14

    申请号:US17960568

    申请日:2022-10-05

    Abstract: In a described example, a method includes: applying a dicing tape over a metal layer covering a portion of a surface of scribe streets on a device side of a semiconductor wafer that includes semiconductor device dies formed thereon separated from one another by the scribe streets; and placing the semiconductor wafer with the device side facing away from a laser in a stealth dicing machine. A power of a laser beam is adjusted to a first power level. The laser beam is focused through the non-device side of the semiconductor wafer to a first focal depth in the metal layer. The laser beam scans across the scribe streets and ablates the metal layer in the scribe streets. The method continues by singulating the semiconductor device dies using stealth dicing along the scribe streets in the stealth dicing machine.

    Semiconductor die singulation
    16.
    发明授权

    公开(公告)号:US10658240B1

    公开(公告)日:2020-05-19

    申请号:US16291995

    申请日:2019-03-04

    Abstract: In a described example, a method includes: forming stress induced dislocations along scribe lanes between semiconductor dies on a semiconductor wafer using a laser; mounting a first side of the semiconductor wafer on the first side of a first dicing tape; removing a backgrinding tape from the semiconductor wafer; attaching a second dicing tape to a second side of the semiconductor wafer opposite the first side, the second dicing tape adhering to portions of the first dicing tape that are spaced from the semiconductor wafer, forming a dual taped wafer dicing assembly; separating the semiconductor dies by stretching the first dicing tape and stretching the second dicing tape; removing the second dicing tape from the semiconductor dies; and removing the semiconductor dies from the first dicing tape.

    Laser dicing for singulation
    18.
    发明授权

    公开(公告)号:US11469141B2

    公开(公告)日:2022-10-11

    申请号:US16057126

    申请日:2018-08-07

    Abstract: In a described example, a method includes: applying a dicing tape over a metal layer covering a portion of a surface of scribe streets on a device side of a semiconductor wafer that includes semiconductor device dies formed thereon separated from one another by the scribe streets; and placing the semiconductor wafer with the device side facing away from a laser in a stealth dicing machine. A power of a laser beam is adjusted to a first power level. The laser beam is focused through the non-device side of the semiconductor wafer to a first focal depth in the metal layer. The laser beam scans across the scribe streets and ablates the metal layer in the scribe streets. The method continues by singulating the semiconductor device dies using stealth dicing along the scribe streets in the stealth dicing machine.

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