METHOD AND CIRCUITRY FOR CMOS TRANSCONDUCTOR LINEARIZATION
    11.
    发明申请
    METHOD AND CIRCUITRY FOR CMOS TRANSCONDUCTOR LINEARIZATION 有权
    用于CMOS晶体管线性化的方法和电路

    公开(公告)号:US20160134240A1

    公开(公告)日:2016-05-12

    申请号:US14818882

    申请日:2015-08-05

    Abstract: Third order distortion is reduced in a CMOS transconductor circuit that includes a first N-channel transistor and a first P-channel transistor, gates of the first N-channel transistor and the first P-channel transistor being coupled to receive an input signal. Drains of the first N-channel transistor and first P-channel transistor are coupled to an output conductor. A first degeneration resistor is coupled between a source of the first P-channel transistor and a first supply voltage and a second degeneration resistor is coupled between a source of the first N-channel transistor and a second supply voltage. A first low impedance bypass circuit is coupled between the sources of the first P-channel transistor and the first N-channel transistor. A low impedance bypass circuit re-circulates second order distortion current that is induced by second-order distortion in drain currents of the first P-channel transistor and the first N-channel transistor, through the first N-channel transistor and first P-channel transistor.

    Abstract translation: 在包括第一N沟道晶体管和第一P沟道晶体管的CMOS跨导电路中,三阶失真减小,第一N沟道晶体管和第一P沟道晶体管的栅极被耦合以接收输入信号。 第一N沟道晶体管和第一P沟道晶体管的漏极耦合到输出导体。 第一退化电阻器耦合在第一P沟道晶体管的源极和第一电源电压之间,而第二退化电阻耦合在第一N沟道晶体管的源极和第二电源电压之间。 第一低阻抗旁路电路耦合在第一P沟道晶体管和第一N沟道晶体管的源极之间。 低阻抗旁路电路通过第一N沟道晶体管和第一P沟道重新流过在第一P沟道晶体管和第一N沟道晶体管的漏极电流中由二阶失真引起的二阶失真电流 晶体管。

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