-
公开(公告)号：US10923487B2
公开(公告)日：2021-02-16
申请号：US16287914
申请日：2019-02-27
发明人： Hiroyuki Yamashita , Shinji Mori , Keiichi Sawa , Kazuhiro Matsuo , Kazuhisa Matsuda , Yuta Saito , Atsushi Takahashi , Masayuki Tanaka
IPC分类号： H01L27/11556 , H01L27/11582
摘要： A semiconductor memory device includes a channel layer and a gate electrode. A first insulating layer is between the semiconductor layer and the gate electrode. A second insulating layer is between the first insulating layer and the gate electrode. A storage region is between the first insulating layer and the second insulating layer. The storage region comprises metal or semiconductor material. A coating layer comprises silicon and nitrogen and surrounds the storage region. The coating layer is between the storage region and the second insulating layer and between the storage region and the first insulating layer.
-
2.发明授权公开(公告)号：US10522596B2
公开(公告)日：2019-12-31
申请号：US15892016
申请日：2018-02-08
发明人： Keiichi Sawa , Kazuhisa Matsuda , Atsushi Takahashi , Takaumi Morita , Masayuki Tanaka , Shinji Mori , Kazuhiro Matsuo , Yuta Saito , Kenichiro Toratani , Hisashi Okuchi
IPC分类号： H01L27/24 , G11C13/00 , H01L27/108 , H01L45/00
摘要： In one embodiment, a semiconductor storage device includes a first interconnect extending in a first direction, a plurality of second interconnects extending in a second direction different from the first direction, and a plurality of first insulators provided alternately with the second interconnects. The device further includes a resistance change film provided between the first interconnect and at least one of the second interconnects and including a first metal layer or a first semiconductor layer that includes a first face provided on a first interconnect side and a second face provided on a second interconnect side, at least any of the first face and the second face having a curved plane shape.
-
公开(公告)号：US09871054B2
公开(公告)日：2018-01-16
申请号：US15257406
申请日：2016-09-06
IPC分类号： H01L27/11582 , H01L23/528 , H01L27/11556 , H01L27/11519 , H01L27/11565
CPC分类号： H01L27/11582 , H01L23/5283 , H01L27/11519 , H01L27/11556 , H01L27/11565 , H01L27/1157 , H01L27/11575
摘要： According to one embodiment, the stacked body includes a plurality of electrode layers stacked with an insulator interposed. The electrode layers have a plurality of terrace portions arranged in a stairstep configuration with a difference in levels. The insulating layer is provided above the terrace portions. The columnar portions extend in a stacking direction of the stacked body through the insulating layer and through the stacked body under the insulating layer. The columnar portions are insulative. The contact portions are provided at side surfaces of the columnar portions on the terrace portions. The contact portions are connected to the terrace portions.
-
公开(公告)号：US20190189423A1
公开(公告)日：2019-06-20
申请号：US16059222
申请日：2018-08-09
发明人： Takaya Ishino , Atsushi Takahashi , Kazunori Zaima
IPC分类号： H01L21/02 , H01L21/027 , H01L21/311 , H01L27/11582
CPC分类号： H01L21/0234 , H01L21/02115 , H01L21/0271 , H01L21/31116 , H01L21/31144 , H01L27/11582
摘要： In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes performing a first process of forming a concave portion in the first film and forming a second film on a surface of the first film that is exposed in the concave portion by using a first gas containing a carbon element and a fluorine element. The method further includes performing a second process of exposing the second film to a second gas containing a hydrogen element or a fluid generated from the second gas.
-
公开(公告)号：US10964716B2
公开(公告)日：2021-03-30
申请号：US16275509
申请日：2019-02-14
发明人： Shinji Mori , Kazuhiro Matsuo , Yuta Saito , Keiichi Sawa , Kazuhisa Matsuda , Atsushi Takahashi , Masayuki Tanaka , Kenichiro Toratani
IPC分类号： H01L27/11582 , H01L21/28 , H01L21/3065 , H01L21/311 , H01L29/423
摘要： A semiconductor device comprises a substrate. A plurality of electrode layers and a plurality of insulating layers are formed in an alternating stack above the substrate. A semiconductor column extends through the plurality of electrode layers and the plurality of insulating layers. The semiconductor column comprises a single-crystal semiconductor material on an outer peripheral surface facing the electrode and insulating layers. First insulating films are formed between the semiconductor column and the electrode layers. The first insulating films are spaced from each other along the column length. Each first insulating film corresponds to one electrode layer. A charge storage layer is between each of the first insulating films and the electrode layers. A second insulating film is between the charge storage layer and each of the electrode layers.
-
公开(公告)号：US10910401B2
公开(公告)日：2021-02-02
申请号：US16559165
申请日：2019-09-03
发明人： Keiichi Sawa , Kazuhiro Matsuo , Kazuhisa Matsuda , Hiroyuki Yamashita , Yuta Saito , Shinji Mori , Masayuki Tanaka , Kenichiro Toratani , Atsushi Takahashi , Shouji Honda
IPC分类号： H01L27/11582 , H01L29/792 , H01L27/11578 , H01L27/11519 , H01L27/1157
摘要： In one embodiment, a semiconductor device includes a substrate, insulating films and first films alternately stacked on the substrate, at least one of the first films including an electrode layer and a charge storage layer provided on a face of the electrode layer via a first insulator, and a semiconductor layer provided on a face of the charge storage layer via a second insulator. The device further includes at least one of a first portion including nitrogen and provided between the first insulator and the charge storage layer with an air gap provided in the first insulator, a second portion including nitrogen, provided between the charge storage layer and the second insulator, and including a portion protruding toward the charge storage layer, and a third portion including nitrogen and provided between the second insulator and the semiconductor layer with an air gap provided in the first insulator.
-
公开(公告)号：US10396280B2
公开(公告)日：2019-08-27
申请号：US15695996
申请日：2017-09-05
发明人： Shinji Mori , Masayuki Tanaka , Kazuhiro Matsuo , Kenichiro Toratani , Keiichi Sawa , Kazuhisa Matsuda , Atsushi Takahashi , Yuta Saito
摘要： A semiconductor memory device includes a plurality of first interconnections extending in a first direction, and a second interconnection extending in a second direction different from the first direction. The device further includes a resistance change film provided between the plurality of first interconnections and the second interconnection, the resistance change film including (a) silicon and a semiconductor layer including one or more elements selected from among oxygen, carbon, nitrogen, phosphorus, boron, and germanium, or (b) a first layer containing the germanium and a second layer containing the silicon.
-
公开(公告)号：US20190027538A1
公开(公告)日：2019-01-24
申请号：US15892016
申请日：2018-02-08
发明人： Keiichi Sawa , Kazuhisa Matsuda , Atsushi Takahashi , Takaumi Morita , Masayuki Tanaka , Shinji Mori , Kazuhiro Matsuo , Yuta Saito , Kenichiro Toratani , Hisashi Okuchi
摘要： In one embodiment, a semiconductor storage device includes a first interconnect extending in a first direction, a plurality of second interconnects extending in a second direction different from the first direction, and a plurality of first insulators provided alternately with the second interconnects. The device further includes a resistance change film provided between the first interconnect and at least one of the second interconnects and including a first metal layer or a first semiconductor layer that includes a first face provided on a first interconnect side and a second face provided on a second interconnect side, at least any of the first face and the second face having a curved plane shape.
-
公开(公告)号：US10096613B2
公开(公告)日：2018-10-09
申请号：US15258559
申请日：2016-09-07
IPC分类号： H01L27/11582 , H01L27/11565 , H01L27/1157 , H01L27/11575
摘要： According to one embodiment, columnar portions extend through an insulating layer and through a stacked body under the insulating layer. The columnar portions are of an insulating material different from the insulating layer. Contact portions include a first contact portion disposed inside a first terrace portion and a second contact portion disposed inside a second terrace portion. The columnar portions including a first columnar portion disposed inside the first terrace portion and a second columnar portion disposed inside the second terrace portion. A shortest distance between the first contact portion and the first columnar portion, and a shortest distance between the second contact portion and the second columnar portion are substantially equal to each other.
-
-
-
-
-
-
-
-
搜索结果
9 条记录 (耗时 0.018 秒)
