Abstract:
In described examples, each node between adjacent capacitive elements of a stack of series-coupled capacitive elements is biased during a reset mode, where each of the capacitive elements includes piezoelectric material. A strain-induced voltage is generated across each of the capacitive elements. Each of the strain-induced voltages is combined to generate a piezoelectric-responsive output signal during a sensing mode at a time different from the time of the reset mode.
Abstract:
An improved differential sensor and corresponding apparatus implementing same. The differential sensor includes a substrate, an amplifier coupled to the substrate, and a plurality of highly-matched piezoelectric capacitors formed onto the substrate. A first set of the highly-matched piezoelectric capacitors are electrically coupled to a non-inverting input of the amplifier, and a second set of the highly-matched piezoelectric capacitors are electrically coupled to an inverting input of the amplifier to form an open loop differential amplifier.
Abstract:
A piezoelectric sensor with: (i) a capacitive element, comprising piezoelectric material; (ii) a pre-conditioning circuit, comprising circuitry for establishing a polarization of the capacitive element in a polarizing mode; and (iii) signal amplification circuitry for providing a piezoelectric-responsive output signal, in response to charge across the capacitive element in a sensing mode.
Abstract:
In an embodiment of the invention, a dual-port positive level sensitive reset preset data retention latch contains a clocked inverter and a dual-port latch. Data is clocked through the clocked inverter when clock signal CKT goes high, CLKZ goes low, preset control signal PRE is low, rest control signal REN is high and retention control signal RET is low. The dual-port latch is configured to receive the output of the clocked inverter, a second data bit D2, the clock signals CKT and CLKZ, the retain control signals RET and RETN, the preset control signal PRE and the control signals SS and SSN. The signals CKT, CLKZ, RET, RETN, PRE, REN, SS and SSN determine whether the output of the clocked inverter or the second data bit D2 is latched in the dual-port latch. Control signals RET and RETN determine when data is stored in the dual-port latch during retention mode.
Abstract:
In an embodiment of the invention, a dual-port negative level sensitive preset data retention latch contains a clocked inverter and a dual-port latch. Data is clocked through the clocked inverter when clock signal CKT goes low, CLKZ goes high, preset control signal PRE is low and retention control signal RET is low. The dual-port latch is configured to receive the output of the clocked inverter, a second data bit D2, the clock signals CKT and CLKZ, the retain control signals RET and RETN, the preset control signal PRE and the control signals SS and SSN. The signals CKT, CLKZ, RET, RETN, PRE, SS and SSN determine whether the output of the clocked inverter or the second data bit D2 is latched in the dual-port latch. Control signals RET and RETN determine when data is stored in the dual-port latch during retention mode.
Abstract:
In an embodiment of the invention, a dual-port positive level sensitive preset data retention latch contains a clocked inverter and a dual-port latch. Data is clocked through the clocked inverter when clock signal CKT goes high, CLKZ goes low, preset control signal PRE is low and retention control signal RET is low. The dual-port latch is configured to receive the output of the clocked inverter, a second data bit D2, the clock signals CKT and CLKZ, the retain control signals RET and RETN, the preset control signal PRE and the control signals SS and SSN. The signals CKT, CLKZ, RET, RETN, PRE, SS and SSN determine whether the output of the clocked inverter or the second data bit D2 is latched in the dual-port latch. Control signals RET and RETN determine when data is stored in the dual-port latch during retention mode.