公开(公告)号：US10522596B2

公开(公告)日：2019-12-31

申请号：US15892016

申请日：2018-02-08

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Keiichi Sawa ,  Kazuhisa Matsuda ,  Atsushi Takahashi ,  Takaumi Morita ,  Masayuki Tanaka ,  Shinji Mori ,  Kazuhiro Matsuo ,  Yuta Saito ,  Kenichiro Toratani ,  Hisashi Okuchi

IPC: H01L27/24 ,  G11C13/00 ,  H01L27/108 ,  H01L45/00

Abstract: In one embodiment, a semiconductor storage device includes a first interconnect extending in a first direction, a plurality of second interconnects extending in a second direction different from the first direction, and a plurality of first insulators provided alternately with the second interconnects. The device further includes a resistance change film provided between the first interconnect and at least one of the second interconnects and including a first metal layer or a first semiconductor layer that includes a first face provided on a first interconnect side and a second face provided on a second interconnect side, at least any of the first face and the second face having a curved plane shape.