公开(公告)号：US10592333B2

公开(公告)日：2020-03-17

申请号：US15633835

申请日：2017-06-27

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Sai Zhang ,  Yuming Zhu ,  Clive Bittlestone ,  Srinath Ramaswamy

IPC: G06F11/10 ,  G06F3/06 ,  G11C29/52 ,  H03M13/15 ,  H03M13/00

Abstract: A system for error correction code (ECC) management of write-once memory (WOM) codes includes, for example, a controller for selecting between one of a WOM (Write-Once Memory) mode and an ECC (error correction code) mode. A codec is arranged to operate in the selected mode. The codec while operating in the ECC mode is arranged to identify a bit position of at least one bit error in response to ECC parity bits of a first received data word. The codec while operating in the WOM mode is arranged to receive a WOM-encoded word from an addressed location in a WOM device, to receive a second received data word to be encoded and written to the addressed location, and to generate WOM-encoded word for writing to the addressed location in the WOM device. The WOM-encoded word for writing to the addressed location is optionally ECC encoded.

公开(公告)号：US20190004897A1

公开(公告)日：2019-01-03

申请号：US16122575

申请日：2018-09-05

Applicant: Texas Instruments Incorporated

Inventor： Yuming Zhu ,  Manish Goel ,  Sai Zhang

IPC: G06F11/10 ,  G06F11/30 ,  G11C29/44 ,  G11C29/52 ,  G11C29/04 ,  G11C16/30 ,  G11C16/26 ,  G11C29/42 ,  G11C11/22 ,  G11C29/02

Abstract: In described examples, data are stored in a destructive read non-volatile memory (DRNVM). The DRNVM includes an array of DRNVM cells organized as rows of data. The rows of data are subdivided into columns of code word symbols. Each column of code word symbols is encoded to store an error correction code symbol for each column of code word symbols.